型号 功能描述 生产厂家 企业 LOGO 操作

8 Megabit (1024K x 8-bit / 512K x 16-bit) Flash Memory

GENERAL DESCRIPTION The EN29LV800C is an 8-Megabit, electrically erasable, read/write non-volatile flash memory, organized as 1,048,576 bytes or 524,288 words. Any byte can be programmed typically in 8µs. The EN29LV800C features 3.0V voltage read and write operation, with access time as fast as 7

EON

宜扬科技

8 Megabit (1024K x 8-bit / 512K x 16-bit) Flash Memory

GENERAL DESCRIPTION The EN29LV800C is an 8-Megabit, electrically erasable, read/write non-volatile flash memory, organized as 1,048,576 bytes or 524,288 words. Any byte can be programmed typically in 8µs. The EN29LV800C features 3.0V voltage read and write operation, with access time as fast as 7

EON

宜扬科技

8 Megabit (1024K x 8-bit / 512K x 16-bit) Flash Memory

GENERAL DESCRIPTION The EN29LV800C is an 8-Megabit, electrically erasable, read/write non-volatile flash memory, organized as 1,048,576 bytes or 524,288 words. Any byte can be programmed typically in 8µs. The EN29LV800C features 3.0V voltage read and write operation, with access time as fast as 7

EON

宜扬科技

8 Megabit (1024K x 8-bit / 512K x 16-bit) Flash Memory

GENERAL DESCRIPTION The EN29LV800C is an 8-Megabit, electrically erasable, read/write non-volatile flash memory, organized as 1,048,576 bytes or 524,288 words. Any byte can be programmed typically in 8µs. The EN29LV800C features 3.0V voltage read and write operation, with access time as fast as 7

EON

宜扬科技

8 Megabit (1024K x 8-bit / 512K x 16-bit) Flash Memory Boot Sector Flash Memory, CMOS 3.0 Volt-only

文件:407.14 Kbytes Page:41 Pages

EON

宜扬科技

8 Megabit (1024K x 8-bit / 512K x 16-bit) Flash Memory Boot Sector Flash Memory, CMOS 3.0 Volt-only

文件:407.14 Kbytes Page:41 Pages

EON

宜扬科技

8 Megabit (1024K x 8-bit / 512K x 16-bit) Flash Memory Boot Sector Flash Memory, CMOS 3.0 Volt-only

文件:407.14 Kbytes Page:41 Pages

EON

宜扬科技

8 Megabit (1024K x 8-bit / 512K x 16-bit) Flash Memory Boot Sector Flash Memory, CMOS 3.0 Volt-only

文件:407.14 Kbytes Page:41 Pages

EON

宜扬科技

8M (1M x 8/512 K x 16) BIT

DESCRIPTION The MBM29LV800TE/BE are a 8 M-bit, 3.0 V-only Flash memory organized as 1 M bytes of 8 bits each or 512 Kwords of 16 bits each. The MBM29LV800TE/BE are offered in a 48-pin TSOP (1) , 48-pin CSOP and 48- ball FBGA package. These devices are designed to be programmed in a system with th

Fujitsu

富士通

8M (1M x 8/512 K x 16) BIT

DESCRIPTION The MBM29LV800TE/BE are a 8 M-bit, 3.0 V-only Flash memory organized as 1 M bytes of 8 bits each or 512 Kwords of 16 bits each. The MBM29LV800TE/BE are offered in a 48-pin TSOP (1) , 48-pin CSOP and 48- ball FBGA package. These devices are designed to be programmed in a system with th

Fujitsu

富士通

8 Megabit (1 M x 8-Bit/512 K x 16-Bit) CMOS 3.0 Volt-only Boot Sector Flash Memory

GENERAL DESCRIPTION The Am29LV800B is an 8 Mbit, 3.0 volt-only Flash memory organized as 1,048,576 bytes or 524,288 words. The device is offered in 48-ball FBGA, 44-pin SO, and 48-pin TSOP packages. The word-wide data (x16) appears on DQ15–DQ0; the byte-wide (x8) data appears on DQ7–DQ0. This dev

AMD

超威半导体

8 Megabit (1 M x 8-Bit/512 K x 16-Bit) CMOS 3.0 Volt-only Boot Sector Flash Memory

文件:1.56155 Mbytes Page:49 Pages

AMD

超威半导体

8 Megabit (1 M x 8-Bit/512 K x 16-Bit) CMOS 3.0 Volt-only, Boot Sector Flash Memory- Die Revision 2

文件:272.65 Kbytes Page:12 Pages

AMD

超威半导体

更新时间:2025-12-28 23:01:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
CFEON
24+
NA/
999
优势代理渠道,原装正品,可全系列订货开增值税票
EON
2016+
BGA48
3094
公司只做原装,假一罚十,可开17%增值税发票!
EON(CFE
24+
BGA
80000
只做自己库存 全新原装进口正品假一赔百 可开13%增
EOM
2023+
BGA48
6893
专注全新正品,优势现货供应
ESMT
25+
TFBGA-48
65248
百分百原装现货 实单必成
EON
24+
QR
9800
一级代理/全新原装现货/长期供应!
EON/宜扬
24+
BGA
7850
只做原装正品现货或订货假一赔十!
CFEON
25+
BGA
880000
明嘉莱只做原装正品现货
CFEON
2025+
BGA
3500
原装进口价格优 请找坤融电子!
EONCFEON
17+
BGA
6200
100%原装正品现货

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