丝印代码：1R4B；ESDS31x Data-Line Surge and ESD Protection Diode Array

1 Features • IEC 61000-4-2 ESD protection: – ±30kV Contact Discharge – ±30kV Air Gap Discharge • IEC 61000-4-4 EFT protection: – 80A (5/50ns) • IEC 61000-4-5 surge protection: – 25A (8/20μs) • IO capacitance: – 4.5pF (typical) • DC breakdown voltage: 5.5V (minimum) • Ultra low leakage c

丝印代码：1R4B；ESDS31x Data-Line Surge and ESD Protection Diode Array

1 Features • IEC 61000-4-2 ESD protection: – ±30kV Contact Discharge – ±30kV Air Gap Discharge • IEC 61000-4-4 EFT protection: – 80A (5/50ns) • IEC 61000-4-5 surge protection: – 25A (8/20μs) • IO capacitance: – 4.5pF (typical) • DC breakdown voltage: 5.5V (minimum) • Ultra low leakage c

丝印代码：1R4B；ESDS31x Data-Line Surge and ESD Protection Diode Array

1 Features • IEC 61000-4-2 ESD protection: – ±30kV Contact Discharge – ±30kV Air Gap Discharge • IEC 61000-4-4 EFT protection: – 80A (5/50ns) • IEC 61000-4-5 surge protection: – 25A (8/20μs) • IO capacitance: – 4.5pF (typical) • DC breakdown voltage: 5.5V (minimum) • Ultra low leakage c

Data-Line Surge and ESD Protection Diode Array

文件：1.15345 Mbytes Page：21 Pages

封装/外壳：SC-74A，SOT-753 包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 描述：TVS DIODE 3.6VWM 6.5VC SOT23-5 电路保护 TVS - 二极管

ESDS31x Data-Line Surge and ESD Protection Diode Array

1 Features • IEC 61000-4-2 ESD protection: – ±30kV Contact Discharge – ±30kV Air Gap Discharge • IEC 61000-4-4 EFT protection: – 80A (5/50ns) • IEC 61000-4-5 surge protection: – 25A (8/20μs) • IO capacitance: – 4.5pF (typical) • DC breakdown voltage: 5.5V (minimum) • Ultra low leakage c

丝印代码：1R4B；ESDS31x Data-Line Surge and ESD Protection Diode Array

1 Features • IEC 61000-4-2 ESD protection: – ±30kV Contact Discharge – ±30kV Air Gap Discharge • IEC 61000-4-4 EFT protection: – 80A (5/50ns) • IEC 61000-4-5 surge protection: – 25A (8/20μs) • IO capacitance: – 4.5pF (typical) • DC breakdown voltage: 5.5V (minimum) • Ultra low leakage c

Sequencing Hotswap Controllers

General Description The HV302 and HV312 Hotswap Controllers perform current limiting, circuit breaker protection, over and under voltage detection power management functions during insertion of cards or modules into live backplanes and connectors. Theymaybe used in systems where active contro

N-Channel Silicon Junction Field Effect Transistor

Description: The NTE312 is a field effect transistor designed for VHF amplifier and mixer applications. The NTE312 comes in a TO–92 package. Features: • High Power Gain: 10dB Min at 400MHz • High Transconductance: 4000 µmho Min at 400MHz • Low Crss: 1pF Max • High (Yfs) / Ciss

TURBOSWITCHTM ULTRA-FAST HIGH VOLTAGE DIODE

DESCRIPTION TURBOSWITCH 1200V drastically cuts losses in all high voltage operationswhich require extremely fast, soft and noise-free power diodes. Due to their optimized switching performances they also highly decrease power losses in any associated switching IGBT or MOSFET in all ”freewheel mo

TURBOSWITCHTM ULTRA-FAST HIGH VOLTAGE DIODE

DESCRIPTION TURBOSWITCH 1200V drastically cuts losses in all high voltage operationswhich require extremely fast, soft and noise-free power diodes. Due to their optimized switching performances they also highly decrease power losses in any associated switching IGBT or MOSFET in all ”freewheel mo

Operational Amplifiers

文件：200.55 Kbytes Page：6 Pages