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型号 功能描述 生产厂家 企业 LOGO 操作

32Mbit(4M x 8/2M x 16) CMOS 3.0 Volt-only, Boot Sector Flash Memory

文件:583 Kbytes Page:59 Pages

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8Mbit(1M x 8/512K x 16) CMOS 3.0 Volt-only, Boot Sector Flash Memory

文件:678.13 Kbytes Page:50 Pages

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8Mbit(1M x 8/512K x 16) CMOS 3.0 Volt-only, Boot Sector Flash Memory

文件:678.13 Kbytes Page:50 Pages

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4Mbit(512Kx 8/256K x 16) CMOS 3.0 Volt-only, Boot Sector Flash Memory

文件:685.4 Kbytes Page:52 Pages

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32Mbit(4M x 8/2M x 16) CMOS 3.0 Volt-only, Boot Sector Flash Memory

文件:583 Kbytes Page:59 Pages

EXCELSEMI

优先半导体

8Mbit(1M x 8/512K x 16) CMOS 3.0 Volt-only, Boot Sector Flash Memory

文件:678.13 Kbytes Page:50 Pages

EXCELSEMI

优先半导体

8Mbit(1M x 8/512K x 16) CMOS 3.0 Volt-only, Boot Sector Flash Memory

文件:679.83 Kbytes Page:50 Pages

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32Mbit(4M x 8/2M x 16) CMOS 3.0 Volt-only, Boot Sector Flash Memory

文件:745.51 Kbytes Page:58 Pages

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4Mbit(512Kx 8/256K x 16) CMOS 3.0 Volt-only, Boot Sector Flash Memory

文件:679.14 Kbytes Page:51 Pages

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16Mbit(2M x 8/1M x 16) CMOS 3.0 Volt-only, Boot Sector Flash Memory

文件:700.09 Kbytes Page:53 Pages

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8Mbit(1M x 8/512K x 16) CMOS 3.0 Volt-only, Boot Sector Flash Memory

文件:679.83 Kbytes Page:50 Pages

EXCELSEMI

优先半导体

4Mbit(512Kx 8/256K x 16) CMOS 3.0 Volt-only, Boot Sector Flash Memory

文件:685.4 Kbytes Page:52 Pages

EXCELSEMI

优先半导体

32Mbit(4M x 8/2M x 16) CMOS 3.0 Volt-only, Boot Sector Flash Memory

文件:745.51 Kbytes Page:58 Pages

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4 Mbit 512Kb x8 or 256Kb x16, Boot Block Single Supply Flash Memory

Description The M29F400B is a 4 Mbit (512 Kb x8 or 256 Kb x16) non-volatile memory that can be read, erased and reprogrammed. These operations can be performed using a single 5V supply. On power-up the memory defaults to its Read mode where it can be read in the same way as a ROM or EPROM. The M2

STMICROELECTRONICS

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4 Mbit 512Kb x8 or 256Kb x16, Boot Block Single Supply Flash Memory

DESCRIPTION The M29F400 is a non-volatile memory that may be erased electrically at the block or chip level and programmed in-system on a Byte-by-Byte or Word by-Word basis using only a single 5V VCCsupply. For Program and Erase operations the necessary high voltages are generated internally. T

STMICROELECTRONICS

意法半导体

4 Mbit 512Kb x8 or 256Kb x16, Boot Block Single Supply Flash Memory

Description The M29F400B is a 4 Mbit (512 Kb x8 or 256 Kb x16) non-volatile memory that can be read, erased and reprogrammed. These operations can be performed using a single 5V supply. On power-up the memory defaults to its Read mode where it can be read in the same way as a ROM or EPROM. The M2

STMICROELECTRONICS

意法半导体

4 Mbit 512Kb x8 or 256Kb x16, Boot Block Single Supply Flash Memory

Description The M29F400B is a 4 Mbit (512 Kb x8 or 256 Kb x16) non-volatile memory that can be read, erased and reprogrammed. These operations can be performed using a single 5V supply. On power-up the memory defaults to its Read mode where it can be read in the same way as a ROM or EPROM. The M2

STMICROELECTRONICS

意法半导体

4 Mbit 512Kb x8 or 256Kb x16, Boot Block Single Supply Flash Memory

DESCRIPTION The M29F400 is a non-volatile memory that may be erased electrically at the block or chip level and programmed in-system on a Byte-by-Byte or Word by-Word basis using only a single 5V VCCsupply. For Program and Erase operations the necessary high voltages are generated internally. T

STMICROELECTRONICS

意法半导体

ES29F400D产品属性

  • 类型

    描述

  • 型号

    ES29F400D

  • 功能描述

    32Mbit(4M x 8/2M x 16) CMOS 3.0 Volt-only, Boot Sector Flash Memory

更新时间:2026-5-22 17:30:00
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