位置:首页 > IC中文资料第7218页 > ENN8179

型号 功能描述 生产厂家 企业 LOGO 操作
ENN8179

N-Channel and P-Channel Silicon MOSFETs General-Purpose Switching Device Applications

General-Purpose Switching Device Applications Features • The ECH8608 incorporates an N-channel MOSFET and a P-channel MOSFET that feature low ON-resistance and ultrahigh-speed switching, thereby enabling high-density mounting. • 2.5V drive.

SANYO

三洋

Vertical Deflection Booster For Slim CRTs

DESCRIPTION Designed for monitors and high performance TVs, the STV8179F vertical deflection booster can handle flyback voltages of up to 90V. In addition, it is possible to have a flyback voltage which is more than double that of the supply (Pin 2). This allows decreasing power consumption or

STMICROELECTRONICS

意法半导体

TV VERTICAL DEFLECTION BOOSTER

DESCRIPTION Designed for monitors and high performance TVs, the TDA8179FS vertical deflection booster is able to work with a flyback voltage more than the double of VS. The TDA8179FS operates with supplies up to 42V, flyback output up to 92V and provides up to 2App output current to drive to

STMICROELECTRONICS

意法半导体

TV VERTICAL DEFLECTION BOOSTER

DESCRIPTION Designed for monitors and high performance TVs, the TDA8179S vertical deflection booster delivers flyback voltages up to 90V. The TDA8179S operates with supplies up to 42V and provides up to 2App output current to drive to yoke. The TDA8179S is offered in HEPTAWATT package. ■ POWER

STMICROELECTRONICS

意法半导体

SILICON MMIC LOW CURRENT AMPLIFIER FOR MOBILE COMMUNICATIONS

DESCRIPTION The µPC8179TB is a silicon monolithic integrated circuit designed as amplifier for mobile communications. This IC can realize low current consumption with external chip inductor which can not be realized on internal 50 Ω wideband matched IC. This low current amplifier operates on 3.0

NEC

瑞萨

SILICON MMIC LOW CURRENT AMPLIFIER FOR MOBILE COMMUNICATIONS

DESCRIPTION The µPC8179TB is a silicon monolithic integrated circuit designed as amplifier for mobile communications. This IC can realize low current consumption with external chip inductor which can not be realized on internal 50 Ω wideband matched IC. This low current amplifier operates on 3.0

NEC

瑞萨

ENN8179产品属性

  • 类型

    描述

  • 型号

    ENN8179

  • 制造商

    SANYO

  • 制造商全称

    Sanyo Semicon Device

  • 功能描述

    N-Channel and P-Channel Silicon MOSFETs General-Purpose Switching Device Applications

ENN8179数据表相关新闻