温度补偿单极开关型霍尔效应传感器

ES543是基于双极半导体(Bipolar)工艺设计和生产的霍尔效应传感器开关电路。器件内部集成了霍尔效应片、电压调节器、反向电压保护器、信号放大处理电路、施密特触发器和一个开集电极输出驱动三极管。ES543内部补偿特性使其灵敏度随温度升高略有升高，特别适合与常用的低成本磁钢匹配。增强的输出驱动电路可以驱动更大的电流，降低器件内部功耗。ES543可以耐受60V高压冲击。以上特性大大提高了器件的可靠型，非常适合在汽车、工业电器和家电等产品中用作固态电子开关。\n ES543为贴片SOT-89封装，ES443是相同电路的TO-92S直插封装，两种封装都符合RoSH环保标准。\n • 连续磁场检测\n• 快速上电工作时间(2uS)\n• 灵敏度温度补偿\n• 反向电压保护\n• 开集电极输出，最大灌电流：50mA\n• 耐60V高压冲击\n• ESD 5000V\n• 宽工作电压：+3.8V ~ 30V\n• 宽工作温度：-40℃ ~ 150℃;

NPN SILICON POWER TRANSISTORS

NPN SILICON POWER TRANSISTORS ● Designed for Complementary Use with the BD544 Series ● 70 W at 25°C Case Temperature ● 8 A Continuous Collector Current ● 10 A Peak Collector Current ● Customer-Specified Selections Available

NPN SILICON POWER TRANSISTORS

NPN SILICON POWER TRANSISTORS ● Designed for Complementary Use with the BD544 Series ● 70 W at 25°C Case Temperature ● 8 A Continuous Collector Current ● 10 A Peak Collector Current ● Customer-Specified Selections Available

NPN SILICON POWER TRANSISTORS

NPN SILICON POWER TRANSISTORS ● Designed for Complementary Use with the BD544 Series ● 70 W at 25°C Case Temperature ● 8 A Continuous Collector Current ● 10 A Peak Collector Current ● Customer-Specified Selections Available

NPN SILICON POWER TRANSISTORS

NPN SILICON POWER TRANSISTORS ● Designed for Complementary Use with the BD544 Series ● 70 W at 25°C Case Temperature ● 8 A Continuous Collector Current ● 10 A Peak Collector Current ● Customer-Specified Selections Available

UHF power MOS transistor

DESCRIPTION Silicon N-channel enhancement mode vertical D-MOS transistor designed for communications transmitter applications in the UHF frequency range. The transistor is encapsulated in a 6-lead, SOT171 flange envelope, with a ceramic cap. All leads are isolated from the flange. The devices a