Serial Configuration Devices

■ 1-, 4-, 16-, 64-, and 128-Mbit flash memory devices that serially configure Stratix® III, Stratix II GX, and Stratix II FPGAs, Arria™ GX FPGAs, and the Cyclone® series FPGAs using the active serial (AS) configuration scheme\r\n■ Easy-to-use four-pin interface\r\n■ Low cost, low-pin count, and non-;

Serial Configuration Devices

文件：704.72 Kbytes Page：38 Pages

Serial Configuration Devices

文件：704.72 Kbytes Page：38 Pages

封装/外壳：16-SOIC（0.295"，7.50mm 宽） 包装：托盘 描述：IC CONFIG DEVICE 128MBIT 16SOIC 集成电路（IC） 用于 FPGA 的配置 PROM

N-channel enhancement mode vertical D-MOS transistor

DESCRIPTION N-channel enhancement mode vertical D-MOS transistor in a SOT223 envelope, intended for use as a line current interruptor in telephone sets and for applications in relay, high-speed and line transformer drivers. FEATURES • Direct interface to C-MOS, TTL, etc. • High-speed switching

HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR

DESCRIPTION The device is manufactured using high voltage Multi Epitaxial Planar technology for high switching speeds and medium voltage capability. It uses a Cellular Emitter structure with planar edge termination to enhance switching speeds while maintaining the wide RBSOA. The device is desi

Silicon Complementary Transistors Audio Output, Video, Driver

Description: The NTE128 (NPN) and NTE129 (PNP) are silicon complementary transistors in a TO39 type package designed primarily for amplifier and switching applications. These devices features high breakdown voltages, low leakage currents, low capacity, and a beta useful over an extremely wide c

Silicon Complementary Transistors General Purpose Amp

Description: The NTE128P (NPN) and NTE129P (PNP) are silicon complemedntary transistors designed for use in general purpose power amplifier and switching applications. Features: • High VCE Ratings • Exceptional Power Dissipation Capability

Silicon epitaxial planar type

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