5 Tap High Speed CMOS (HCT) Compatible Active Delay Lines

文件：21.69 Kbytes Page：1 Pages

5 Tap High Speed CMOS (HCT) Compatible Active Delay Lines

文件：21.69 Kbytes Page：1 Pages

5 Tap High Speed CMOS (HCT) Compatible Active Delay Lines

文件：21.69 Kbytes Page：1 Pages

5 Tap High Speed CMOS (HCT) Compatible Active Delay Lines

文件：21.69 Kbytes Page：1 Pages

5 Tap High Speed CMOS (HCT) Compatible Active Delay Lines

文件：21.69 Kbytes Page：1 Pages

5 Tap High Speed CMOS (HCT) Compatible Active Delay Lines

文件：21.69 Kbytes Page：1 Pages

isc N-Channel MOSFET Transistor

DESCRIPTION ·Drain Source Voltage : VDSS= 40V(Min) ·Low RDS(ON) ·Fast Switching Speed ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for Switched Mode Power Supplies (SMPS), motor control,welding, and in general purpose switchi

N-channel TrenchMOS logic level FET

1.1 General description Logic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product has been designed and qualified to the appropriate AEC standard for use in automotive critical applications. 1.2 Features and benefits AE

TrenchMOS logic level FET

Description N-channel enhancement mode field-effect power transistor in a plastic package using TrenchMOS™ technology, featuring very low on-state resistance. Features ■ TrenchMOS™ technology ■ Q101 compliant ■ 175 °C rated ■ Logic level compatible. Applications ■ Automotive and general pu