ESDS31x Data-Line Surge and ESD Protection Diode Array

1 Features • IEC 61000-4-2 ESD protection: – ±30kV Contact Discharge – ±30kV Air Gap Discharge • IEC 61000-4-4 EFT protection: – 80A (5/50ns) • IEC 61000-4-5 surge protection: – 25A (8/20μs) • IO capacitance: – 4.5pF (typical) • DC breakdown voltage: 5.5V (minimum) • Ultra low leakage c

ESDS31x Data-Line Surge and ESD Protection Diode Array

1 Features • IEC 61000-4-2 ESD protection: – ±30kV Contact Discharge – ±30kV Air Gap Discharge • IEC 61000-4-4 EFT protection: – 80A (5/50ns) • IEC 61000-4-5 surge protection: – 25A (8/20μs) • IO capacitance: – 4.5pF (typical) • DC breakdown voltage: 5.5V (minimum) • Ultra low leakage c

ESDS31x Data-Line Surge and ESD Protection Diode Array

1 Features • IEC 61000-4-2 ESD protection: – ±30kV Contact Discharge – ±30kV Air Gap Discharge • IEC 61000-4-4 EFT protection: – 80A (5/50ns) • IEC 61000-4-5 surge protection: – 25A (8/20μs) • IO capacitance: – 4.5pF (typical) • DC breakdown voltage: 5.5V (minimum) • Ultra low leakage c

适用于 USB 和以太网且具有 25A 8/20us 浪涌额定值的双路 4.5pF、3.6V、±30kV ESD 保护二极管

ESDS314、ESDS312 是一种单向 TVS ESD 保护二极管阵列，用于高达 25A (8/20µs) 的以太网、USB 和通用数据线路浪涌保护。ESDS314、ESDS312 器件的额定 ESD 冲击消散值达到了 IEC 61000-4-2（4 级）国际标准中规定的最高水平。\n\n这些器件 每通道 具有 4.5pF IO 电容，因此非常适合用于保护高速接口，如以太网 10/100/1000、USB 2.0 和 GPIO。低动态电阻和低钳位电压确保系统级抗瞬变事件保护。 \n\nESDS314、ESDS312 器件采用符合行业标准的 5 引脚 SOT23 封装。 • IEC 61000-4-2 4 级静电放电 (ESD) 保护 \n• ±30kV 接触放电 \n• ±30kV 气隙放电\n \n• IEC 61000-4-4 瞬态放电 (EFT) 保护 \n• 80A (5/50ns) \n \n• IEC 61000-4-5 浪涌保护 \n• 25A (8/20µs)\n• 低浪涌钳位电压在 25A Ipp 下为 6.5V\n \n• IO 电容： \n• 4.5pF（典型值）\n \n• 直流击穿电压：5.5V（最小值）\n• 超低泄漏电流：5nA（典型值）\n• 支持速率高达 5Gbps 的高速接口\n• 工业温度范围：-40°C 至 +125°;

Data-Line Surge and ESD Protection Diode Array

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Data-Line Surge and ESD Protection Diode Array

文件：1.15345 Mbytes Page：21 Pages

丝印代码：1R4B；ESDS31x Data-Line Surge and ESD Protection Diode Array

1 Features • IEC 61000-4-2 ESD protection: – ±30kV Contact Discharge – ±30kV Air Gap Discharge • IEC 61000-4-4 EFT protection: – 80A (5/50ns) • IEC 61000-4-5 surge protection: – 25A (8/20μs) • IO capacitance: – 4.5pF (typical) • DC breakdown voltage: 5.5V (minimum) • Ultra low leakage c

丝印代码：1R4B；ESDS31x Data-Line Surge and ESD Protection Diode Array

1 Features • IEC 61000-4-2 ESD protection: – ±30kV Contact Discharge – ±30kV Air Gap Discharge • IEC 61000-4-4 EFT protection: – 80A (5/50ns) • IEC 61000-4-5 surge protection: – 25A (8/20μs) • IO capacitance: – 4.5pF (typical) • DC breakdown voltage: 5.5V (minimum) • Ultra low leakage c

丝印代码：1R4B；ESDS31x Data-Line Surge and ESD Protection Diode Array

1 Features • IEC 61000-4-2 ESD protection: – ±30kV Contact Discharge – ±30kV Air Gap Discharge • IEC 61000-4-4 EFT protection: – 80A (5/50ns) • IEC 61000-4-5 surge protection: – 25A (8/20μs) • IO capacitance: – 4.5pF (typical) • DC breakdown voltage: 5.5V (minimum) • Ultra low leakage c

ESDS31x Data-Line Surge and ESD Protection Diode Array

1 Features • IEC 61000-4-2 ESD protection: – ±30kV Contact Discharge – ±30kV Air Gap Discharge • IEC 61000-4-4 EFT protection: – 80A (5/50ns) • IEC 61000-4-5 surge protection: – 25A (8/20μs) • IO capacitance: – 4.5pF (typical) • DC breakdown voltage: 5.5V (minimum) • Ultra low leakage c

丝印代码：1R4B；ESDS31x Data-Line Surge and ESD Protection Diode Array

1 Features • IEC 61000-4-2 ESD protection: – ±30kV Contact Discharge – ±30kV Air Gap Discharge • IEC 61000-4-4 EFT protection: – 80A (5/50ns) • IEC 61000-4-5 surge protection: – 25A (8/20μs) • IO capacitance: – 4.5pF (typical) • DC breakdown voltage: 5.5V (minimum) • Ultra low leakage c

Data-Line Surge and ESD Protection Diode Array

文件：1.15345 Mbytes Page：21 Pages

Data-Line Surge and ESD Protection Diode Array

文件：1.15345 Mbytes Page：21 Pages

封装/外壳：SC-74A，SOT-753 包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 描述：TVS DIODE 3.6VWM 6.5VC SOT23-5 电路保护 TVS - 二极管

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General Description The HV302 and HV312 Hotswap Controllers perform current limiting, circuit breaker protection, over and under voltage detection power management functions during insertion of cards or modules into live backplanes and connectors. Theymaybe used in systems where active contro

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