| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
M29F400B | 4 Mbit 512Kb x8 or 256Kb x16, Boot Block Single Supply Flash Memory DESCRIPTION The M29F400 is a non-volatile memory that may be erased electrically at the block or chip level and programmed in-system on a Byte-by-Byte or Word by-Word basis using only a single 5V VCCsupply. For Program and Erase operations the necessary high voltages are generated internally. T | STMICROELECTRONICS 意法半导体 |   | |
4 Mbit 512Kb x8 or 256Kb x16, Boot Block Single Supply Flash Memory DESCRIPTION The M29F400 is a non-volatile memory that may be erased electrically at the block or chip level and programmed in-system on a Byte-by-Byte or Word by-Word basis using only a single 5V VCCsupply. For Program and Erase operations the necessary high voltages are generated internally. T | STMICROELECTRONICS 意法半导体 | | ||
4 Mbit 512Kb x8 or 256Kb x16, Boot Block Single Supply Flash Memory DESCRIPTION The M29F400 is a non-volatile memory that may be erased electrically at the block or chip level and programmed in-system on a Byte-by-Byte or Word by-Word basis using only a single 5V VCCsupply. For Program and Erase operations the necessary high voltages are generated internally. T | STMICROELECTRONICS 意法半导体 | | ||
4 Mbit 512Kb x8 or 256Kb x16, Boot Block Single Supply Flash Memory DESCRIPTION The M29F400 is a non-volatile memory that may be erased electrically at the block or chip level and programmed in-system on a Byte-by-Byte or Word by-Word basis using only a single 5V VCCsupply. For Program and Erase operations the necessary high voltages are generated internally. T | STMICROELECTRONICS 意法半导体 | | ||
4 Mbit 512Kb x8 or 256Kb x16, Boot Block Single Supply Flash Memory DESCRIPTION The M29F400 is a non-volatile memory that may be erased electrically at the block or chip level and programmed in-system on a Byte-by-Byte or Word by-Word basis using only a single 5V VCCsupply. For Program and Erase operations the necessary high voltages are generated internally. T | STMICROELECTRONICS 意法半导体 | | ||
4 Mbit 512Kb x8 or 256Kb x16, Boot Block Single Supply Flash Memory DESCRIPTION The M29F400 is a non-volatile memory that may be erased electrically at the block or chip level and programmed in-system on a Byte-by-Byte or Word by-Word basis using only a single 5V VCCsupply. For Program and Erase operations the necessary high voltages are generated internally. T | STMICROELECTRONICS 意法半导体 | | ||
4 Mbit 512Kb x8 or 256Kb x16, Boot Block Single Supply Flash Memory DESCRIPTION The M29F400 is a non-volatile memory that may be erased electrically at the block or chip level and programmed in-system on a Byte-by-Byte or Word by-Word basis using only a single 5V VCCsupply. For Program and Erase operations the necessary high voltages are generated internally. T | STMICROELECTRONICS 意法半导体 | | ||
4 Mbit 512Kb x8 or 256Kb x16, Boot Block Single Supply Flash Memory DESCRIPTION The M29F400 is a non-volatile memory that may be erased electrically at the block or chip level and programmed in-system on a Byte-by-Byte or Word by-Word basis using only a single 5V VCCsupply. For Program and Erase operations the necessary high voltages are generated internally. T | STMICROELECTRONICS 意法半导体 | | ||
4 Mbit 512Kb x8 or 256Kb x16, Boot Block Single Supply Flash Memory DESCRIPTION The M29F400 is a non-volatile memory that may be erased electrically at the block or chip level and programmed in-system on a Byte-by-Byte or Word by-Word basis using only a single 5V VCCsupply. For Program and Erase operations the necessary high voltages are generated internally. T | STMICROELECTRONICS 意法半导体 | | ||
4 Mbit 512Kb x8 or 256Kb x16, Boot Block Single Supply Flash Memory DESCRIPTION The M29F400 is a non-volatile memory that may be erased electrically at the block or chip level and programmed in-system on a Byte-by-Byte or Word by-Word basis using only a single 5V VCCsupply. For Program and Erase operations the necessary high voltages are generated internally. T | STMICROELECTRONICS 意法半导体 | | ||
4 Mbit 512Kb x8 or 256Kb x16, Boot Block Single Supply Flash Memory DESCRIPTION The M29F400 is a non-volatile memory that may be erased electrically at the block or chip level and programmed in-system on a Byte-by-Byte or Word by-Word basis using only a single 5V VCCsupply. For Program and Erase operations the necessary high voltages are generated internally. T | STMICROELECTRONICS 意法半导体 | | ||
4 Mbit 512Kb x8 or 256Kb x16, Boot Block Single Supply Flash Memory DESCRIPTION The M29F400 is a non-volatile memory that may be erased electrically at the block or chip level and programmed in-system on a Byte-by-Byte or Word by-Word basis using only a single 5V VCCsupply. For Program and Erase operations the necessary high voltages are generated internally. T | STMICROELECTRONICS 意法半导体 | | ||
4 Mbit 512Kb x8 or 256Kb x16, Boot Block Single Supply Flash Memory DESCRIPTION The M29F400 is a non-volatile memory that may be erased electrically at the block or chip level and programmed in-system on a Byte-by-Byte or Word by-Word basis using only a single 5V VCCsupply. For Program and Erase operations the necessary high voltages are generated internally. T | STMICROELECTRONICS 意法半导体 | | ||
4 Mbit 512Kb x8 or 256Kb x16, Boot Block Single Supply Flash Memory DESCRIPTION The M29F400 is a non-volatile memory that may be erased electrically at the block or chip level and programmed in-system on a Byte-by-Byte or Word by-Word basis using only a single 5V VCCsupply. For Program and Erase operations the necessary high voltages are generated internally. T | STMICROELECTRONICS 意法半导体 | | ||
4 Mbit 512Kb x8 or 256Kb x16, Boot Block Single Supply Flash Memory DESCRIPTION The M29F400 is a non-volatile memory that may be erased electrically at the block or chip level and programmed in-system on a Byte-by-Byte or Word by-Word basis using only a single 5V VCCsupply. For Program and Erase operations the necessary high voltages are generated internally. T | STMICROELECTRONICS 意法半导体 | | ||
4 Mbit 512Kb x8 or 256Kb x16, Boot Block Single Supply Flash Memory DESCRIPTION The M29F400 is a non-volatile memory that may be erased electrically at the block or chip level and programmed in-system on a Byte-by-Byte or Word by-Word basis using only a single 5V VCCsupply. For Program and Erase operations the necessary high voltages are generated internally. T | STMICROELECTRONICS 意法半导体 | | ||
4 Mbit 512Kb x8 or 256Kb x16, Boot Block Single Supply Flash Memory DESCRIPTION The M29F400 is a non-volatile memory that may be erased electrically at the block or chip level and programmed in-system on a Byte-by-Byte or Word by-Word basis using only a single 5V VCCsupply. For Program and Erase operations the necessary high voltages are generated internally. T | STMICROELECTRONICS 意法半导体 | | ||
4 Mbit 512Kb x8 or 256Kb x16, Boot Block Single Supply Flash Memory DESCRIPTION The M29F400 is a non-volatile memory that may be erased electrically at the block or chip level and programmed in-system on a Byte-by-Byte or Word by-Word basis using only a single 5V VCCsupply. For Program and Erase operations the necessary high voltages are generated internally. T | STMICROELECTRONICS 意法半导体 | | ||
4 Mbit 512Kb x8 or 256Kb x16, Boot Block Single Supply Flash Memory DESCRIPTION The M29F400 is a non-volatile memory that may be erased electrically at the block or chip level and programmed in-system on a Byte-by-Byte or Word by-Word basis using only a single 5V VCCsupply. For Program and Erase operations the necessary high voltages are generated internally. T | STMICROELECTRONICS 意法半导体 | | ||
4 Mbit 512Kb x8 or 256Kb x16, Boot Block Single Supply Flash Memory DESCRIPTION The M29F400 is a non-volatile memory that may be erased electrically at the block or chip level and programmed in-system on a Byte-by-Byte or Word by-Word basis using only a single 5V VCCsupply. For Program and Erase operations the necessary high voltages are generated internally. T | STMICROELECTRONICS 意法半导体 | | ||
4 Mbit 512Kb x8 or 256Kb x16, Boot Block Single Supply Flash Memory DESCRIPTION The M29F400 is a non-volatile memory that may be erased electrically at the block or chip level and programmed in-system on a Byte-by-Byte or Word by-Word basis using only a single 5V VCCsupply. For Program and Erase operations the necessary high voltages are generated internally. T | STMICROELECTRONICS 意法半导体 | | ||
4 Mbit 512Kb x8 or 256Kb x16, Boot Block Single Supply Flash Memory DESCRIPTION The M29F400 is a non-volatile memory that may be erased electrically at the block or chip level and programmed in-system on a Byte-by-Byte or Word by-Word basis using only a single 5V VCCsupply. For Program and Erase operations the necessary high voltages are generated internally. T | STMICROELECTRONICS 意法半导体 | | ||
4 Mbit 512Kb x8 or 256Kb x16, Boot Block Single Supply Flash Memory DESCRIPTION The M29F400 is a non-volatile memory that may be erased electrically at the block or chip level and programmed in-system on a Byte-by-Byte or Word by-Word basis using only a single 5V VCCsupply. For Program and Erase operations the necessary high voltages are generated internally. T | STMICROELECTRONICS 意法半导体 | | ||
4 Mbit 512Kb x8 or 256Kb x16, Boot Block Single Supply Flash Memory DESCRIPTION The M29F400 is a non-volatile memory that may be erased electrically at the block or chip level and programmed in-system on a Byte-by-Byte or Word by-Word basis using only a single 5V VCCsupply. For Program and Erase operations the necessary high voltages are generated internally. T | STMICROELECTRONICS 意法半导体 | | ||
4 Mbit 512Kb x8 or 256Kb x16, Boot Block Single Supply Flash Memory DESCRIPTION The M29F400 is a non-volatile memory that may be erased electrically at the block or chip level and programmed in-system on a Byte-by-Byte or Word by-Word basis using only a single 5V VCCsupply. For Program and Erase operations the necessary high voltages are generated internally. T | STMICROELECTRONICS 意法半导体 | | ||
4 Mbit 512Kb x8 or 256Kb x16, Boot Block Single Supply Flash Memory DESCRIPTION The M29F400 is a non-volatile memory that may be erased electrically at the block or chip level and programmed in-system on a Byte-by-Byte or Word by-Word basis using only a single 5V VCCsupply. For Program and Erase operations the necessary high voltages are generated internally. T | STMICROELECTRONICS 意法半导体 | | ||
4 Mbit 512Kb x8 or 256Kb x16, Boot Block Single Supply Flash Memory DESCRIPTION The M29F400 is a non-volatile memory that may be erased electrically at the block or chip level and programmed in-system on a Byte-by-Byte or Word by-Word basis using only a single 5V VCCsupply. For Program and Erase operations the necessary high voltages are generated internally. T | STMICROELECTRONICS 意法半导体 | | ||
4 Mbit 512Kb x8 or 256Kb x16, Boot Block Single Supply Flash Memory DESCRIPTION The M29F400 is a non-volatile memory that may be erased electrically at the block or chip level and programmed in-system on a Byte-by-Byte or Word by-Word basis using only a single 5V VCCsupply. For Program and Erase operations the necessary high voltages are generated internally. T | STMICROELECTRONICS 意法半导体 | | ||
4 Mbit 512Kb x8 or 256Kb x16, Boot Block Single Supply Flash Memory DESCRIPTION The M29F400 is a non-volatile memory that may be erased electrically at the block or chip level and programmed in-system on a Byte-by-Byte or Word by-Word basis using only a single 5V VCCsupply. For Program and Erase operations the necessary high voltages are generated internally. T | STMICROELECTRONICS 意法半导体 | | ||
4 Mbit 512Kb x8 or 256Kb x16, Boot Block Single Supply Flash Memory DESCRIPTION The M29F400 is a non-volatile memory that may be erased electrically at the block or chip level and programmed in-system on a Byte-by-Byte or Word by-Word basis using only a single 5V VCCsupply. For Program and Erase operations the necessary high voltages are generated internally. T | STMICROELECTRONICS 意法半导体 | | ||
4 Mbit 512Kb x8 or 256Kb x16, Boot Block Single Supply Flash Memory DESCRIPTION The M29F400 is a non-volatile memory that may be erased electrically at the block or chip level and programmed in-system on a Byte-by-Byte or Word by-Word basis using only a single 5V VCCsupply. For Program and Erase operations the necessary high voltages are generated internally. T | STMICROELECTRONICS 意法半导体 | | ||
4 Mbit 512Kb x8 or 256Kb x16, Boot Block Single Supply Flash Memory DESCRIPTION The M29F400 is a non-volatile memory that may be erased electrically at the block or chip level and programmed in-system on a Byte-by-Byte or Word by-Word basis using only a single 5V VCCsupply. For Program and Erase operations the necessary high voltages are generated internally. T | STMICROELECTRONICS 意法半导体 | | ||
4 Mbit 512Kb x8 or 256Kb x16, Boot Block Single Supply Flash Memory DESCRIPTION The M29F400 is a non-volatile memory that may be erased electrically at the block or chip level and programmed in-system on a Byte-by-Byte or Word by-Word basis using only a single 5V VCCsupply. For Program and Erase operations the necessary high voltages are generated internally. T | STMICROELECTRONICS 意法半导体 | | ||
4 Mbit 512Kb x8 or 256Kb x16, Boot Block Single Supply Flash Memory DESCRIPTION The M29F400 is a non-volatile memory that may be erased electrically at the block or chip level and programmed in-system on a Byte-by-Byte or Word by-Word basis using only a single 5V VCCsupply. For Program and Erase operations the necessary high voltages are generated internally. T | STMICROELECTRONICS 意法半导体 | | ||
4 Mbit 512Kb x8 or 256Kb x16, Boot Block Single Supply Flash Memory DESCRIPTION The M29F400 is a non-volatile memory that may be erased electrically at the block or chip level and programmed in-system on a Byte-by-Byte or Word by-Word basis using only a single 5V VCCsupply. For Program and Erase operations the necessary high voltages are generated internally. T | STMICROELECTRONICS 意法半导体 | | ||
4 Mbit 512Kb x8 or 256Kb x16, Boot Block Single Supply Flash Memory DESCRIPTION The M29F400 is a non-volatile memory that may be erased electrically at the block or chip level and programmed in-system on a Byte-by-Byte or Word by-Word basis using only a single 5V VCCsupply. For Program and Erase operations the necessary high voltages are generated internally. T | STMICROELECTRONICS 意法半导体 | | ||
4 Mbit 512Kb x8 or 256Kb x16, Boot Block Single Supply Flash Memory DESCRIPTION The M29F400 is a non-volatile memory that may be erased electrically at the block or chip level and programmed in-system on a Byte-by-Byte or Word by-Word basis using only a single 5V VCCsupply. For Program and Erase operations the necessary high voltages are generated internally. T | STMICROELECTRONICS 意法半导体 | | ||
4 Mbit 512Kb x8 or 256Kb x16, Boot Block Single Supply Flash Memory DESCRIPTION The M29F400 is a non-volatile memory that may be erased electrically at the block or chip level and programmed in-system on a Byte-by-Byte or Word by-Word basis using only a single 5V VCCsupply. For Program and Erase operations the necessary high voltages are generated internally. T | STMICROELECTRONICS 意法半导体 | | ||
4 Mbit 512Kb x8 or 256Kb x16, Boot Block Single Supply Flash Memory DESCRIPTION The M29F400 is a non-volatile memory that may be erased electrically at the block or chip level and programmed in-system on a Byte-by-Byte or Word by-Word basis using only a single 5V VCCsupply. For Program and Erase operations the necessary high voltages are generated internally. T | STMICROELECTRONICS 意法半导体 | | ||
4 Mbit 512Kb x8 or 256Kb x16, Boot Block Single Supply Flash Memory DESCRIPTION The M29F400 is a non-volatile memory that may be erased electrically at the block or chip level and programmed in-system on a Byte-by-Byte or Word by-Word basis using only a single 5V VCCsupply. For Program and Erase operations the necessary high voltages are generated internally. T | STMICROELECTRONICS 意法半导体 | | ||
4 Mbit 512Kb x8 or 256Kb x16, Boot Block Single Supply Flash Memory DESCRIPTION The M29F400 is a non-volatile memory that may be erased electrically at the block or chip level and programmed in-system on a Byte-by-Byte or Word by-Word basis using only a single 5V VCCsupply. For Program and Erase operations the necessary high voltages are generated internally. T | STMICROELECTRONICS 意法半导体 | | ||
4 Mbit 512Kb x8 or 256Kb x16, Boot Block Single Supply Flash Memory DESCRIPTION The M29F400 is a non-volatile memory that may be erased electrically at the block or chip level and programmed in-system on a Byte-by-Byte or Word by-Word basis using only a single 5V VCCsupply. For Program and Erase operations the necessary high voltages are generated internally. T | STMICROELECTRONICS 意法半导体 | | ||
4 Mbit 512Kb x8 or 256Kb x16, Boot Block Single Supply Flash Memory DESCRIPTION The M29F400 is a non-volatile memory that may be erased electrically at the block or chip level and programmed in-system on a Byte-by-Byte or Word by-Word basis using only a single 5V VCCsupply. For Program and Erase operations the necessary high voltages are generated internally. T | STMICROELECTRONICS 意法半导体 | | ||
4 Mbit 512Kb x8 or 256Kb x16, Boot Block Single Supply Flash Memory DESCRIPTION The M29F400 is a non-volatile memory that may be erased electrically at the block or chip level and programmed in-system on a Byte-by-Byte or Word by-Word basis using only a single 5V VCCsupply. For Program and Erase operations the necessary high voltages are generated internally. T | STMICROELECTRONICS 意法半导体 | | ||
4 Mbit 512Kb x8 or 256Kb x16, Boot Block Single Supply Flash Memory DESCRIPTION The M29F400 is a non-volatile memory that may be erased electrically at the block or chip level and programmed in-system on a Byte-by-Byte or Word by-Word basis using only a single 5V VCCsupply. For Program and Erase operations the necessary high voltages are generated internally. T | STMICROELECTRONICS 意法半导体 | | ||
4 Mbit 512Kb x8 or 256Kb x16, Boot Block Single Supply Flash Memory DESCRIPTION The M29F400 is a non-volatile memory that may be erased electrically at the block or chip level and programmed in-system on a Byte-by-Byte or Word by-Word basis using only a single 5V VCCsupply. For Program and Erase operations the necessary high voltages are generated internally. T | STMICROELECTRONICS 意法半导体 | | ||
4 Mbit 512Kb x8 or 256Kb x16, Boot Block Single Supply Flash Memory DESCRIPTION The M29F400 is a non-volatile memory that may be erased electrically at the block or chip level and programmed in-system on a Byte-by-Byte or Word by-Word basis using only a single 5V VCCsupply. For Program and Erase operations the necessary high voltages are generated internally. T | STMICROELECTRONICS 意法半导体 | | ||
4 Mbit 512Kb x8 or 256Kb x16, Boot Block Single Supply Flash Memory DESCRIPTION The M29F400 is a non-volatile memory that may be erased electrically at the block or chip level and programmed in-system on a Byte-by-Byte or Word by-Word basis using only a single 5V VCCsupply. For Program and Erase operations the necessary high voltages are generated internally. T | STMICROELECTRONICS 意法半导体 | | ||
4 Mbit 512Kb x8 or 256Kb x16, Boot Block Single Supply Flash Memory DESCRIPTION The M29F400 is a non-volatile memory that may be erased electrically at the block or chip level and programmed in-system on a Byte-by-Byte or Word by-Word basis using only a single 5V VCCsupply. For Program and Erase operations the necessary high voltages are generated internally. T | STMICROELECTRONICS 意法半导体 | | ||
4 Mbit 512Kb x8 or 256Kb x16, Boot Block Single Supply Flash Memory Description The M29F400B is a 4 Mbit (512 Kb x8 or 256 Kb x16) non-volatile memory that can be read, erased and reprogrammed. These operations can be performed using a single 5V supply. On power-up the memory defaults to its Read mode where it can be read in the same way as a ROM or EPROM. The M2 | STMICROELECTRONICS 意法半导体 | | ||
4 Mbit 512Kb x8 or 256Kb x16, Boot Block Single Supply Flash Memory Description The M29F400B is a 4 Mbit (512 Kb x8 or 256 Kb x16) non-volatile memory that can be read, erased and reprogrammed. These operations can be performed using a single 5V supply. On power-up the memory defaults to its Read mode where it can be read in the same way as a ROM or EPROM. The M2 | STMICROELECTRONICS 意法半导体 | | ||
4 Mbit 512Kb x8 or 256Kb x16, Boot Block Single Supply Flash Memory Description The M29F400B is a 4 Mbit (512 Kb x8 or 256 Kb x16) non-volatile memory that can be read, erased and reprogrammed. These operations can be performed using a single 5V supply. On power-up the memory defaults to its Read mode where it can be read in the same way as a ROM or EPROM. The M2 | STMICROELECTRONICS 意法半导体 | | ||
4 Mbit 512Kb x8 or 256Kb x16, Boot Block Single Supply Flash Memory Description The M29F400B is a 4 Mbit (512 Kb x8 or 256 Kb x16) non-volatile memory that can be read, erased and reprogrammed. These operations can be performed using a single 5V supply. On power-up the memory defaults to its Read mode where it can be read in the same way as a ROM or EPROM. The M2 | STMICROELECTRONICS 意法半导体 | | ||
4 Mbit 512Kb x8 or 256Kb x16, Boot Block Single Supply Flash Memory Description The M29F400B is a 4 Mbit (512 Kb x8 or 256 Kb x16) non-volatile memory that can be read, erased and reprogrammed. These operations can be performed using a single 5V supply. On power-up the memory defaults to its Read mode where it can be read in the same way as a ROM or EPROM. The M2 | STMICROELECTRONICS 意法半导体 | | ||
4 Mbit 512Kb x8 or 256Kb x16, Boot Block Single Supply Flash Memory Description The M29F400B is a 4 Mbit (512 Kb x8 or 256 Kb x16) non-volatile memory that can be read, erased and reprogrammed. These operations can be performed using a single 5V supply. On power-up the memory defaults to its Read mode where it can be read in the same way as a ROM or EPROM. The M2 | STMICROELECTRONICS 意法半导体 | | ||
4 Mbit 512Kb x8 or 256Kb x16, Boot Block Single Supply Flash Memory Description The M29F400B is a 4 Mbit (512 Kb x8 or 256 Kb x16) non-volatile memory that can be read, erased and reprogrammed. These operations can be performed using a single 5V supply. On power-up the memory defaults to its Read mode where it can be read in the same way as a ROM or EPROM. The M2 | STMICROELECTRONICS 意法半导体 | | ||
4 Mbit 512Kb x8 or 256Kb x16, Boot Block Single Supply Flash Memory Description The M29F400B is a 4 Mbit (512 Kb x8 or 256 Kb x16) non-volatile memory that can be read, erased and reprogrammed. These operations can be performed using a single 5V supply. On power-up the memory defaults to its Read mode where it can be read in the same way as a ROM or EPROM. The M2 | STMICROELECTRONICS 意法半导体 | | ||
4 Mbit 512Kb x8 or 256Kb x16, Boot Block Single Supply Flash Memory Description The M29F400B is a 4 Mbit (512 Kb x8 or 256 Kb x16) non-volatile memory that can be read, erased and reprogrammed. These operations can be performed using a single 5V supply. On power-up the memory defaults to its Read mode where it can be read in the same way as a ROM or EPROM. The M2 | STMICROELECTRONICS 意法半导体 | | ||
4 Mbit 512Kb x8 or 256Kb x16, Boot Block Single Supply Flash Memory Description The M29F400B is a 4 Mbit (512 Kb x8 or 256 Kb x16) non-volatile memory that can be read, erased and reprogrammed. These operations can be performed using a single 5V supply. On power-up the memory defaults to its Read mode where it can be read in the same way as a ROM or EPROM. The M2 | STMICROELECTRONICS 意法半导体 | | ||
4 Mbit 512Kb x8 or 256Kb x16, Boot Block Single Supply Flash Memory Description The M29F400B is a 4 Mbit (512 Kb x8 or 256 Kb x16) non-volatile memory that can be read, erased and reprogrammed. These operations can be performed using a single 5V supply. On power-up the memory defaults to its Read mode where it can be read in the same way as a ROM or EPROM. The M2 | STMICROELECTRONICS 意法半导体 | |
M29F400B产品属性
- 类型
描述
- 存储器格式：
闪存
- 技术：
FLASH - NOR
- 存储容量：
4Mb （512K x 8，256K x 16）
- 写周期时间 - 字，页：
45ns
- 访问时间：
45ns
- 存储器接口：
并联
- 电压 - 电源：
4.5V ~ 5.5V
- 工作温度：
0°C ~ 70°C（TA）
- 安装类型：
表面贴装
- 封装/外壳：
48-TFSOP（0.724\，18.40mm 宽）
- 供应商器件封装：
48-TSOP
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
ST |
23+ |
SOP44 |
20000 |
全新原装假一赔十 |
|||
ST |
24+ |
9850 |
公司原装现货/随时可以发货 |
||||
ST |
24+ |
TSOP48 |
7850 |
只做原装正品现货或订货假一赔十! |
|||
24+ |
3000 |
公司存货 |
|||||
ST |
23+ |
SOP44 |
9560 |
专业配单保证原装正品假一罚十 |
|||
ST |
23+ |
TSOP |
16900 |
正规渠道,只有原装! |
|||
ST |
2511 |
TSOP |
16900 |
电子元器件采购降本30%!原厂直采,砍掉中间差价 |
|||
ST |
98+ |
TSOP-54 |
267 |
全新 发货1-2天 |
|||
MICRON |
三年内 |
1983 |
只做原装正品 |
||||
ST/意法 |
2025+ |
TSOP |
5000 |
原装进口价格优 请找坤融电子! |
M29F400B规格书下载地址
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- M29F200FT5AM6E2
- M29F200FT55N3F2 TR
- M29F200FT55N3F2
- M29F200FT55N3E2
- M29F200FT55M3F2 TR
- M29F200FT55M3F2
- M29F200FT55M3E2
- M29F200FB5AM6F2
- M29F200FB5AM6E2
- M29F200FB55N6
- M29F200FB55N3F2 TR
- M29F200FB55N3F2
- M29F200FB55N3E2
- M29F200
- M29F160
- M29F100
- M29F040
- M29F010
- M29F002
- M2954
- M2951
- M2950
- M293B1
- M293010
- M29150B
- M29150A
- M2904
- M28W800
- M28W640
- M28ST-D
- M28ST-C
- M28ST-B
M29F400B数据表相关新闻
M28W160ECB70ZB6 ST/Micron
www.hfxcom.com.
2021-11-11M28C64-A256，M28C64C-15M6，M28C64C-20M1，M28C64X-15M1，M28F101-100K1，M28LV16-25M6，M28LV17-25M6，M28LV64C-20M6，M29F102B-70K1，M34116B1，M74HC00，M74ACT74，M74ACT257，M74HC163，M74HC04，M74HC123
M28C64-A256，M28C64C-15M6，M28C64C-20M1，M28C64X-15M1，M28F101-100K1，M28LV16-25M6，M28LV17-25M6，M28LV64C-20M6，M29F102B-70K1，M34116B1，M74HC00，M74ACT74，M74ACT257，M74HC163，M74HC04，M74HC123
2019-12-29M29W128GL70ZS6E顺德利科技正品原装进口稳定的货源优势的价格
深圳市顺德利科技有限公司 0755-82725660 18128853661（微信75056055） QQ：782954141
2019-6-18M28W320FCT70N6E顺德利科技正品原装进口稳定的货源优势的价格
深圳市顺德利科技有限公司 0755-82725660 18128853661（微信75056055） QQ：782954141
2019-6-18M29W128GH70N6E顺德利科技正品原装进口稳定的货源优势的价格
深圳市顺德利科技有限公司 0755-82725660 18128853661（微信75056055） QQ：782954141
2019-6-18M29W128GL70N6E顺德利科技正品原装进口稳定的货源优势的价格
深圳市顺德利科技有限公司 0755-82725660 18128853661（微信75056055） QQ：782954141
2019-6-18
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