4 Line Common Mode Filter

4 Line Common Mode Filter • Impedance limits per chart measured using HP4193A Vector Impedance Meter • Package transfer-molded epoxy suitable for auto-insertion • Part is symmetrical : May be inserted either way • Temperature Rise 45°C Max. @ 25°C Ambient • Maximum Current : 1 Adc/W

Common Mode Chokes

High Efficiency Heterojunction Power FET

[Excelics] High Efficiency Heterojunction Power FET • +39.5dBm TYPICAL OUTPUT POWER • 18.0dB TYPICAL POWER GAIN AT 2GHz • 0.4 X 12,000 MICRON RECESSED “MUSHROOM” GATE • Si3N4 PASSIVATION • ADVANCED EPITAXIAL HETEROJUNCTION PROFILE PROVIDES EXTRA HIGH POWER EFFICIENCY

High Efficiency Heterojunction Power FET

High Efficiency Heterojunction Power FET • +39.5dBm TYPICAL OUTPUT POWER • 18.0dB TYPICAL POWER GAIN AT 2GHz • 0.4 X 12,000 MICRON RECESSED “MUSHROOM” GATE • Si3N4PASSIVATION • ADVANCED EPITAXIAL HETEROJUNCTION PROFILE PROVIDES EXTRA HIGH POWER EFFICIENCY, AND HIGH RELIABILIT

High Efficiency Heterojunction Power FET

• +29.5dBm TYPICAL OUTPUT POWER • 9.0dB TYPICAL POWER GAIN FOR EPA120B AND 10.5dB FOR EPA120BV AT 18GHz • 0.3 X 1200 MICRON RECESSED “MUSHROOM” GATE • Si3N4 PASSIVATION • ADVANCED EPITAXIAL DOPING PROFILE PROVIDES HIGH POWER EFFICIENCY, LINEARITY AND RELIABILITY • EPA120BV WIT

High Efficiency Heterojunction Power FET

• +29.5dBm TYPICAL OUTPUT POWER • 9.0dB TYPICAL POWER GAIN FOR EPA120B AND 10.5dB FOR EPA120BV AT 18GHz • 0.3 X 1200 MICRON RECESSED “MUSHROOM” GATE • Si3N4 PASSIVATION • ADVANCED EPITAXIAL DOPING PROFILE PROVIDES HIGH POWER EFFICIENCY, LINEARITY AND RELIABILITY • EPA120BV WIT

High Efficiency Heterojunction Power FET

FEATURES • +29.5dBm TYPICAL OUTPUT POWER • 19.5dB TYPICAL POWER GAIN AT 2GHz • 0.5 X 1200 MICRON RECESSED “MUSHROOM” GATE • Si3N4 PASSIVATION AND PLATED HEAT SINK • ADVANCED EPITAXIAL DOPING PROFILE PROVIDES HIGH POWER EFFICIENCY, LINEARITY AND RELIABILITY • Idss SORTED IN 30mA PER

High Efficiency Heterojunction Power FET

FEATURES • NON-HERMETIC SURFACE MOUNT 160MIL METAL CERAMIC PACKAGE • +29 dBm OUTPUT POWER AT 1dB COMPRESSION • 18.0 dB GAIN AT 2 GHz • 0.5x1200 MICRON RECESSED “MUSHROOM” GATE • Si3N4 PASSIVATION • ADVANCED EPITAXIAL DOPING PROFILE PROVIDES HIGH POWER EFFICIENCY, LINEARITY AND RELI

High Efficiency Heterojunction Power FET

High Efficiency Heterojunction Power FET • +29.5dBm TYPICAL OUTPUT POWER • 9.5dB TYPICAL POWER GAIN FOR EPA120E AND 10.5dB FOR EPA120EV AT 18GHz • 0.3 X 1200 MICRON RECESSED “MUSHROOM” GATE • Si3N4 PASSIVATION • ADVANCED EPITAXIAL DOPING PROFILE PROVIDES HIGH POWER EFFICIENCY,

High Efficiency Heterojunction Power FET

[Excelics] High Efficiency Heterojunction Power FET • +29.5dBm TYPICAL OUTPUT POWER • 9.5dB TYPICAL POWER GAIN AT 18GHz • 0.3 X 1200 MICRON RECESSED “MUSHROOM” GATE • Si3N4 PASSIVATION • ADVANCED EPITAXIAL HETEROJUNCTION PROFILE PROVIDES EXTRA HIGH POWER EFFICIENCY, AND H

High Efficiency Heterojunction Power FET

High Efficiency Heterojunction Power FET • +29.5dBm TYPICAL OUTPUT POWER • 9.5dB TYPICAL POWER GAIN FOR EPA120E AND 10.5dB FOR EPA120EV AT 18GHz • 0.3 X 1200 MICRON RECESSED “MUSHROOM” GATE • Si3N4 PASSIVATION • ADVANCED EPITAXIAL DOPING PROFILE PROVIDES HIGH POWER EFFICIENCY,

4 Line Common Mode Filter

4 Line Common Mode Filter • Impedance limits per chart measured using HP4193A Vector Impedance Meter • Package transfer-molded epoxy suitable for auto-insertion • Part is symmetrical : May be inserted either way • Temperature Rise 45°C Max. @ 25°C Ambient • Maximum Current : 1 Adc/W

linear adapter

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linear power supply

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linear power supply

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描述：AC/AC WALL MOUNT ADAPTER 12V 12W 电源 - 外部/内部（板外） AC AC 壁装式适配器

linear adapter

文件：419.84 Kbytes Page：7 Pages

描述：AC/AC WALL MOUNT ADAPTER 12V 12W 电源 - 外部/内部（板外） AC AC 壁装式适配器

linear power supply

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8-12V high efficiency heterojunction power FET

High Efficiency Heterojunction Power FET

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4 Line Common Mode Filter

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High Efficiency Heterojunction Power FET

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High Efficiency Heterojunction Power FET

High Efficiency Heterojunction Power FET

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ULTRAFAST RECTIFIERS 1.0 AMPERE 200-400-600 VOLTS

SWITCHMODE™ Power Rectifiers . . . designed for use in switching power supplies, inverters and as free wheeling diodes, these state–of–the–art devices have the following features: • Ultrafast 25, 50 and 75 Nanosecond Recovery Times • 175°C Operating Junction Temperature • Low Forward Voltage

ZENER DIODES 200 mW 2 PINS SUPER MINI MOLD

DESCRIPTION Type RD2.0S to RD120S Series are 2 PIN Super Mini Mold Package zener diodes possessing an allowable power dissipation of 200 mW. FEATURES • Sharp Breakdown characteristic. • Vz: Applied E24 standard. APPLICATIONS Circuit for Constant Voltage, Constant Current, W

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The SA5.0A series is designed to protect voltage sensitive components from high voltage, high energy transients. They have excellent clamping capability, high surge capability, low zener impedance and fast response time. The SA5.0A series is supplied in Motorola’s exclusive, cost-effective, highly

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Plastic Medium-Power Complementary Silicon Transistors . . . designed for general–purpose amplifier and low–speed switching applications. • High DC Current Gain — hFE = 2500 (Typ) @ IC = 4.0 Adc • Collector–Emitter Sustaining Voltage — @ 100 mAdc VCEO(sus) = 60 Vdc (Min) — TIP12

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