24V/50mA General-Purpose Output-Driver

The epc70x family products are general purpose CMOS power switches for 24V interfaces. The devices are capable to drive a load of 50mA at 30VDC. If higher driving current is necessary or the output voltage shall be higher than 30VDC, the chips can be used to drive an external power transistor. In th • Low-side power switch\r\n• Driving capability without external transistor 50 mA/30VDC\r\n• Programmable short-circuit detection delay-time and recovery time\r\n• Static (epc700) or flashing (epc702) indication of the over-current sta\u0002tus\r\n• Self-healing output mode\r\n• Available in CSP6 pa;

24V/50mA General-Purpose Output-Driver

文件：264.09 Kbytes Page：11 Pages

200 V、170 A耐辐射增强型功率晶体管

• 超高效率\n• 超低RDS(on)\n• 超低栅极电荷\n• 超小占板面积\n• 重量轻\n• 总剂量• 额定 > 1 Mrad;

24V/50mA General-Purpose Output-Driver

文件：264.09 Kbytes Page：11 Pages

24V/50mA General-Purpose Output-Driver

文件：264 Kbytes Page：11 Pages

24V/50mA General-Purpose Output-Driver

文件：264 Kbytes Page：11 Pages

24V/50mA General-Purpose Output-Driver

文件：264.09 Kbytes Page：11 Pages

CATV amplifier modules

DESCRIPTION Hybrid amplifier module in a SOT115J package operating at a supply voltage of 24 V (DC). FEATURES • Excellent linearity • Extremely low noise • Silicon nitride passivation • Rugged construction • Gold metallization ensures excellent reliability. APPLICATIONS • CATV systems ope

CATV amplifier module

DESCRIPTION Hybrid high dynamic range cascode amplifier module with darlington pre-stage dies operating at a voltage supply of 24 V (DC). FEATURES • Excellent linearity • Extremely low noise • Silicon nitride passivation • Rugged construction • Gold metallization ensures excellent reliabili

CATV amplifier module

DESCRIPTION Hybrid amplifier module in a SOT115J package operating at a voltage supply of 24 V (DC). FEATURES • Excellent linearity • Extremely low noise • Silicon nitride passivation • Rugged construction • Gold metallization ensures excellent reliability • Mirrored image pinning of the B

4.0 AMPERE DARLINGTON POWER TRANSISTORS COMPLEMENTARY SILICON 40 WATT 50 WATT

. . . designed for general–purpose amplifier and low–speed switching applications. • High DC Current Gain — hFE = 2000 (Typ) @ IC = 2.0 Adc • Monolithic Construction with Built–in Base–Emitter Resistors to Limit Leakage Multiplication • Choice of Packages — MJE700 and MJE800 series

GaAlAs Semiconductor Laser

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