6 mm Square Thin Type SMD Light Touch Switches

■ Features ● External dimensions : 6.0 mm6.1 mm, Height 5.0 mm (Including the push plate) ● Steady and low contact resistance (100 mΩ max.) ● Excellent solderability (J-bent-type terminals) ■ Recommended Applications ● Car electronics equipment

6 mm Square Thin Type SMD Light Touch Switches Overstroke travel

■ Features ● External dimensions : 6.5 mm X 6.0 mm, Height 1.8 mm (Excluding the push plate) ● With or without ground terminal, height, operating force ● Overstroke travel ■ Recommended Applications ● Operating switches for other electronic equip

6 mm Square Thin Type SMD Light Touch Switches

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6 mm Square Thin Type SMD Light Touch Switches

文件：101.5 Kbytes Page：4 Pages

6 mm Square Thin Type SMD Light Touch Switches

文件：101.5 Kbytes Page：4 Pages

DUAL TMOS MOSFET 2.5 AMPERES 25 VOLTS

Medium Power Surface Mount Products TMOS Dual P-Channel Field Effect Transistors MiniMOS devices are an advanced series of power MOSFETs which utilize Motorola’s TMOS process. These miniature surface mount MOSFETs feature ultra low RDS(on) and true logic level performance. They are capable of wi

DUAL TMOS POWER FET 2.0 AMPERES 20 VOLTS

Medium Power Surface Mount Products TMOS P-Channel Field Effect Transistors MiniMOS™ devices are an advanced series of power MOSFETs which utilize Motorola’s High Cell Density HDTMOS process. These miniature surface mount MOSFETs feature ultra low RDS(on) and true logic level performance. They a

SINGLE TMOS POWER MOSFET 2.5 AMPERES 20 VOLTS

Medium Power Surface Mount Products TMOS Single P-Channel Fields Effect Transistors MiniMOS™ devices are an advanced series of power MOSFETs which utilize Motorola’s TMOS process. These miniature surface mount MOSFETs feature ultra low RDS(on) and true logic level performance. They are capable o

SINGLE TMOS POWER FET 3.0 AMPERES 20 VOLTS RDS(on) = 0.090 OHM

Medium Power Surface Mount Products TMOS Single P-Channel Field Effect Transistor Micro8™ devices are an advanced series of power MOSFETs which utilize Motorola’s High Cell Density HDTMOS process to achieve lowest possible on–resistance per silicon area. They are capable of withstanding high ene

Power MOSFET 2 Amps, 20 Volts

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