High Efficiency Heterojunction Power FET

• +29.5dBm TYPICAL OUTPUT POWER • 9.0dB TYPICAL POWER GAIN FOR EPA120B AND 10.5dB FOR EPA120BV AT 18GHz • 0.3 X 1200 MICRON RECESSED “MUSHROOM” GATE • Si3N4 PASSIVATION • ADVANCED EPITAXIAL DOPING PROFILE PROVIDES HIGH POWER EFFICIENCY, LINEARITY AND RELIABILITY • EPA120BV WIT

High Efficiency Heterojunction Power FET

• +29.5dBm TYPICAL OUTPUT POWER • 9.0dB TYPICAL POWER GAIN FOR EPA120B AND 10.5dB FOR EPA120BV AT 18GHz • 0.3 X 1200 MICRON RECESSED “MUSHROOM” GATE • Si3N4 PASSIVATION • ADVANCED EPITAXIAL DOPING PROFILE PROVIDES HIGH POWER EFFICIENCY, LINEARITY AND RELIABILITY • EPA120BV WIT

High Efficiency Heterojunction Power FET

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High Efficiency Heterojunction Power FET

Precision Wirewound Resistors

100 Series / SM Series / PC Series • Resistances to 6 Megohms • Resistance Tolerances to ±0.005 • Temperature Coeffcients of ±2 ppm/°C • High TCR Available (Balco & Platinum Wire) • 100 Acceptance Tested / Traceable to NIST • Long Term Stability / 100ppm/year • Matched Resistance Sets t

SHIELDED SMT POWER INDUCTORS

● FEATURE Various high power inductor are Superior to be high saturation for surface mounting ● APPLICATIONS 2 DC/DC converter power supply, Telecommunication equipment

THREADED INSERT, BLIND, REGULAR HEAD STYLE LIGHT DUTY-PRESS IN

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Precision Wirewound Resistors

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Temperature Sensors Line Guide

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