型号 功能描述 生产厂家 企业 LOGO 操作

8 Megabit (1024K x 8-bit / 512K x 16-bit) Flash Memory

GENERAL DESCRIPTION The EN29LV800C is an 8-Megabit, electrically erasable, read/write non-volatile flash memory, organized as 1,048,576 bytes or 524,288 words. Any byte can be programmed typically in 8µs. The EN29LV800C features 3.0V voltage read and write operation, with access time as fast as 7

EON

宜扬科技

8 Megabit (1024K x 8-bit / 512K x 16-bit) Flash Memory

GENERAL DESCRIPTION The EN29LV800C is an 8-Megabit, electrically erasable, read/write non-volatile flash memory, organized as 1,048,576 bytes or 524,288 words. Any byte can be programmed typically in 8µs. The EN29LV800C features 3.0V voltage read and write operation, with access time as fast as 7

EON

宜扬科技

8 Megabit (1024K x 8-bit / 512K x 16-bit) Flash Memory

GENERAL DESCRIPTION The EN29LV800C is an 8-Megabit, electrically erasable, read/write non-volatile flash memory, organized as 1,048,576 bytes or 524,288 words. Any byte can be programmed typically in 8µs. The EN29LV800C features 3.0V voltage read and write operation, with access time as fast as 7

EON

宜扬科技

8 Megabit (1024K x 8-bit / 512K x 16-bit) Flash Memory

GENERAL DESCRIPTION The EN29LV800C is an 8-Megabit, electrically erasable, read/write non-volatile flash memory, organized as 1,048,576 bytes or 524,288 words. Any byte can be programmed typically in 8µs. The EN29LV800C features 3.0V voltage read and write operation, with access time as fast as 7

EON

宜扬科技

8 Megabit (1024K x 8-bit / 512K x 16-bit) Flash Memory Boot Sector Flash Memory, CMOS 3.0 Volt-only

文件:407.14 Kbytes Page:41 Pages

EON

宜扬科技

8 Megabit (1024K x 8-bit / 512K x 16-bit) Flash Memory Boot Sector Flash Memory, CMOS 3.0 Volt-only

文件:407.14 Kbytes Page:41 Pages

EON

宜扬科技

8 Megabit (1024K x 8-bit / 512K x 16-bit) Flash Memory Boot Sector Flash Memory, CMOS 3.0 Volt-only

文件:407.14 Kbytes Page:41 Pages

EON

宜扬科技

8 Megabit (1024K x 8-bit / 512K x 16-bit) Flash Memory Boot Sector Flash Memory, CMOS 3.0 Volt-only

文件:407.14 Kbytes Page:41 Pages

EON

宜扬科技

8M (1M x 8/512 K x 16) BIT

DESCRIPTION The MBM29LV800TE/BE are a 8 M-bit, 3.0 V-only Flash memory organized as 1 M bytes of 8 bits each or 512 Kwords of 16 bits each. The MBM29LV800TE/BE are offered in a 48-pin TSOP (1) , 48-pin CSOP and 48- ball FBGA package. These devices are designed to be programmed in a system with th

FUJITSU

富士通

8M (1M x 8/512 K x 16) BIT

DESCRIPTION The MBM29LV800TE/BE are a 8 M-bit, 3.0 V-only Flash memory organized as 1 M bytes of 8 bits each or 512 Kwords of 16 bits each. The MBM29LV800TE/BE are offered in a 48-pin TSOP (1) , 48-pin CSOP and 48- ball FBGA package. These devices are designed to be programmed in a system with th

FUJITSU

富士通

8 Megabit (1 M x 8-Bit/512 K x 16-Bit) CMOS 3.0 Volt-only Boot Sector Flash Memory

GENERAL DESCRIPTION The Am29LV800B is an 8 Mbit, 3.0 volt-only Flash memory organized as 1,048,576 bytes or 524,288 words. The device is offered in 48-ball FBGA, 44-pin SO, and 48-pin TSOP packages. The word-wide data (x16) appears on DQ15–DQ0; the byte-wide (x8) data appears on DQ7–DQ0. This dev

AMD

超威半导体

8 Megabit (1 M x 8-Bit/512 K x 16-Bit) CMOS 3.0 Volt-only Boot Sector Flash Memory

文件:1.56155 Mbytes Page:49 Pages

AMD

超威半导体

8 Megabit (1 M x 8-Bit/512 K x 16-Bit) CMOS 3.0 Volt-only, Boot Sector Flash Memory- Die Revision 2

文件:272.65 Kbytes Page:12 Pages

AMD

超威半导体

更新时间:2026-3-13 9:19:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
CFEON
1206+
BGA
93
原装现货
EON(CFE
24+
BGA
80000
只做自己库存 全新原装进口正品假一赔百 可开13%增
EON
23+24
BGA48
39820
原装正品优势渠道价格合理.可开13%增值税
CFEON
25+
BGA
880000
明嘉莱只做原装正品现货
EON
23+
BGA48
33828
##公司主营品牌长期供应100%原装现货可含税提供技术
EON
22+
BGA48
12245
现货,原厂原装假一罚十!
EON
24+
BGA48
9600
原装现货,优势供应,支持实单!
EOM
2223+
BGA48
26800
只做原装正品假一赔十为客户做到零风险
ESMT
21+
TFBGA-48
80000
全场通杀/十年存储/优质服务/正品追溯
EON
24+
QR
9800
一级代理/全新原装现货/长期供应!

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