DUAL TMOS POWER FET 2.0 AMPERES 20 VOLTS

Medium Power Surface Mount Products TMOS P-Channel Field Effect Transistors MiniMOS™ devices are an advanced series of power MOSFETs which utilize Motorola’s High Cell Density HDTMOS process. These miniature surface mount MOSFETs feature ultra low RDS(on) and true logic level performance. They a

功率 MOSFET，20V，3.3A，160mΩ，双 P 沟道，SO-8

这些微型表面贴装 MOSFET 具有超低 RDS(on) 和真正逻辑电平性能。它们能够承受雪崩和换相模式下的高能量，漏极-源极二极管具有很短的逆向恢复时间。 这些器件设计用于高能效至关重要的低电压、高速开关应用。典型应用为 DC-DC 转换器以及便携式和电池供电产品中的功率管理，如计算机、打印机、手机和无绳电话。它们还可用于大容量存储产品（例如磁盘驱动器和磁带驱动器）中的低压电机控制。雪崩能量专用于消除设计中的猜测，其中感应负载可进行切换，并提供额外的安全裕度，以抵御意外的电压瞬变。 • Ultra Low RDS(on) Provides Higher Efficiency and Extends Battery Life\n• Logic Level Gate Drive Can Be Driven by Logic ICs\n• Miniature SO-8 Surface Mount Package Saves Board Space\n• Diode Is Characterized for Use In Bridge Circuits\n• Diode Exhibits High Speed, With Soft Recovery\n• IDSS Specifi;

Power MOSFET 2 Amps, 20 Volts P?묬hannel SO??, Dual

文件：100.86 Kbytes Page：8 Pages

Power MOSFET 2 Amps, 20 Volts P?묬hannel SO??, Dual

文件：100.86 Kbytes Page：8 Pages

Power MOSFET 2 Amps, 20 Volts P?묬hannel SO??, Dual

文件：100.86 Kbytes Page：8 Pages

Dual P-Channel 30-V (D-S) MOSFET

文件：1.0556 Mbytes Page：9 Pages

DUAL TMOS MOSFET 2.5 AMPERES 25 VOLTS

Medium Power Surface Mount Products TMOS Dual P-Channel Field Effect Transistors MiniMOS devices are an advanced series of power MOSFETs which utilize Motorola’s TMOS process. These miniature surface mount MOSFETs feature ultra low RDS(on) and true logic level performance. They are capable of wi

SINGLE TMOS POWER MOSFET 2.5 AMPERES 20 VOLTS

Medium Power Surface Mount Products TMOS Single P-Channel Fields Effect Transistors MiniMOS™ devices are an advanced series of power MOSFETs which utilize Motorola’s TMOS process. These miniature surface mount MOSFETs feature ultra low RDS(on) and true logic level performance. They are capable o

SINGLE TMOS POWER FET 3.0 AMPERES 20 VOLTS RDS(on) = 0.090 OHM

Medium Power Surface Mount Products TMOS Single P-Channel Field Effect Transistor Micro8™ devices are an advanced series of power MOSFETs which utilize Motorola’s High Cell Density HDTMOS process to achieve lowest possible on–resistance per silicon area. They are capable of withstanding high ene

Power MOSFET 2 Amps, 20 Volts

文件：106.66 Kbytes Page：8 Pages