STEERING DIODE ARRAY

DESCRIPTION The ET724 is an ultra low capacitance steering diode array. This device provides circuit protection for interfaces and wireless bus applications and portable electronics. The ET724 is ideally suited to protect USB data I/O ports against the effects of ESD and EFT. FEATURES • Compati

STEERING DIODE ARRAY

FEATURES ✔ ESD Protection > 40 kilovolts ✔ Low Clamping Voltage ✔ Provides Four(4) Lines of Protection ✔ Low Leakage Current

Ultra Low Capacitance Steering Diode Array

分立 • IEC 61000-4-2 (ESD): Air - 15kV, Contact - 8kV\n• IEC 61000-4-4 (EFT): 40A - 5/50ns\n• IEC 61000-4-5 (Surge): 12A, 8/20µs - Level 1(Line-Gnd) & Level 2(Line-Line)\n• ESD Protection > 25 kilovolts\n• Low Clamping Voltage\n• Provides Four(4) Lines of Protection\n• Low Leakage Current < 100nA\n• Low ;

ULTRA LOW CAPACITANCE STEERING DIODE ARRAY

ultra low capacitance steering diode array

文件：506.85 Kbytes Page：6 Pages

STEERING DIODE ARRAY

FEATURES ✔ ESD Protection > 40 kilovolts ✔ Low Clamping Voltage ✔ Provides Four(4) Lines of Protection ✔ Low Leakage Current

ultra low capacitance steering diode array

文件：506.85 Kbytes Page：6 Pages

ULTRA LOW CAPACITANCE STEERING DIODE ARRAY

文件：509.83 Kbytes Page：6 Pages

Very fast high-voltage soft-recovery rectifiers

DESCRIPTION Rugged glass package, using a high temperature alloyed construction. This package is hermetically sealed and fatigue free as coefficients of expansion of all used parts are matched. The package is designed to be used in an insulating medium such as resin, oil or SF6 gas. FEATU

Integrated Circuit Differential/Cascode Amplifier

Description: The NTE724 is a differential/cascode amplifier in an 8–Lead TO5 type metal can package designed for use in communications and industrial equipment operating at frequencies from dc to 120MHz. Features: • Controlled for Input Offset Voltage, Input Offset Current, and Input Bi

SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR

General Description Silicon VDMOS and LDMOS transistors designed specifically for broadband RF applications. Suitable for Militry Radios, Cellular and Paging Amplifier Base Stations, Broadcast FM/AM, MRI, Laser Driver and others. Polyfet process features low feedback and output capacitances resu

SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR

General Description Silicon VDMOS and LDMOS transistors designed specifically for broadband RF applications. Suitable for Militry Radios, Cellular and Paging Amplifier Base Stations, Broadcast FM/AM, MRI, Laser Driver and others. Polyfet process features low feedback and output capacitances res

PLASTIC SILICON PHOTOTRANSISTOR

文件：155.54 Kbytes Page：2 Pages