Description

The 20051 is a class AB, NPN, common emitter RF power transistor intended for 26 Vdc operation from 1.465 to 1.513 GHz. Rated at 6 watts minimum output power, it may be used for both CW and PEP applications. Ion implantation, nitride surface passivation and gold metallization are used to ensure excellent device reliability. 100 lot traceability is standard.

• 6 Watts, 1.465–1.513 GHz

• Class AB Characteristics

• 35 Collector Efficiency at 4 Watts

• Gold Metallization

• Silicon Nitride Passivated