位置：首页 > IC中文资料第39页 > M29F400B
| 型号 | 功能描述 | 生产厂家&企业 | LOGO | 操作 |
|---|---|---|---|---|
M29F400B | 4Mbit512Kbx8or256Kbx16,BootBlockSingleSupplyFlashMemory DESCRIPTION TheM29F400isanon-volatilememorythatmaybeerasedelectricallyattheblockorchiplevelandprogrammedin-systemonaByte-by-ByteorWordby-Wordbasisusingonlyasingle5VVCCsupply.ForProgramandEraseoperationsthenecessaryhighvoltagesaregeneratedinternally.T | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体集团 |  |   |
4Mbit512Kbx8or256Kbx16,BootBlockSingleSupplyFlashMemory DESCRIPTION TheM29F400isanon-volatilememorythatmaybeerasedelectricallyattheblockorchiplevelandprogrammedin-systemonaByte-by-ByteorWordby-Wordbasisusingonlyasingle5VVCCsupply.ForProgramandEraseoperationsthenecessaryhighvoltagesaregeneratedinternally.T | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体集团 | | | |
4Mbit512Kbx8or256Kbx16,BootBlockSingleSupplyFlashMemory DESCRIPTION TheM29F400isanon-volatilememorythatmaybeerasedelectricallyattheblockorchiplevelandprogrammedin-systemonaByte-by-ByteorWordby-Wordbasisusingonlyasingle5VVCCsupply.ForProgramandEraseoperationsthenecessaryhighvoltagesaregeneratedinternally.T | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体集团 | | | |
4Mbit512Kbx8or256Kbx16,BootBlockSingleSupplyFlashMemory DESCRIPTION TheM29F400isanon-volatilememorythatmaybeerasedelectricallyattheblockorchiplevelandprogrammedin-systemonaByte-by-ByteorWordby-Wordbasisusingonlyasingle5VVCCsupply.ForProgramandEraseoperationsthenecessaryhighvoltagesaregeneratedinternally.T | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体集团 | | | |
4Mbit512Kbx8or256Kbx16,BootBlockSingleSupplyFlashMemory DESCRIPTION TheM29F400isanon-volatilememorythatmaybeerasedelectricallyattheblockorchiplevelandprogrammedin-systemonaByte-by-ByteorWordby-Wordbasisusingonlyasingle5VVCCsupply.ForProgramandEraseoperationsthenecessaryhighvoltagesaregeneratedinternally.T | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体集团 | | | |
4Mbit512Kbx8or256Kbx16,BootBlockSingleSupplyFlashMemory DESCRIPTION TheM29F400isanon-volatilememorythatmaybeerasedelectricallyattheblockorchiplevelandprogrammedin-systemonaByte-by-ByteorWordby-Wordbasisusingonlyasingle5VVCCsupply.ForProgramandEraseoperationsthenecessaryhighvoltagesaregeneratedinternally.T | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体集团 | | | |
4Mbit512Kbx8or256Kbx16,BootBlockSingleSupplyFlashMemory DESCRIPTION TheM29F400isanon-volatilememorythatmaybeerasedelectricallyattheblockorchiplevelandprogrammedin-systemonaByte-by-ByteorWordby-Wordbasisusingonlyasingle5VVCCsupply.ForProgramandEraseoperationsthenecessaryhighvoltagesaregeneratedinternally.T | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体集团 | | | |
4Mbit512Kbx8or256Kbx16,BootBlockSingleSupplyFlashMemory DESCRIPTION TheM29F400isanon-volatilememorythatmaybeerasedelectricallyattheblockorchiplevelandprogrammedin-systemonaByte-by-ByteorWordby-Wordbasisusingonlyasingle5VVCCsupply.ForProgramandEraseoperationsthenecessaryhighvoltagesaregeneratedinternally.T | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体集团 | | | |
4Mbit512Kbx8or256Kbx16,BootBlockSingleSupplyFlashMemory DESCRIPTION TheM29F400isanon-volatilememorythatmaybeerasedelectricallyattheblockorchiplevelandprogrammedin-systemonaByte-by-ByteorWordby-Wordbasisusingonlyasingle5VVCCsupply.ForProgramandEraseoperationsthenecessaryhighvoltagesaregeneratedinternally.T | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体集团 | | | |
4Mbit512Kbx8or256Kbx16,BootBlockSingleSupplyFlashMemory DESCRIPTION TheM29F400isanon-volatilememorythatmaybeerasedelectricallyattheblockorchiplevelandprogrammedin-systemonaByte-by-ByteorWordby-Wordbasisusingonlyasingle5VVCCsupply.ForProgramandEraseoperationsthenecessaryhighvoltagesaregeneratedinternally.T | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体集团 | | | |
4Mbit512Kbx8or256Kbx16,BootBlockSingleSupplyFlashMemory DESCRIPTION TheM29F400isanon-volatilememorythatmaybeerasedelectricallyattheblockorchiplevelandprogrammedin-systemonaByte-by-ByteorWordby-Wordbasisusingonlyasingle5VVCCsupply.ForProgramandEraseoperationsthenecessaryhighvoltagesaregeneratedinternally.T | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体集团 | | | |
4Mbit512Kbx8or256Kbx16,BootBlockSingleSupplyFlashMemory DESCRIPTION TheM29F400isanon-volatilememorythatmaybeerasedelectricallyattheblockorchiplevelandprogrammedin-systemonaByte-by-ByteorWordby-Wordbasisusingonlyasingle5VVCCsupply.ForProgramandEraseoperationsthenecessaryhighvoltagesaregeneratedinternally.T | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体集团 | | | |
4Mbit512Kbx8or256Kbx16,BootBlockSingleSupplyFlashMemory DESCRIPTION TheM29F400isanon-volatilememorythatmaybeerasedelectricallyattheblockorchiplevelandprogrammedin-systemonaByte-by-ByteorWordby-Wordbasisusingonlyasingle5VVCCsupply.ForProgramandEraseoperationsthenecessaryhighvoltagesaregeneratedinternally.T | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体集团 | | | |
4Mbit512Kbx8or256Kbx16,BootBlockSingleSupplyFlashMemory DESCRIPTION TheM29F400isanon-volatilememorythatmaybeerasedelectricallyattheblockorchiplevelandprogrammedin-systemonaByte-by-ByteorWordby-Wordbasisusingonlyasingle5VVCCsupply.ForProgramandEraseoperationsthenecessaryhighvoltagesaregeneratedinternally.T | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体集团 | | | |
4Mbit512Kbx8or256Kbx16,BootBlockSingleSupplyFlashMemory DESCRIPTION TheM29F400isanon-volatilememorythatmaybeerasedelectricallyattheblockorchiplevelandprogrammedin-systemonaByte-by-ByteorWordby-Wordbasisusingonlyasingle5VVCCsupply.ForProgramandEraseoperationsthenecessaryhighvoltagesaregeneratedinternally.T | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体集团 | | | |
4Mbit512Kbx8or256Kbx16,BootBlockSingleSupplyFlashMemory DESCRIPTION TheM29F400isanon-volatilememorythatmaybeerasedelectricallyattheblockorchiplevelandprogrammedin-systemonaByte-by-ByteorWordby-Wordbasisusingonlyasingle5VVCCsupply.ForProgramandEraseoperationsthenecessaryhighvoltagesaregeneratedinternally.T | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体集团 | | | |
4Mbit512Kbx8or256Kbx16,BootBlockSingleSupplyFlashMemory DESCRIPTION TheM29F400isanon-volatilememorythatmaybeerasedelectricallyattheblockorchiplevelandprogrammedin-systemonaByte-by-ByteorWordby-Wordbasisusingonlyasingle5VVCCsupply.ForProgramandEraseoperationsthenecessaryhighvoltagesaregeneratedinternally.T | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体集团 | | | |
4Mbit512Kbx8or256Kbx16,BootBlockSingleSupplyFlashMemory DESCRIPTION TheM29F400isanon-volatilememorythatmaybeerasedelectricallyattheblockorchiplevelandprogrammedin-systemonaByte-by-ByteorWordby-Wordbasisusingonlyasingle5VVCCsupply.ForProgramandEraseoperationsthenecessaryhighvoltagesaregeneratedinternally.T | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体集团 | | | |
4Mbit512Kbx8or256Kbx16,BootBlockSingleSupplyFlashMemory DESCRIPTION TheM29F400isanon-volatilememorythatmaybeerasedelectricallyattheblockorchiplevelandprogrammedin-systemonaByte-by-ByteorWordby-Wordbasisusingonlyasingle5VVCCsupply.ForProgramandEraseoperationsthenecessaryhighvoltagesaregeneratedinternally.T | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体集团 | | | |
4Mbit512Kbx8or256Kbx16,BootBlockSingleSupplyFlashMemory DESCRIPTION TheM29F400isanon-volatilememorythatmaybeerasedelectricallyattheblockorchiplevelandprogrammedin-systemonaByte-by-ByteorWordby-Wordbasisusingonlyasingle5VVCCsupply.ForProgramandEraseoperationsthenecessaryhighvoltagesaregeneratedinternally.T | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体集团 | | | |
4Mbit512Kbx8or256Kbx16,BootBlockSingleSupplyFlashMemory DESCRIPTION TheM29F400isanon-volatilememorythatmaybeerasedelectricallyattheblockorchiplevelandprogrammedin-systemonaByte-by-ByteorWordby-Wordbasisusingonlyasingle5VVCCsupply.ForProgramandEraseoperationsthenecessaryhighvoltagesaregeneratedinternally.T | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体集团 | | | |
4Mbit512Kbx8or256Kbx16,BootBlockSingleSupplyFlashMemory DESCRIPTION TheM29F400isanon-volatilememorythatmaybeerasedelectricallyattheblockorchiplevelandprogrammedin-systemonaByte-by-ByteorWordby-Wordbasisusingonlyasingle5VVCCsupply.ForProgramandEraseoperationsthenecessaryhighvoltagesaregeneratedinternally.T | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体集团 | | | |
4Mbit512Kbx8or256Kbx16,BootBlockSingleSupplyFlashMemory DESCRIPTION TheM29F400isanon-volatilememorythatmaybeerasedelectricallyattheblockorchiplevelandprogrammedin-systemonaByte-by-ByteorWordby-Wordbasisusingonlyasingle5VVCCsupply.ForProgramandEraseoperationsthenecessaryhighvoltagesaregeneratedinternally.T | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体集团 | | | |
4Mbit512Kbx8or256Kbx16,BootBlockSingleSupplyFlashMemory DESCRIPTION TheM29F400isanon-volatilememorythatmaybeerasedelectricallyattheblockorchiplevelandprogrammedin-systemonaByte-by-ByteorWordby-Wordbasisusingonlyasingle5VVCCsupply.ForProgramandEraseoperationsthenecessaryhighvoltagesaregeneratedinternally.T | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体集团 | | | |
4Mbit512Kbx8or256Kbx16,BootBlockSingleSupplyFlashMemory DESCRIPTION TheM29F400isanon-volatilememorythatmaybeerasedelectricallyattheblockorchiplevelandprogrammedin-systemonaByte-by-ByteorWordby-Wordbasisusingonlyasingle5VVCCsupply.ForProgramandEraseoperationsthenecessaryhighvoltagesaregeneratedinternally.T | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体集团 | | | |
4Mbit512Kbx8or256Kbx16,BootBlockSingleSupplyFlashMemory DESCRIPTION TheM29F400isanon-volatilememorythatmaybeerasedelectricallyattheblockorchiplevelandprogrammedin-systemonaByte-by-ByteorWordby-Wordbasisusingonlyasingle5VVCCsupply.ForProgramandEraseoperationsthenecessaryhighvoltagesaregeneratedinternally.T | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体集团 | | | |
4Mbit512Kbx8or256Kbx16,BootBlockSingleSupplyFlashMemory DESCRIPTION TheM29F400isanon-volatilememorythatmaybeerasedelectricallyattheblockorchiplevelandprogrammedin-systemonaByte-by-ByteorWordby-Wordbasisusingonlyasingle5VVCCsupply.ForProgramandEraseoperationsthenecessaryhighvoltagesaregeneratedinternally.T | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体集团 | | | |
4Mbit512Kbx8or256Kbx16,BootBlockSingleSupplyFlashMemory DESCRIPTION TheM29F400isanon-volatilememorythatmaybeerasedelectricallyattheblockorchiplevelandprogrammedin-systemonaByte-by-ByteorWordby-Wordbasisusingonlyasingle5VVCCsupply.ForProgramandEraseoperationsthenecessaryhighvoltagesaregeneratedinternally.T | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体集团 | | | |
4Mbit512Kbx8or256Kbx16,BootBlockSingleSupplyFlashMemory DESCRIPTION TheM29F400isanon-volatilememorythatmaybeerasedelectricallyattheblockorchiplevelandprogrammedin-systemonaByte-by-ByteorWordby-Wordbasisusingonlyasingle5VVCCsupply.ForProgramandEraseoperationsthenecessaryhighvoltagesaregeneratedinternally.T | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体集团 | | | |
4Mbit512Kbx8or256Kbx16,BootBlockSingleSupplyFlashMemory DESCRIPTION TheM29F400isanon-volatilememorythatmaybeerasedelectricallyattheblockorchiplevelandprogrammedin-systemonaByte-by-ByteorWordby-Wordbasisusingonlyasingle5VVCCsupply.ForProgramandEraseoperationsthenecessaryhighvoltagesaregeneratedinternally.T | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体集团 | | | |
4Mbit512Kbx8or256Kbx16,BootBlockSingleSupplyFlashMemory DESCRIPTION TheM29F400isanon-volatilememorythatmaybeerasedelectricallyattheblockorchiplevelandprogrammedin-systemonaByte-by-ByteorWordby-Wordbasisusingonlyasingle5VVCCsupply.ForProgramandEraseoperationsthenecessaryhighvoltagesaregeneratedinternally.T | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体集团 | | | |
4Mbit512Kbx8or256Kbx16,BootBlockSingleSupplyFlashMemory DESCRIPTION TheM29F400isanon-volatilememorythatmaybeerasedelectricallyattheblockorchiplevelandprogrammedin-systemonaByte-by-ByteorWordby-Wordbasisusingonlyasingle5VVCCsupply.ForProgramandEraseoperationsthenecessaryhighvoltagesaregeneratedinternally.T | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体集团 | | | |
4Mbit512Kbx8or256Kbx16,BootBlockSingleSupplyFlashMemory DESCRIPTION TheM29F400isanon-volatilememorythatmaybeerasedelectricallyattheblockorchiplevelandprogrammedin-systemonaByte-by-ByteorWordby-Wordbasisusingonlyasingle5VVCCsupply.ForProgramandEraseoperationsthenecessaryhighvoltagesaregeneratedinternally.T | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体集团 | | | |
4Mbit512Kbx8or256Kbx16,BootBlockSingleSupplyFlashMemory DESCRIPTION TheM29F400isanon-volatilememorythatmaybeerasedelectricallyattheblockorchiplevelandprogrammedin-systemonaByte-by-ByteorWordby-Wordbasisusingonlyasingle5VVCCsupply.ForProgramandEraseoperationsthenecessaryhighvoltagesaregeneratedinternally.T | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体集团 | | | |
4Mbit512Kbx8or256Kbx16,BootBlockSingleSupplyFlashMemory DESCRIPTION TheM29F400isanon-volatilememorythatmaybeerasedelectricallyattheblockorchiplevelandprogrammedin-systemonaByte-by-ByteorWordby-Wordbasisusingonlyasingle5VVCCsupply.ForProgramandEraseoperationsthenecessaryhighvoltagesaregeneratedinternally.T | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体集团 | | | |
4Mbit512Kbx8or256Kbx16,BootBlockSingleSupplyFlashMemory DESCRIPTION TheM29F400isanon-volatilememorythatmaybeerasedelectricallyattheblockorchiplevelandprogrammedin-systemonaByte-by-ByteorWordby-Wordbasisusingonlyasingle5VVCCsupply.ForProgramandEraseoperationsthenecessaryhighvoltagesaregeneratedinternally.T | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体集团 | | | |
4Mbit512Kbx8or256Kbx16,BootBlockSingleSupplyFlashMemory DESCRIPTION TheM29F400isanon-volatilememorythatmaybeerasedelectricallyattheblockorchiplevelandprogrammedin-systemonaByte-by-ByteorWordby-Wordbasisusingonlyasingle5VVCCsupply.ForProgramandEraseoperationsthenecessaryhighvoltagesaregeneratedinternally.T | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体集团 | | | |
4Mbit512Kbx8or256Kbx16,BootBlockSingleSupplyFlashMemory DESCRIPTION TheM29F400isanon-volatilememorythatmaybeerasedelectricallyattheblockorchiplevelandprogrammedin-systemonaByte-by-ByteorWordby-Wordbasisusingonlyasingle5VVCCsupply.ForProgramandEraseoperationsthenecessaryhighvoltagesaregeneratedinternally.T | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体集团 | | | |
4Mbit512Kbx8or256Kbx16,BootBlockSingleSupplyFlashMemory DESCRIPTION TheM29F400isanon-volatilememorythatmaybeerasedelectricallyattheblockorchiplevelandprogrammedin-systemonaByte-by-ByteorWordby-Wordbasisusingonlyasingle5VVCCsupply.ForProgramandEraseoperationsthenecessaryhighvoltagesaregeneratedinternally.T | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体集团 | | | |
4Mbit512Kbx8or256Kbx16,BootBlockSingleSupplyFlashMemory DESCRIPTION TheM29F400isanon-volatilememorythatmaybeerasedelectricallyattheblockorchiplevelandprogrammedin-systemonaByte-by-ByteorWordby-Wordbasisusingonlyasingle5VVCCsupply.ForProgramandEraseoperationsthenecessaryhighvoltagesaregeneratedinternally.T | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体集团 | | | |
4Mbit512Kbx8or256Kbx16,BootBlockSingleSupplyFlashMemory DESCRIPTION TheM29F400isanon-volatilememorythatmaybeerasedelectricallyattheblockorchiplevelandprogrammedin-systemonaByte-by-ByteorWordby-Wordbasisusingonlyasingle5VVCCsupply.ForProgramandEraseoperationsthenecessaryhighvoltagesaregeneratedinternally.T | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体集团 | | | |
4Mbit512Kbx8or256Kbx16,BootBlockSingleSupplyFlashMemory DESCRIPTION TheM29F400isanon-volatilememorythatmaybeerasedelectricallyattheblockorchiplevelandprogrammedin-systemonaByte-by-ByteorWordby-Wordbasisusingonlyasingle5VVCCsupply.ForProgramandEraseoperationsthenecessaryhighvoltagesaregeneratedinternally.T | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体集团 | | | |
4Mbit512Kbx8or256Kbx16,BootBlockSingleSupplyFlashMemory DESCRIPTION TheM29F400isanon-volatilememorythatmaybeerasedelectricallyattheblockorchiplevelandprogrammedin-systemonaByte-by-ByteorWordby-Wordbasisusingonlyasingle5VVCCsupply.ForProgramandEraseoperationsthenecessaryhighvoltagesaregeneratedinternally.T | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体集团 | | | |
4Mbit512Kbx8or256Kbx16,BootBlockSingleSupplyFlashMemory DESCRIPTION TheM29F400isanon-volatilememorythatmaybeerasedelectricallyattheblockorchiplevelandprogrammedin-systemonaByte-by-ByteorWordby-Wordbasisusingonlyasingle5VVCCsupply.ForProgramandEraseoperationsthenecessaryhighvoltagesaregeneratedinternally.T | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体集团 | | | |
4Mbit512Kbx8or256Kbx16,BootBlockSingleSupplyFlashMemory DESCRIPTION TheM29F400isanon-volatilememorythatmaybeerasedelectricallyattheblockorchiplevelandprogrammedin-systemonaByte-by-ByteorWordby-Wordbasisusingonlyasingle5VVCCsupply.ForProgramandEraseoperationsthenecessaryhighvoltagesaregeneratedinternally.T | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体集团 | | | |
4Mbit512Kbx8or256Kbx16,BootBlockSingleSupplyFlashMemory DESCRIPTION TheM29F400isanon-volatilememorythatmaybeerasedelectricallyattheblockorchiplevelandprogrammedin-systemonaByte-by-ByteorWordby-Wordbasisusingonlyasingle5VVCCsupply.ForProgramandEraseoperationsthenecessaryhighvoltagesaregeneratedinternally.T | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体集团 | | | |
4Mbit512Kbx8or256Kbx16,BootBlockSingleSupplyFlashMemory DESCRIPTION TheM29F400isanon-volatilememorythatmaybeerasedelectricallyattheblockorchiplevelandprogrammedin-systemonaByte-by-ByteorWordby-Wordbasisusingonlyasingle5VVCCsupply.ForProgramandEraseoperationsthenecessaryhighvoltagesaregeneratedinternally.T | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体集团 | | | |
4Mbit512Kbx8or256Kbx16,BootBlockSingleSupplyFlashMemory DESCRIPTION TheM29F400isanon-volatilememorythatmaybeerasedelectricallyattheblockorchiplevelandprogrammedin-systemonaByte-by-ByteorWordby-Wordbasisusingonlyasingle5VVCCsupply.ForProgramandEraseoperationsthenecessaryhighvoltagesaregeneratedinternally.T | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体集团 | | | |
4Mbit512Kbx8or256Kbx16,BootBlockSingleSupplyFlashMemory DESCRIPTION TheM29F400isanon-volatilememorythatmaybeerasedelectricallyattheblockorchiplevelandprogrammedin-systemonaByte-by-ByteorWordby-Wordbasisusingonlyasingle5VVCCsupply.ForProgramandEraseoperationsthenecessaryhighvoltagesaregeneratedinternally.T | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体集团 | | | |
4Mbit512Kbx8or256Kbx16,BootBlockSingleSupplyFlashMemory Description TheM29F400Bisa4Mbit(512Kbx8or256Kbx16)non-volatilememorythatcanberead,erasedandreprogrammed.Theseoperationscanbeperformedusingasingle5Vsupply.Onpower-upthememorydefaultstoitsReadmodewhereitcanbereadinthesamewayasaROMorEPROM.TheM2 | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体集团 | | | |
4Mbit512Kbx8or256Kbx16,BootBlockSingleSupplyFlashMemory Description TheM29F400Bisa4Mbit(512Kbx8or256Kbx16)non-volatilememorythatcanberead,erasedandreprogrammed.Theseoperationscanbeperformedusingasingle5Vsupply.Onpower-upthememorydefaultstoitsReadmodewhereitcanbereadinthesamewayasaROMorEPROM.TheM2 | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体集团 | | | |
4Mbit512Kbx8or256Kbx16,BootBlockSingleSupplyFlashMemory Description TheM29F400Bisa4Mbit(512Kbx8or256Kbx16)non-volatilememorythatcanberead,erasedandreprogrammed.Theseoperationscanbeperformedusingasingle5Vsupply.Onpower-upthememorydefaultstoitsReadmodewhereitcanbereadinthesamewayasaROMorEPROM.TheM2 | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体集团 | | | |
4Mbit512Kbx8or256Kbx16,BootBlockSingleSupplyFlashMemory Description TheM29F400Bisa4Mbit(512Kbx8or256Kbx16)non-volatilememorythatcanberead,erasedandreprogrammed.Theseoperationscanbeperformedusingasingle5Vsupply.Onpower-upthememorydefaultstoitsReadmodewhereitcanbereadinthesamewayasaROMorEPROM.TheM2 | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体集团 | | | |
4Mbit512Kbx8or256Kbx16,BootBlockSingleSupplyFlashMemory Description TheM29F400Bisa4Mbit(512Kbx8or256Kbx16)non-volatilememorythatcanberead,erasedandreprogrammed.Theseoperationscanbeperformedusingasingle5Vsupply.Onpower-upthememorydefaultstoitsReadmodewhereitcanbereadinthesamewayasaROMorEPROM.TheM2 | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体集团 | | | |
4Mbit512Kbx8or256Kbx16,BootBlockSingleSupplyFlashMemory Description TheM29F400Bisa4Mbit(512Kbx8or256Kbx16)non-volatilememorythatcanberead,erasedandreprogrammed.Theseoperationscanbeperformedusingasingle5Vsupply.Onpower-upthememorydefaultstoitsReadmodewhereitcanbereadinthesamewayasaROMorEPROM.TheM2 | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体集团 | | | |
4Mbit512Kbx8or256Kbx16,BootBlockSingleSupplyFlashMemory Description TheM29F400Bisa4Mbit(512Kbx8or256Kbx16)non-volatilememorythatcanberead,erasedandreprogrammed.Theseoperationscanbeperformedusingasingle5Vsupply.Onpower-upthememorydefaultstoitsReadmodewhereitcanbereadinthesamewayasaROMorEPROM.TheM2 | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体集团 | | | |
4Mbit512Kbx8or256Kbx16,BootBlockSingleSupplyFlashMemory Description TheM29F400Bisa4Mbit(512Kbx8or256Kbx16)non-volatilememorythatcanberead,erasedandreprogrammed.Theseoperationscanbeperformedusingasingle5Vsupply.Onpower-upthememorydefaultstoitsReadmodewhereitcanbereadinthesamewayasaROMorEPROM.TheM2 | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体集团 | | | |
4Mbit512Kbx8or256Kbx16,BootBlockSingleSupplyFlashMemory Description TheM29F400Bisa4Mbit(512Kbx8or256Kbx16)non-volatilememorythatcanberead,erasedandreprogrammed.Theseoperationscanbeperformedusingasingle5Vsupply.Onpower-upthememorydefaultstoitsReadmodewhereitcanbereadinthesamewayasaROMorEPROM.TheM2 | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体集团 | | | |
4Mbit512Kbx8or256Kbx16,BootBlockSingleSupplyFlashMemory Description TheM29F400Bisa4Mbit(512Kbx8or256Kbx16)non-volatilememorythatcanberead,erasedandreprogrammed.Theseoperationscanbeperformedusingasingle5Vsupply.Onpower-upthememorydefaultstoitsReadmodewhereitcanbereadinthesamewayasaROMorEPROM.TheM2 | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体集团 | | | |
4Mbit512Kbx8or256Kbx16,BootBlockSingleSupplyFlashMemory Description TheM29F400Bisa4Mbit(512Kbx8or256Kbx16)non-volatilememorythatcanberead,erasedandreprogrammed.Theseoperationscanbeperformedusingasingle5Vsupply.Onpower-upthememorydefaultstoitsReadmodewhereitcanbereadinthesamewayasaROMorEPROM.TheM2 | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体集团 | | |
M29F400B产品属性
- 类型
描述
- 型号
M29F400B
- 功能描述
闪存 512Kx8 or 256Kx16 90
- RoHS
否
- 制造商
ON Semiconductor
- 数据总线宽度
1 bit
- 存储类型
Flash
- 存储容量
2 MB
- 结构
256 K x 8
- 接口类型
SPI
- 电源电压-最大
3.6 V
- 电源电压-最小
2.3 V
- 最大工作电流
15 mA
- 工作温度
- 40 C to + 85 C
- 安装风格
SMD/SMT
- 封装
Reel
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
ST/意法 |
2403+ |
SOP |
11809 |
原装现货!欢迎随时咨询! |
|||
ST |
24+ |
TSOP |
20000 |
全新原厂原装，进口正品现货，正规渠道可含税！！ |
|||
ST |
TSOP48 |
0324+ |
1240 |
全新原装进口自己库存优势 |
|||
ST/意法 |
23+ |
44-SOIC |
90000 |
只做原装 ！全系列供应可长期供货稳定价格优势！ |
|||
STM |
23+ |
TSOP-48 |
12800 |
公司只有原装 欢迎来电咨询。 |
|||
ST |
20+ |
SOP |
2860 |
原厂原装正品价格优惠公司现货欢迎查询 |
|||
ST |
2016+ |
SOP-44 |
2590 |
只做原装,假一罚十,公司可开17%增值税发票! |
|||
ST/ |
24+ |
TSOP-48 |
5000 |
全新原装正品,现货销售 |
|||
ST |
2511 |
TSOP |
16900 |
电子元器件采购降本 30%!盈慧通原厂直采,砍掉中间差价 |
|||
ST |
23+ |
TSOP |
50000 |
只做原装正品 |
M29F400B芯片相关品牌
M29F400B规格书下载地址
M29F400B参数引脚图相关
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- M29F400
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- M29F200T-70XM1
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- M29F200FT5AN6E2
- M29F200FT5AM6F2
- M29F200FT5AM6E2
- M29F200FT55N3F2 TR
- M29F200FT55N3F2
- M29F200FT55N3E2
- M29F200FT55M3F2 TR
- M29F200FT55M3F2
- M29F200FT55M3E2
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- M29F200FB5AM6E2
- M29F200FB55N6
- M29F200FB55N3F2 TR
- M29F200FB55N3F2
- M29F200FB55N3E2
- M29F200
- M29F160
- M29F100
- M29F040
- M29F010
- M29F002
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- M2951
- M2950
- M293B1
- M293010
- M29150B
- M29150A
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- M28ST-D
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M29F400B数据表相关新闻
M28W160ECB70ZB6 ST/Micron
www.hfxcom.com.
2021-11-11M28C64-A256，M28C64C-15M6，M28C64C-20M1，M28C64X-15M1，M28F101-100K1，M28LV16-25M6，M28LV17-25M6，M28LV64C-20M6，M29F102B-70K1，M34116B1，M74HC00，M74ACT74，M74ACT257，M74HC163，M74HC04，M74HC123
M28C64-A256，M28C64C-15M6，M28C64C-20M1，M28C64X-15M1，M28F101-100K1，M28LV16-25M6，M28LV17-25M6，M28LV64C-20M6，M29F102B-70K1，M34116B1，M74HC00，M74ACT74，M74ACT257，M74HC163，M74HC04，M74HC123
2019-12-29M29W128GL70ZS6E顺德利科技正品原装进口稳定的货源优势的价格
深圳市顺德利科技有限公司0755-8272566018128853661（微信75056055）QQ：782954141
2019-6-18M28W320FCT70N6E顺德利科技正品原装进口稳定的货源优势的价格
深圳市顺德利科技有限公司0755-8272566018128853661（微信75056055）QQ：782954141
2019-6-18M29W128GH70N6E顺德利科技正品原装进口稳定的货源优势的价格
深圳市顺德利科技有限公司0755-8272566018128853661（微信75056055）QQ：782954141
2019-6-18M29W128GL70N6E顺德利科技正品原装进口稳定的货源优势的价格
深圳市顺德利科技有限公司0755-8272566018128853661（微信75056055）QQ：782954141
2019-6-18
DdatasheetPDF页码索引
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