DESCRIPTION

N-P-N silicon planar epitaxial transistor suitable for transmitting applications in class-A, B or C in the u.h.f. and v.h.f. range for a nominal supply voltage of 28 V. The transistor is resistance stabilized and is guaranteed to withstand infinite VSWR at rated output power. High reliability is ensured by a gold sandwich metallization.

The transistor is housed in a 1⁄4 capstan envelope with a ceramic cap. All leads are isolated from the stud.