Description:

N-P-N silicon planar epitaxial transistor intended for use in class-A, AB and B operated high power industrial and military transmitting equipment in the HF and VHF band. The transistor presents excellent performance as a linear amplifier in s.s.b. applications. It is resistance stabilized and is guaranteed to withstand severe load mismatch conditions.

Features:

The transistor has a 1/2 flange envelope with a ceramic cap. All leads are isolated from the flange.