DUAL TMOS MOSFET 2.5 AMPERES 25 VOLTS

Medium Power Surface Mount Products TMOS Dual P-Channel Field Effect Transistors MiniMOS devices are an advanced series of power MOSFETs which utilize Motorola’s TMOS process. These miniature surface mount MOSFETs feature ultra low RDS(on) and true logic level performance. They are capable of wi

Power MOSFET 25V 2.5A 250 mOhm Dual P-Channel SO-8

These miniature surface mount MOSFETs feature ultra low RDS(on) and true logic level performance. They are capable of withstanding high energy in the avalanche and commutation modes and the drain-to-source diode has a low reverse recovery time. These devices are designed for use in low voltage, high • Ultra Low RDS(on) Provides Higher Efficiency and Extends Battery Life\n• Logic Level Gate DriveCan Be Driven by Logic ICs\n• Miniature SO-8 Surface Mount PackageSaves Board Space\n• Diode Is Characterized for Use In Bridge Circuits\n• Diode Exhibits High Speed, with Soft Recovery\n• IDSS Specified;

Power MOSFET 2 Amps, 25 Volts P?묬hannel SO??, Dual

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Power MOSFET 2 Amps, 25 Volts P?묬hannel SO??, Dual

文件：99.14 Kbytes Page：7 Pages

Power MOSFET 2 Amps, 25 Volts P?묬hannel SO??, Dual

文件：99.14 Kbytes Page：7 Pages

DUAL TMOS POWER FET 2.0 AMPERES 20 VOLTS

Medium Power Surface Mount Products TMOS P-Channel Field Effect Transistors MiniMOS™ devices are an advanced series of power MOSFETs which utilize Motorola’s High Cell Density HDTMOS process. These miniature surface mount MOSFETs feature ultra low RDS(on) and true logic level performance. They a

SINGLE TMOS POWER MOSFET 2.5 AMPERES 20 VOLTS

Medium Power Surface Mount Products TMOS Single P-Channel Fields Effect Transistors MiniMOS™ devices are an advanced series of power MOSFETs which utilize Motorola’s TMOS process. These miniature surface mount MOSFETs feature ultra low RDS(on) and true logic level performance. They are capable o

SINGLE TMOS POWER FET 3.0 AMPERES 20 VOLTS RDS(on) = 0.090 OHM

Medium Power Surface Mount Products TMOS Single P-Channel Field Effect Transistor Micro8™ devices are an advanced series of power MOSFETs which utilize Motorola’s High Cell Density HDTMOS process to achieve lowest possible on–resistance per silicon area. They are capable of withstanding high ene

Power MOSFET 2 Amps, 20 Volts

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