SUPER FAST RECOVER Y RECTIFIER DIODES

Features ● Low cost ● Low leakage ● Low forward voltage drop ● High current capability ● Easily cleaned with alcohol,Isopropanol and similar solvents

SUPER FAST RECTIFIER

FEATURES ◇ Low cost ◇ Low leakage ◇ Low forward voltage drop ◇ High current capability ◇ Easily cleaned with alcohol,Isopropanol and similar solvents ◇ The plastic material carries U/Lrecognition 94V-0

Plastic Ultra-Fast Recover Rectifier Reverse Voltage 50 to 600V Forward Current 2.0A

Features • Low reverse leakage • High forward surge capability • High temperature soldering guaranteed: 260℃/10 seconds, 0.375 (9.5mm) lead length, 5 lbs. (2.3kg) tension • Lead and body according with RoHS standard

SUPERFAST RECOVERY RECTIFIERS(VOLTAGE - 50 to 600 Volts CURRENT - 2.0 Amperes)

FEATURES ● Superfast recovery times-epitaxial construction ● Low forward voltage, high current capability ● Exceeds environmental standards of MIL-S-19500/228 ● Hermetically sealed ● Low leakage ● High surge capability ● Plastic package has Underwriters Laboratories Flammability Classificat

SUPERFAST RECOVERY RECTIFIERS

FEATURES ● Superfast recovery times-epitaxial construction ● Low forward voltage, high current capability ● Exceeds environmental standards of MIL-S-19500/228 ● Hermetically sealed ● Low leakage ● High surge capability ● Plastic package has Underwriters Laboratories Flammability Classificat

Super Fast Rectifiers

Features ◇ Low cost ◇ Low leakage ◇ Low forward voltage drop ◇ High current capability ◇ Easily cleaned with alcohol,Isopropanol and similar solvents ◇ The plastic material carries U/Lrecognition 94V-0

SUPER FAST RECTIFIERS

FEATURES ◇ Low cost ◇ Low leakage ◇ Low forward voltage drop ◇ High current capability ◇ Easily cleaned with alcohol,Isopropanol and similar solvents ◇ The plastic material carries U/Lrecognition 94V-0

SUPERFAST RECOVERY RECTIFIERS

FEATURES ● Superfast recovery times-epitaxial construction ● Low forward voltage, high current capability ● Exceeds environmental standards of MIL-S-19500/228 ● Hermetically sealed ● Low leakage ● High surge capability ● Plastic package has Underwriters Laboratories

SUPERFAST RECOVERY RECTIFIERS

FEATURES • Superfast recovery times-epitaxial construction. • Low forward voltage, high current capability. • Exceeds environmental standards of MIL-S-19500/228. • Hermetically sealed. • Low leakage. • High surge capability. • Plastic package has Underwriters Laboratories Flammability Class

2.0A SUPERFAST RECTIFIER

Features ● Diffused Junction ● Low Forward Voltage Drop ● High Current Capability ● High Reliability ● High Surge Current Capability

2A 300V Fast recovery diode

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SUPER FAST RECOVERY RECTIFIER DIODES

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SUPER FAST RECTIFIERS

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Plastic Super Fast Recover Rectifier

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SUPERFAST RECOVERY RECTIFIERS

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SUPERFAST RECOVERY RECTIFIERS

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极快速恢复整流器

Superfast Recovery Rectitiers

FEATURES • Superfast recovery times-epitaxial construction. • Low forward voltage, high current capability. • Exceeds environmental standards of MIL-S-19500/228. • Hermetically sealed. • Low leakage. • High surge capability. • Plastic package has Underwriters Laboratories Flammability Class

SUPER FAST RECTIFIERS

FEATURES ◇ Low cost ◇ Low leakage ◇ Low forward voltage drop ◇ High current capability ◇ Easily cleaned with alcohol,Isopropanol and similar solvents ◇ The plastic material carries U/Lrecognition 94V-0

SUPER FAST RECTIFIERS

FEATURES ◇ Low cost ◇ Low leakage ◇ Low forward voltage drop ◇ High current capability ◇ Easily cleaned with alcohol,Isopropanol and similar solvents ◇ The plastic material carries U/Lrecognition 94V-0

封装/外壳：DO-204AC，DO-15，轴向 包装：卷带（TR） 描述：GLASS PASSIVATED SUPERFAST RECOV 分立半导体产品 二极管 - 整流器 - 单

20.0A GLASS PASSIVATED SUPERFAST RECTIFIER

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20.0A GLASS PASSIVATED SUPER FAST RECTIFIER

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超快速恢复整流管

2A,300V,Super Fast Rectifiers

P-channel enhancement mode MOS transistor

GENERAL DESCRIPTION P-channel, enhancement mode, logic level, field-effect power transistor. This device has low threshold voltage and extremely fast switching making it ideal for battery powered applications and high speed digital interfacing. The BSH203 is supplied in the SOT23 subminiature sur

Dual N-channel enhancement mode TrenchMOS transistor

GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic envelope using ’trench’ technology. The device has very low on-state resistance. It is intended for use in dc to dc converters and general purpose switching applications. The PHN203 is supplied in the SOT96

TRISILTM

DESCRIPTION The SMTPBxx series has been designedto protect telecommunication equipment against lightning and transient induced by AC power lines. FEATURES BIDIRECTIONAL CROWBAR PROTECTION. BREAKDOWNVOLTAGE RANGE: From 62 V To 270 V. HOLDING CURRENT: IH= 150 mA min REPETITIVE PE

SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR

General Description Silicon VDMOS and LDMOS transistors designed specifically for broadband RF applications. Suitable for Militry Radios, Cellular and Paging Amplifier Base Stations, Broadcast FM/AM, MRI, Laser Driver and others. Polyfet™ process features low feedback and output capacitances

SCHOTTKY BARRIER RECTIFIERS(2.0A,20-60V)

Using the Schottky Barrier principle with a Molybdenum barrier metal. These state-of-the-art geometry features epitaxial construction with oxide passivation and metal overly contact. Ideally suited for low voltage, high frequency rectification, or as free wheeling and polarity protection diodes.