| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
M29F400T | 4 Mbit 512Kb x8 or 256Kb x16, Boot Block Single Supply Flash Memory DESCRIPTION The M29F400 is a non-volatile memory that may be erased electrically at the block or chip level and programmed in-system on a Byte-by-Byte or Word by-Word basis using only a single 5V VCCsupply. For Program and Erase operations the necessary high voltages are generated internally. T | STMICROELECTRONICS 意法半导体 |   | |
4 Mbit 512Kb x8 or 256Kb x16, Boot Block Single Supply Flash Memory DESCRIPTION The M29F400 is a non-volatile memory that may be erased electrically at the block or chip level and programmed in-system on a Byte-by-Byte or Word by-Word basis using only a single 5V VCCsupply. For Program and Erase operations the necessary high voltages are generated internally. T | STMICROELECTRONICS 意法半导体 | | ||
4 Mbit 512Kb x8 or 256Kb x16, Boot Block Single Supply Flash Memory DESCRIPTION The M29F400 is a non-volatile memory that may be erased electrically at the block or chip level and programmed in-system on a Byte-by-Byte or Word by-Word basis using only a single 5V VCCsupply. For Program and Erase operations the necessary high voltages are generated internally. T | STMICROELECTRONICS 意法半导体 | | ||
4 Mbit 512Kb x8 or 256Kb x16, Boot Block Single Supply Flash Memory DESCRIPTION The M29F400 is a non-volatile memory that may be erased electrically at the block or chip level and programmed in-system on a Byte-by-Byte or Word by-Word basis using only a single 5V VCCsupply. For Program and Erase operations the necessary high voltages are generated internally. T | STMICROELECTRONICS 意法半导体 | | ||
4 Mbit 512Kb x8 or 256Kb x16, Boot Block Single Supply Flash Memory DESCRIPTION The M29F400 is a non-volatile memory that may be erased electrically at the block or chip level and programmed in-system on a Byte-by-Byte or Word by-Word basis using only a single 5V VCCsupply. For Program and Erase operations the necessary high voltages are generated internally. T | STMICROELECTRONICS 意法半导体 | | ||
4 Mbit 512Kb x8 or 256Kb x16, Boot Block Single Supply Flash Memory DESCRIPTION The M29F400 is a non-volatile memory that may be erased electrically at the block or chip level and programmed in-system on a Byte-by-Byte or Word by-Word basis using only a single 5V VCCsupply. For Program and Erase operations the necessary high voltages are generated internally. T | STMICROELECTRONICS 意法半导体 | | ||
4 Mbit 512Kb x8 or 256Kb x16, Boot Block Single Supply Flash Memory DESCRIPTION The M29F400 is a non-volatile memory that may be erased electrically at the block or chip level and programmed in-system on a Byte-by-Byte or Word by-Word basis using only a single 5V VCCsupply. For Program and Erase operations the necessary high voltages are generated internally. T | STMICROELECTRONICS 意法半导体 | | ||
4 Mbit 512Kb x8 or 256Kb x16, Boot Block Single Supply Flash Memory DESCRIPTION The M29F400 is a non-volatile memory that may be erased electrically at the block or chip level and programmed in-system on a Byte-by-Byte or Word by-Word basis using only a single 5V VCCsupply. For Program and Erase operations the necessary high voltages are generated internally. T | STMICROELECTRONICS 意法半导体 | | ||
4 Mbit 512Kb x8 or 256Kb x16, Boot Block Single Supply Flash Memory DESCRIPTION The M29F400 is a non-volatile memory that may be erased electrically at the block or chip level and programmed in-system on a Byte-by-Byte or Word by-Word basis using only a single 5V VCCsupply. For Program and Erase operations the necessary high voltages are generated internally. T | STMICROELECTRONICS 意法半导体 | | ||
4 Mbit 512Kb x8 or 256Kb x16, Boot Block Single Supply Flash Memory DESCRIPTION The M29F400 is a non-volatile memory that may be erased electrically at the block or chip level and programmed in-system on a Byte-by-Byte or Word by-Word basis using only a single 5V VCCsupply. For Program and Erase operations the necessary high voltages are generated internally. T | STMICROELECTRONICS 意法半导体 | | ||
4 Mbit 512Kb x8 or 256Kb x16, Boot Block Single Supply Flash Memory DESCRIPTION The M29F400 is a non-volatile memory that may be erased electrically at the block or chip level and programmed in-system on a Byte-by-Byte or Word by-Word basis using only a single 5V VCCsupply. For Program and Erase operations the necessary high voltages are generated internally. T | STMICROELECTRONICS 意法半导体 | | ||
4 Mbit 512Kb x8 or 256Kb x16, Boot Block Single Supply Flash Memory DESCRIPTION The M29F400 is a non-volatile memory that may be erased electrically at the block or chip level and programmed in-system on a Byte-by-Byte or Word by-Word basis using only a single 5V VCCsupply. For Program and Erase operations the necessary high voltages are generated internally. T | STMICROELECTRONICS 意法半导体 | | ||
4 Mbit 512Kb x8 or 256Kb x16, Boot Block Single Supply Flash Memory DESCRIPTION The M29F400 is a non-volatile memory that may be erased electrically at the block or chip level and programmed in-system on a Byte-by-Byte or Word by-Word basis using only a single 5V VCCsupply. For Program and Erase operations the necessary high voltages are generated internally. T | STMICROELECTRONICS 意法半导体 | | ||
4 Mbit 512Kb x8 or 256Kb x16, Boot Block Single Supply Flash Memory DESCRIPTION The M29F400 is a non-volatile memory that may be erased electrically at the block or chip level and programmed in-system on a Byte-by-Byte or Word by-Word basis using only a single 5V VCCsupply. For Program and Erase operations the necessary high voltages are generated internally. T | STMICROELECTRONICS 意法半导体 | | ||
4 Mbit 512Kb x8 or 256Kb x16, Boot Block Single Supply Flash Memory DESCRIPTION The M29F400 is a non-volatile memory that may be erased electrically at the block or chip level and programmed in-system on a Byte-by-Byte or Word by-Word basis using only a single 5V VCCsupply. For Program and Erase operations the necessary high voltages are generated internally. T | STMICROELECTRONICS 意法半导体 | | ||
4 Mbit 512Kb x8 or 256Kb x16, Boot Block Single Supply Flash Memory DESCRIPTION The M29F400 is a non-volatile memory that may be erased electrically at the block or chip level and programmed in-system on a Byte-by-Byte or Word by-Word basis using only a single 5V VCCsupply. For Program and Erase operations the necessary high voltages are generated internally. T | STMICROELECTRONICS 意法半导体 | | ||
4 Mbit 512Kb x8 or 256Kb x16, Boot Block Single Supply Flash Memory DESCRIPTION The M29F400 is a non-volatile memory that may be erased electrically at the block or chip level and programmed in-system on a Byte-by-Byte or Word by-Word basis using only a single 5V VCCsupply. For Program and Erase operations the necessary high voltages are generated internally. T | STMICROELECTRONICS 意法半导体 | | ||
4 Mbit 512Kb x8 or 256Kb x16, Boot Block Single Supply Flash Memory DESCRIPTION The M29F400 is a non-volatile memory that may be erased electrically at the block or chip level and programmed in-system on a Byte-by-Byte or Word by-Word basis using only a single 5V VCCsupply. For Program and Erase operations the necessary high voltages are generated internally. T | STMICROELECTRONICS 意法半导体 | | ||
4 Mbit 512Kb x8 or 256Kb x16, Boot Block Single Supply Flash Memory DESCRIPTION The M29F400 is a non-volatile memory that may be erased electrically at the block or chip level and programmed in-system on a Byte-by-Byte or Word by-Word basis using only a single 5V VCCsupply. For Program and Erase operations the necessary high voltages are generated internally. T | STMICROELECTRONICS 意法半导体 | | ||
4 Mbit 512Kb x8 or 256Kb x16, Boot Block Single Supply Flash Memory DESCRIPTION The M29F400 is a non-volatile memory that may be erased electrically at the block or chip level and programmed in-system on a Byte-by-Byte or Word by-Word basis using only a single 5V VCCsupply. For Program and Erase operations the necessary high voltages are generated internally. T | STMICROELECTRONICS 意法半导体 | | ||
4 Mbit 512Kb x8 or 256Kb x16, Boot Block Single Supply Flash Memory DESCRIPTION The M29F400 is a non-volatile memory that may be erased electrically at the block or chip level and programmed in-system on a Byte-by-Byte or Word by-Word basis using only a single 5V VCCsupply. For Program and Erase operations the necessary high voltages are generated internally. T | STMICROELECTRONICS 意法半导体 | | ||
4 Mbit 512Kb x8 or 256Kb x16, Boot Block Single Supply Flash Memory DESCRIPTION The M29F400 is a non-volatile memory that may be erased electrically at the block or chip level and programmed in-system on a Byte-by-Byte or Word by-Word basis using only a single 5V VCCsupply. For Program and Erase operations the necessary high voltages are generated internally. T | STMICROELECTRONICS 意法半导体 | | ||
4 Mbit 512Kb x8 or 256Kb x16, Boot Block Single Supply Flash Memory DESCRIPTION The M29F400 is a non-volatile memory that may be erased electrically at the block or chip level and programmed in-system on a Byte-by-Byte or Word by-Word basis using only a single 5V VCCsupply. For Program and Erase operations the necessary high voltages are generated internally. T | STMICROELECTRONICS 意法半导体 | | ||
4 Mbit 512Kb x8 or 256Kb x16, Boot Block Single Supply Flash Memory DESCRIPTION The M29F400 is a non-volatile memory that may be erased electrically at the block or chip level and programmed in-system on a Byte-by-Byte or Word by-Word basis using only a single 5V VCCsupply. For Program and Erase operations the necessary high voltages are generated internally. T | STMICROELECTRONICS 意法半导体 | | ||
4 Mbit 512Kb x8 or 256Kb x16, Boot Block Single Supply Flash Memory DESCRIPTION The M29F400 is a non-volatile memory that may be erased electrically at the block or chip level and programmed in-system on a Byte-by-Byte or Word by-Word basis using only a single 5V VCCsupply. For Program and Erase operations the necessary high voltages are generated internally. T | STMICROELECTRONICS 意法半导体 | | ||
4 Mbit 512Kb x8 or 256Kb x16, Boot Block Single Supply Flash Memory DESCRIPTION The M29F400 is a non-volatile memory that may be erased electrically at the block or chip level and programmed in-system on a Byte-by-Byte or Word by-Word basis using only a single 5V VCCsupply. For Program and Erase operations the necessary high voltages are generated internally. T | STMICROELECTRONICS 意法半导体 | | ||
4 Mbit 512Kb x8 or 256Kb x16, Boot Block Single Supply Flash Memory DESCRIPTION The M29F400 is a non-volatile memory that may be erased electrically at the block or chip level and programmed in-system on a Byte-by-Byte or Word by-Word basis using only a single 5V VCCsupply. For Program and Erase operations the necessary high voltages are generated internally. T | STMICROELECTRONICS 意法半导体 | | ||
4 Mbit 512Kb x8 or 256Kb x16, Boot Block Single Supply Flash Memory DESCRIPTION The M29F400 is a non-volatile memory that may be erased electrically at the block or chip level and programmed in-system on a Byte-by-Byte or Word by-Word basis using only a single 5V VCCsupply. For Program and Erase operations the necessary high voltages are generated internally. T | STMICROELECTRONICS 意法半导体 | | ||
4 Mbit 512Kb x8 or 256Kb x16, Boot Block Single Supply Flash Memory DESCRIPTION The M29F400 is a non-volatile memory that may be erased electrically at the block or chip level and programmed in-system on a Byte-by-Byte or Word by-Word basis using only a single 5V VCCsupply. For Program and Erase operations the necessary high voltages are generated internally. T | STMICROELECTRONICS 意法半导体 | | ||
4 Mbit 512Kb x8 or 256Kb x16, Boot Block Single Supply Flash Memory DESCRIPTION The M29F400 is a non-volatile memory that may be erased electrically at the block or chip level and programmed in-system on a Byte-by-Byte or Word by-Word basis using only a single 5V VCCsupply. For Program and Erase operations the necessary high voltages are generated internally. T | STMICROELECTRONICS 意法半导体 | | ||
4 Mbit 512Kb x8 or 256Kb x16, Boot Block Single Supply Flash Memory DESCRIPTION The M29F400 is a non-volatile memory that may be erased electrically at the block or chip level and programmed in-system on a Byte-by-Byte or Word by-Word basis using only a single 5V VCCsupply. For Program and Erase operations the necessary high voltages are generated internally. T | STMICROELECTRONICS 意法半导体 | | ||
4 Mbit 512Kb x8 or 256Kb x16, Boot Block Single Supply Flash Memory DESCRIPTION The M29F400 is a non-volatile memory that may be erased electrically at the block or chip level and programmed in-system on a Byte-by-Byte or Word by-Word basis using only a single 5V VCCsupply. For Program and Erase operations the necessary high voltages are generated internally. T | STMICROELECTRONICS 意法半导体 | | ||
4 Mbit 512Kb x8 or 256Kb x16, Boot Block Single Supply Flash Memory DESCRIPTION The M29F400 is a non-volatile memory that may be erased electrically at the block or chip level and programmed in-system on a Byte-by-Byte or Word by-Word basis using only a single 5V VCCsupply. For Program and Erase operations the necessary high voltages are generated internally. T | STMICROELECTRONICS 意法半导体 | | ||
4 Mbit 512Kb x8 or 256Kb x16, Boot Block Single Supply Flash Memory DESCRIPTION The M29F400 is a non-volatile memory that may be erased electrically at the block or chip level and programmed in-system on a Byte-by-Byte or Word by-Word basis using only a single 5V VCCsupply. For Program and Erase operations the necessary high voltages are generated internally. T | STMICROELECTRONICS 意法半导体 | | ||
4 Mbit 512Kb x8 or 256Kb x16, Boot Block Single Supply Flash Memory DESCRIPTION The M29F400 is a non-volatile memory that may be erased electrically at the block or chip level and programmed in-system on a Byte-by-Byte or Word by-Word basis using only a single 5V VCCsupply. For Program and Erase operations the necessary high voltages are generated internally. T | STMICROELECTRONICS 意法半导体 | | ||
4 Mbit 512Kb x8 or 256Kb x16, Boot Block Single Supply Flash Memory DESCRIPTION The M29F400 is a non-volatile memory that may be erased electrically at the block or chip level and programmed in-system on a Byte-by-Byte or Word by-Word basis using only a single 5V VCCsupply. For Program and Erase operations the necessary high voltages are generated internally. T | STMICROELECTRONICS 意法半导体 | | ||
4 Mbit 512Kb x8 or 256Kb x16, Boot Block Single Supply Flash Memory DESCRIPTION The M29F400 is a non-volatile memory that may be erased electrically at the block or chip level and programmed in-system on a Byte-by-Byte or Word by-Word basis using only a single 5V VCCsupply. For Program and Erase operations the necessary high voltages are generated internally. T | STMICROELECTRONICS 意法半导体 | | ||
4 Mbit 512Kb x8 or 256Kb x16, Boot Block Single Supply Flash Memory DESCRIPTION The M29F400 is a non-volatile memory that may be erased electrically at the block or chip level and programmed in-system on a Byte-by-Byte or Word by-Word basis using only a single 5V VCCsupply. For Program and Erase operations the necessary high voltages are generated internally. T | STMICROELECTRONICS 意法半导体 | | ||
4 Mbit 512Kb x8 or 256Kb x16, Boot Block Single Supply Flash Memory DESCRIPTION The M29F400 is a non-volatile memory that may be erased electrically at the block or chip level and programmed in-system on a Byte-by-Byte or Word by-Word basis using only a single 5V VCCsupply. For Program and Erase operations the necessary high voltages are generated internally. T | STMICROELECTRONICS 意法半导体 | | ||
4 Mbit 512Kb x8 or 256Kb x16, Boot Block Single Supply Flash Memory DESCRIPTION The M29F400 is a non-volatile memory that may be erased electrically at the block or chip level and programmed in-system on a Byte-by-Byte or Word by-Word basis using only a single 5V VCCsupply. For Program and Erase operations the necessary high voltages are generated internally. T | STMICROELECTRONICS 意法半导体 | | ||
4 Mbit 512Kb x8 or 256Kb x16, Boot Block Single Supply Flash Memory DESCRIPTION The M29F400 is a non-volatile memory that may be erased electrically at the block or chip level and programmed in-system on a Byte-by-Byte or Word by-Word basis using only a single 5V VCCsupply. For Program and Erase operations the necessary high voltages are generated internally. T | STMICROELECTRONICS 意法半导体 | | ||
4 Mbit 512Kb x8 or 256Kb x16, Boot Block Single Supply Flash Memory DESCRIPTION The M29F400 is a non-volatile memory that may be erased electrically at the block or chip level and programmed in-system on a Byte-by-Byte or Word by-Word basis using only a single 5V VCCsupply. For Program and Erase operations the necessary high voltages are generated internally. T | STMICROELECTRONICS 意法半导体 | | ||
4 Mbit 512Kb x8 or 256Kb x16, Boot Block Single Supply Flash Memory DESCRIPTION The M29F400 is a non-volatile memory that may be erased electrically at the block or chip level and programmed in-system on a Byte-by-Byte or Word by-Word basis using only a single 5V VCCsupply. For Program and Erase operations the necessary high voltages are generated internally. T | STMICROELECTRONICS 意法半导体 | | ||
4 Mbit 512Kb x8 or 256Kb x16, Boot Block Single Supply Flash Memory DESCRIPTION The M29F400 is a non-volatile memory that may be erased electrically at the block or chip level and programmed in-system on a Byte-by-Byte or Word by-Word basis using only a single 5V VCCsupply. For Program and Erase operations the necessary high voltages are generated internally. T | STMICROELECTRONICS 意法半导体 | | ||
4 Mbit 512Kb x8 or 256Kb x16, Boot Block Single Supply Flash Memory DESCRIPTION The M29F400 is a non-volatile memory that may be erased electrically at the block or chip level and programmed in-system on a Byte-by-Byte or Word by-Word basis using only a single 5V VCCsupply. For Program and Erase operations the necessary high voltages are generated internally. T | STMICROELECTRONICS 意法半导体 | | ||
4 Mbit 512Kb x8 or 256Kb x16, Boot Block Single Supply Flash Memory DESCRIPTION The M29F400 is a non-volatile memory that may be erased electrically at the block or chip level and programmed in-system on a Byte-by-Byte or Word by-Word basis using only a single 5V VCCsupply. For Program and Erase operations the necessary high voltages are generated internally. T | STMICROELECTRONICS 意法半导体 | | ||
4 Mbit 512Kb x8 or 256Kb x16, Boot Block Single Supply Flash Memory DESCRIPTION The M29F400 is a non-volatile memory that may be erased electrically at the block or chip level and programmed in-system on a Byte-by-Byte or Word by-Word basis using only a single 5V VCCsupply. For Program and Erase operations the necessary high voltages are generated internally. T | STMICROELECTRONICS 意法半导体 | | ||
4 Mbit 512Kb x8 or 256Kb x16, Boot Block Single Supply Flash Memory DESCRIPTION The M29F400 is a non-volatile memory that may be erased electrically at the block or chip level and programmed in-system on a Byte-by-Byte or Word by-Word basis using only a single 5V VCCsupply. For Program and Erase operations the necessary high voltages are generated internally. T | STMICROELECTRONICS 意法半导体 | | ||
4 Mbit 512Kb x8 or 256Kb x16, Boot Block Single Supply Flash Memory DESCRIPTION The M29F400 is a non-volatile memory that may be erased electrically at the block or chip level and programmed in-system on a Byte-by-Byte or Word by-Word basis using only a single 5V VCCsupply. For Program and Erase operations the necessary high voltages are generated internally. T | STMICROELECTRONICS 意法半导体 | | ||
4 Megabit (524,288 x 8-Bit/262,144 x 16-Bit) CMOS 5.0 Volt-only, Sector Erase Flash Memory GENERAL DESCRIPTION The Am29F400A is a 4 Mbit, 5.0 Volt-only Flash memory organized as 512 Kbytes of 8 bits each or 256 Kwords of 16 bits each. The 4 Mbits of data is divided into 11 sectors of one 16 Kbyte, two 8 Kbyte, one 32 Kbyte, and seven 64 Kbytes, for flexible erase capability. The 8 bits | AMD 超威半导体 | | ||
4 Megabit (524,288 x 8-Bit/262,144 x 16-Bit) CMOS 5.0 Volt-only, Sector Erase Flash Memory GENERAL DESCRIPTION The Am29F400A is a 4 Mbit, 5.0 Volt-only Flash memory organized as 512 Kbytes of 8 bits each or 256 Kwords of 16 bits each. The 4 Mbits of data is divided into 11 sectors of one 16 Kbyte, two 8 Kbyte, one 32 Kbyte, and seven 64 Kbytes, for flexible erase capability. The 8 bits | AMD 超威半导体 | | ||
4 Megabit (512 K x 8-Bit/256 K x 16-Bit) CMOS 5.0 Volt-only Boot Sector Flash Memory GENERAL DESCRIPTION The Am29F400B is a 4 Mbit, 5.0 volt-only Flash memory organized as 524,288 bytes or 262,144 words. The device is offered in 44-pin SO and 48-pin TSOP packages. The device is also available in Known Good Die (KGD) form. For more information, refer to publication number 21258 | AMD 超威半导体 | | ||
4 Megabit (512 K x 8-Bit/256 K x 16-Bit) CMOS 5.0 Volt-only Boot Sector Flash Memory 文件：870.13 Kbytes Page：43 Pages | AMD 超威半导体 | | ||
4 Megabit (512 K x 8-Bit/256 K x 16-Bit) CMOS 5.0 Volt-only Boot Sector Flash Memory 文件：911.65 Kbytes Page：42 Pages | AMD 超威半导体 | |
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
ST |
24+ |
TSOP |
20000 |
全新原厂原装，进口正品现货，正规渠道可含税！！ |
|||
SST |
原厂封装 |
9800 |
原装进口公司现货假一赔百 |
||||
ST |
24+ |
SSOP-48 |
37500 |
原装正品现货,价格有优势! |
|||
ST/意法 |
23+ |
TSOP |
7700 |
一级代理原厂VIP渠道,专注军工、汽车、医疗、工业、 |
|||
ST |
25+23+ |
TSSOP48 |
18788 |
绝对原装正品全新进口深圳现货 |
|||
ST |
24+ |
SSOP |
6980 |
原装现货,可开13%税票 |
|||
SGS-THOM |
25+ |
TSSOP |
4500 |
全新原装、诚信经营、公司现货销售! |
|||
SGS-THOMSON |
1997 |
TSSOP |
1689 |
原装现货海量库存欢迎咨询 |
|||
ST |
23+ |
TSOP |
16900 |
正规渠道,只有原装! |
|||
ST |
20+ |
TSSOP |
2960 |
诚信交易大量库存现货 |
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M29F400T数据表相关新闻
M28W160ECB70ZB6 ST/Micron
www.hfxcom.com.
2021-11-11M28C64-A256，M28C64C-15M6，M28C64C-20M1，M28C64X-15M1，M28F101-100K1，M28LV16-25M6，M28LV17-25M6，M28LV64C-20M6，M29F102B-70K1，M34116B1，M74HC00，M74ACT74，M74ACT257，M74HC163，M74HC04，M74HC123
M28C64-A256，M28C64C-15M6，M28C64C-20M1，M28C64X-15M1，M28F101-100K1，M28LV16-25M6，M28LV17-25M6，M28LV64C-20M6，M29F102B-70K1，M34116B1，M74HC00，M74ACT74，M74ACT257，M74HC163，M74HC04，M74HC123
2019-12-29M29W128GL70ZS6E顺德利科技正品原装进口稳定的货源优势的价格
深圳市顺德利科技有限公司 0755-82725660 18128853661（微信75056055） QQ：782954141
2019-6-18M28W320FCT70N6E顺德利科技正品原装进口稳定的货源优势的价格
深圳市顺德利科技有限公司 0755-82725660 18128853661（微信75056055） QQ：782954141
2019-6-18M29W128GH70N6E顺德利科技正品原装进口稳定的货源优势的价格
深圳市顺德利科技有限公司 0755-82725660 18128853661（微信75056055） QQ：782954141
2019-6-18M29W128GL70N6E顺德利科技正品原装进口稳定的货源优势的价格
深圳市顺德利科技有限公司 0755-82725660 18128853661（微信75056055） QQ：782954141
2019-6-18
DdatasheetPDF页码索引
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