PLASTIC SILICON INFRARED PHOTOTRANSISTOR

DESCRIPTION The QSD722/723/724 is a silicon phototransistor encapsulated in an infrared transparent, black TO-18 package. FEATURES • NPN Silicon Phototransistor • Package Type: Plastic TO-18 • Matched Emitter: QED523 • Narrow Reception Angle, 40° • Daylight Filter • Package material and co

封装/外壳：TO-18-2 包装：卷带（TR） 描述：SENSOR PHOTO 880NM TOP VIEW TO18 传感器，变送器 光学传感器 - 光电晶体管

PLASTIC SILICON PHOTOTRANSISTOR

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Very fast high-voltage soft-recovery rectifiers

DESCRIPTION Rugged glass package, using a high temperature alloyed construction. This package is hermetically sealed and fatigue free as coefficients of expansion of all used parts are matched. The package is designed to be used in an insulating medium such as resin, oil or SF6 gas. FEATU

Integrated Circuit Differential/Cascode Amplifier

Description: The NTE724 is a differential/cascode amplifier in an 8–Lead TO5 type metal can package designed for use in communications and industrial equipment operating at frequencies from dc to 120MHz. Features: • Controlled for Input Offset Voltage, Input Offset Current, and Input Bi

SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR

General Description Silicon VDMOS and LDMOS transistors designed specifically for broadband RF applications. Suitable for Militry Radios, Cellular and Paging Amplifier Base Stations, Broadcast FM/AM, MRI, Laser Driver and others. Polyfet process features low feedback and output capacitances resu

SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR

General Description Silicon VDMOS and LDMOS transistors designed specifically for broadband RF applications. Suitable for Militry Radios, Cellular and Paging Amplifier Base Stations, Broadcast FM/AM, MRI, Laser Driver and others. Polyfet process features low feedback and output capacitances res