Description:

N-P-N silicon planar epitaxial transistor intended for use in class-A, B and C operated mobile HF and VHF transmitters with a nominal supply voltage of 13.5 V. The transistor is resistance stabilized and is guaranteed to withstand severe load mismatch conditions with a supply over-voltage to 16.5 V.

Features:

It has a 3/8 flange envelope with a ceramic cap. All leads are isolated from the flange.