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ER1601D

16Ampere Heat Sink Dual Doubler Polarity Super Fast Recovery Rectifiers

文件:671.74 Kbytes Page:2 Pages

THINKISEMI

思祁半导体

16A D2PAK SURFACE MOUNT SUPER FAST RECTIFIER

Features ● Glass Passivated Die Construction ● Ideally Suited for Automatic Assembly ● Low Profile Package ● High Surge Current Capability ● Low Power Loss, High Efficiency ● Super-Fast Recovery Time ● Plastic Case Material has UL Flammability Classification Rating 94V-O

WTE

Won-Top Electronics

MICROWAVE POWER GaAs FET

High-power GaAs FET (small signal gain stage) S to X BAND / 0.15W non - matched DESCRIPTION The MGF1601B, medium-power GaAs FET with an N-channel Schottky gate, is designed for use in S to X band amplifiers and oscillators. The hermetically sealed metalceramic package assures minimum parasitic

MITSUBISHI

三菱电机

Silicon PNP(NPN) epitaxial planer transistor

Silicon PNP epitaxial planer transistor (Tr1) Silicon NPN epitaxial planer transistor (Tr2) For general amplification ■ Features ● Two elements incorporated into one package. (Emitter-coupled transistors) ● Reduction of the mounting area and assembly cost by one half.

PANASONIC

松下

PLLatinum??Low Cost Dual Frequency Synthesizer

文件:196.67 Kbytes Page:14 Pages

NSC

国半

PLLatinum??Low Cost Dual Frequency Synthesizer

文件:196.67 Kbytes Page:14 Pages

NSC

国半

PLLatinum??Low Cost Dual Frequency Synthesizer

文件:196.67 Kbytes Page:14 Pages

NSC

国半

ER1601D产品属性

  • 类型

    描述

  • 型号

    ER1601D

  • 制造商

    WTE

  • 制造商全称

    Won-Top Electronics

  • 功能描述

    16A D2PAK SURFACE MOUNT SUPER FAST RECTIFIER

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