Description

The 20017 is a class AB, NPN, common emitter RF power transistor intended for 25 Vdc operation across the 860 to 900 MHz cellular radio frequency band. Rated at 150 watts minimum output power, it may be used for both CW and PEP applications. Ion implantation, nitride surface passivation and gold metallization are used to ensure excellent device reliability. 100 lot traceability is standard.

• 150 Watts, 860–900 MHz

• Class AB Characteristics

• 50 Collector Efficiency at 150 Watts

• Gold Metallization

• Silicon Nitride Passivated