位置：首页 > IC中文资料 > EN29LV800CB-70TI
| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
EN29LV800CB-70TI | 8 Megabit (1024K x 8-bit / 512K x 16-bit) Flash Memory GENERAL DESCRIPTION The EN29LV800C is an 8-Megabit, electrically erasable, read/write non-volatile flash memory, organized as 1,048,576 bytes or 524,288 words. Any byte can be programmed typically in 8µs. The EN29LV800C features 3.0V voltage read and write operation, with access time as fast as 7 | EON 宜扬科技 |   | |
8 Megabit (1024K x 8-bit / 512K x 16-bit) Flash Memory GENERAL DESCRIPTION The EN29LV800C is an 8-Megabit, electrically erasable, read/write non-volatile flash memory, organized as 1,048,576 bytes or 524,288 words. Any byte can be programmed typically in 8µs. The EN29LV800C features 3.0V voltage read and write operation, with access time as fast as 7 | EON 宜扬科技 | | ||
8 Megabit (1024K x 8-bit / 512K x 16-bit) Flash Memory Boot Sector Flash Memory, CMOS 3.0 Volt-only 文件：407.14 Kbytes Page：41 Pages | EON 宜扬科技 | | ||
8 Megabit (1024K x 8-bit / 512K x 16-bit) Flash Memory GENERAL DESCRIPTION The EN29LV800C is an 8-Megabit, electrically erasable, read/write non-volatile flash memory, organized as 1,048,576 bytes or 524,288 words. Any byte can be programmed typically in 8µs. The EN29LV800C features 3.0V voltage read and write operation, with access time as fast as 7 | EON 宜扬科技 | | ||
8 Megabit (1024K x 8-bit / 512K x 16-bit) Flash Memory GENERAL DESCRIPTION The EN29LV800C is an 8-Megabit, electrically erasable, read/write non-volatile flash memory, organized as 1,048,576 bytes or 524,288 words. Any byte can be programmed typically in 8µs. The EN29LV800C features 3.0V voltage read and write operation, with access time as fast as 7 | EON 宜扬科技 | | ||
8 Megabit (1024K x 8-bit / 512K x 16-bit) Flash Memory Boot Sector Flash Memory, CMOS 3.0 Volt-only 文件：407.14 Kbytes Page：41 Pages | EON 宜扬科技 | | ||
8 Megabit (1024K x 8-bit / 512K x 16-bit) Flash Memory Boot Sector Flash Memory, CMOS 3.0 Volt-only 文件：407.14 Kbytes Page：41 Pages | EON 宜扬科技 | | ||
8 Megabit (1024K x 8-bit / 512K x 16-bit) Flash Memory Boot Sector Flash Memory, CMOS 3.0 Volt-only 文件：407.14 Kbytes Page：41 Pages | EON 宜扬科技 | |
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
CFEON |
25+ |
TSSOP48 |
27220 |
CFEON全新特价EN29LV800CB-70TIP即刻询购立享优惠#长期有货 |
|||
EON |
24+ |
NA/ |
368 |
优势代理渠道,原装正品,可全系列订货开增值税票 |
|||
EON/宜扬 |
25+ |
TSOP |
65248 |
百分百原装现货 实单必成 |
|||
CFEON |
24+ |
TSOP |
20000 |
全新原厂原装，进口正品现货，正规渠道可含税！！ |
|||
CFEON |
1223+ |
TSOP |
684 |
一级代理,专注军工、汽车、医疗、工业、新能源、电力 |
|||
CFEON |
23+ |
TSOP48 |
33829 |
##公司主营品牌长期供应100%原装现货可含税提供技术 |
|||
ESMT |
24+ |
TSOP-48 |
80000 |
原装现货 |
|||
EON |
24+ |
TSOP48 |
9800 |
全新进口原装现货假一罚十 |
|||
CFEON |
23+ |
TSOP |
25000 |
代理原装现货,假一赔十 |
|||
CFEON |
25+ |
TSOP48 |
880000 |
明嘉莱只做原装正品现货 |
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EN29LV800CB-70TI规格书下载地址
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EN29LV800CB-70TI数据表相关新闻
EN5311QI
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2023-5-26EN5311QI
製造商: Intel 產品類型: 轉換電壓穩壓器 RoHS: 詳細資料 安裝風格: SMD/SMT 封裝/外殼: QFN-20 輸出電壓: 600 mV to 6 V 輸出電流: 1 A 輸出數: 1 Output 最高輸入電壓: 6.6 V 拓撲學: Buck 輸入電壓 最小: 2.4 V 交換頻率: 4 MHz 最低工作溫度: - 40 C 最高工作溫度: + 85 C 系列: EN53xx
2020-10-27EN25QH32B-104HIP
EN25QH32B-104HIP，全新原装当天发货或门市自取0755-82732291.
2019-10-26EN25QH16-104HIP
EN25QH16-104HIP，全新原装当天发货或门市自取0755-82732291.
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2019-10-26
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