Description

The 20038 is a class AB, NPN, common emitter RF power transistor intended for 25 Vdc operation across the 860 to 900 MHz frequency band. Rated at 25 watts minimum output power, it may be used for both CW and PEP applications. It is specifically designed for high efficiency operation at average power levels around 10 watts with high PEP capacity. Ion implantation, nitride surface passivation and gold metallization are used to ensure excellent device reliability. 100 lot traceability is standard.

• 25 Watts, 860–900 MHz

• Class AB Characteristics

• Gold Metallization

• Silicon Nitride Passivated