位置:首页 > IC中文资料 > EPC2215

型号 功能描述 生产厂家 企业 LOGO 操作
EPC2215

200 V, 162 A增强型功率晶体管

• 开关频率更快 – 更低开关损耗及更低驱动功率\n• 效率更高 - 更低传导及开关损耗、零反向恢复损耗\n• 占板面积更小– 实现更高功率密度的电源转换;

EPC

EPC2215

EPC2215 ??Enhancement Mode Power Transistor

文件:1.204 Mbytes Page:6 Pages

EPC-CO

RF & MICROWAVE TRANSISTORS AVIONICS APPLICATIONS

DESCRIPTION: The MS2215 is designed for specialized avionics applications, including Mode-S, TCAS and JTIDS where power is provided under pulse formats utilizing short pulse widths and high burst or overall duty cycles. Features ● REFRACTORY/GOLD METALLIZATION ● EMITTER SITE BALLASTED ● LO

MICROSEMI

美高森美

Silicon NPN epitaxial planer transistor

Silicon NPN epitaxial planar transistor For digital circuits ■ Features • Costs can be reduced through downsizing of the equipment and reduction of the number of parts. • Mini type package allowing easy automatic insertion through tape packing and magazine packing

PANASONIC

松下

Silicon NPN epitaxial planer transistor

Silicon NPN epitaxial planer transistor For switching/digital circuits ■ Features ● Two elements incorporated into one package. (Base-coupled transistors with built-in resistor) ● Reduction of the mounting area and assembly cost by one half.

PANASONIC

松下

Tirple High PSRR, Low Noise uCap LDO

文件:112.16 Kbytes Page:11 Pages

MICREL

麦瑞半导体

NPN SILICON BIAS RESISTOR TRANSISTOR

文件:150.44 Kbytes Page:12 Pages

ONSEMI

安森美半导体

EPC2215产品属性

  • 类型

    描述

  • 配置:

    单路

  • VDS最大值:

    200

  • VGS最大值:

    6

  • RDS(on)(mΩ)最大值@5VGS:

    8

  • QG(nC)典型值:

    13.6

  • QGS(nC)典型值:

    3.3

  • QGD(nC)典型值:

    2.1

  • QOSS(nC)典型值:

    69

  • ID (A):

    32

  • 脉冲电流 ID (A):

    162

  • 封装(mm):

    LGA 4.6 x 1.6

更新时间:2026-5-22 17:30:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
EPC
20+
Die
2500
EPC
21+
2488
只做原装鄙视假货15118075546
26+
N/A
54000
一级代理-主营优势-实惠价格-不悔选择

EPC2215数据表相关新闻