型号 功能描述 生产厂家 企业 LOGO 操作
EN29LV800C

8 Megabit (1024K x 8-bit / 512K x 16-bit) Flash Memory

GENERAL DESCRIPTION The EN29LV800C is an 8-Megabit, electrically erasable, read/write non-volatile flash memory, organized as 1,048,576 bytes or 524,288 words. Any byte can be programmed typically in 8µs. The EN29LV800C features 3.0V voltage read and write operation, with access time as fast as 7

EON

宜扬科技

EN29LV800C

Parallel NOR Flash

ESMTElite Semiconductor Memory Technology Inc.

晶豪科技晶豪科技股份有限公司

8 Megabit (1024K x 8-bit / 512K x 16-bit) Flash Memory

GENERAL DESCRIPTION The EN29LV800C is an 8-Megabit, electrically erasable, read/write non-volatile flash memory, organized as 1,048,576 bytes or 524,288 words. Any byte can be programmed typically in 8µs. The EN29LV800C features 3.0V voltage read and write operation, with access time as fast as 7

EON

宜扬科技

8 Megabit (1024K x 8-bit / 512K x 16-bit) Flash Memory

GENERAL DESCRIPTION The EN29LV800C is an 8-Megabit, electrically erasable, read/write non-volatile flash memory, organized as 1,048,576 bytes or 524,288 words. Any byte can be programmed typically in 8µs. The EN29LV800C features 3.0V voltage read and write operation, with access time as fast as 7

EON

宜扬科技

8 Megabit (1024K x 8-bit / 512K x 16-bit) Flash Memory

GENERAL DESCRIPTION The EN29LV800C is an 8-Megabit, electrically erasable, read/write non-volatile flash memory, organized as 1,048,576 bytes or 524,288 words. Any byte can be programmed typically in 8µs. The EN29LV800C features 3.0V voltage read and write operation, with access time as fast as 7

EON

宜扬科技

8 Megabit (1024K x 8-bit / 512K x 16-bit) Flash Memory

GENERAL DESCRIPTION The EN29LV800C is an 8-Megabit, electrically erasable, read/write non-volatile flash memory, organized as 1,048,576 bytes or 524,288 words. Any byte can be programmed typically in 8µs. The EN29LV800C features 3.0V voltage read and write operation, with access time as fast as 7

EON

宜扬科技

8 Megabit (1024K x 8-bit / 512K x 16-bit) Flash Memory

GENERAL DESCRIPTION The EN29LV800C is an 8-Megabit, electrically erasable, read/write non-volatile flash memory, organized as 1,048,576 bytes or 524,288 words. Any byte can be programmed typically in 8µs. The EN29LV800C features 3.0V voltage read and write operation, with access time as fast as 7

EON

宜扬科技

8 Megabit (1024K x 8-bit / 512K x 16-bit) Flash Memory

GENERAL DESCRIPTION The EN29LV800C is an 8-Megabit, electrically erasable, read/write non-volatile flash memory, organized as 1,048,576 bytes or 524,288 words. Any byte can be programmed typically in 8µs. The EN29LV800C features 3.0V voltage read and write operation, with access time as fast as 7

EON

宜扬科技

8 Megabit (1024K x 8-bit / 512K x 16-bit) Flash Memory

GENERAL DESCRIPTION The EN29LV800C is an 8-Megabit, electrically erasable, read/write non-volatile flash memory, organized as 1,048,576 bytes or 524,288 words. Any byte can be programmed typically in 8µs. The EN29LV800C features 3.0V voltage read and write operation, with access time as fast as 7

EON

宜扬科技

8 Megabit (1024K x 8-bit / 512K x 16-bit) Flash Memory

GENERAL DESCRIPTION The EN29LV800C is an 8-Megabit, electrically erasable, read/write non-volatile flash memory, organized as 1,048,576 bytes or 524,288 words. Any byte can be programmed typically in 8µs. The EN29LV800C features 3.0V voltage read and write operation, with access time as fast as 7

EON

宜扬科技

8 Megabit (1024K x 8-bit / 512K x 16-bit) Flash Memory Boot Sector Flash Memory, CMOS 3.0 Volt-only

文件:407.14 Kbytes Page:41 Pages

EON

宜扬科技

8 Megabit (1024K x 8-bit / 512K x 16-bit) Flash Memory Boot Sector Flash Memory, CMOS 3.0 Volt-only

文件:407.14 Kbytes Page:41 Pages

EON

宜扬科技

8 Megabit (1024K x 8-bit / 512K x 16-bit) Flash Memory Boot Sector Flash Memory, CMOS 3.0 Volt-only

文件:407.14 Kbytes Page:41 Pages

EON

宜扬科技

8 Megabit (1024K x 8-bit / 512K x 16-bit) Flash Memory Boot Sector Flash Memory, CMOS 3.0 Volt-only

文件:407.14 Kbytes Page:41 Pages

EON

宜扬科技

8 Megabit (1024K x 8-bit / 512K x 16-bit) Flash Memory Boot Sector Flash Memory, CMOS 3.0 Volt-only

文件:407.14 Kbytes Page:41 Pages

EON

宜扬科技

8 Megabit (1024K x 8-bit / 512K x 16-bit) Flash Memory Boot Sector Flash Memory, CMOS 3.0 Volt-only

文件:407.14 Kbytes Page:41 Pages

EON

宜扬科技

8 Megabit (1024K x 8-bit / 512K x 16-bit) Flash Memory Boot Sector Flash Memory, CMOS 3.0 Volt-only

文件:407.14 Kbytes Page:41 Pages

EON

宜扬科技

8 Megabit (1024K x 8-bit / 512K x 16-bit) Flash Memory Boot Sector Flash Memory, CMOS 3.0 Volt-only

文件:407.14 Kbytes Page:41 Pages

EON

宜扬科技

8 Megabit (1024K x 8-bit / 512K x 16-bit) Flash Memory Boot Sector Flash Memory, CMOS 3.0 Volt-only

文件:407.14 Kbytes Page:41 Pages

EON

宜扬科技

8M (1M x 8/512 K x 16) BIT

DESCRIPTION The MBM29LV800TE/BE are a 8 M-bit, 3.0 V-only Flash memory organized as 1 M bytes of 8 bits each or 512 Kwords of 16 bits each. The MBM29LV800TE/BE are offered in a 48-pin TSOP (1) , 48-pin CSOP and 48- ball FBGA package. These devices are designed to be programmed in a system with th

Fujitsu

富士通

8M (1M x 8/512 K x 16) BIT

DESCRIPTION The MBM29LV800TE/BE are a 8 M-bit, 3.0 V-only Flash memory organized as 1 M bytes of 8 bits each or 512 Kwords of 16 bits each. The MBM29LV800TE/BE are offered in a 48-pin TSOP (1) , 48-pin CSOP and 48- ball FBGA package. These devices are designed to be programmed in a system with th

Fujitsu

富士通

8 Megabit (1 M x 8-Bit/512 K x 16-Bit) CMOS 3.0 Volt-only Boot Sector Flash Memory

GENERAL DESCRIPTION The Am29LV800B is an 8 Mbit, 3.0 volt-only Flash memory organized as 1,048,576 bytes or 524,288 words. The device is offered in 48-ball FBGA, 44-pin SO, and 48-pin TSOP packages. The word-wide data (x16) appears on DQ15–DQ0; the byte-wide (x8) data appears on DQ7–DQ0. This dev

AMD

超威半导体

8 Megabit (1 M x 8-Bit/512 K x 16-Bit) CMOS 3.0 Volt-only Boot Sector Flash Memory

文件:1.56155 Mbytes Page:49 Pages

AMD

超威半导体

8 Megabit (1 M x 8-Bit/512 K x 16-Bit) CMOS 3.0 Volt-only, Boot Sector Flash Memory- Die Revision 2

文件:272.65 Kbytes Page:12 Pages

AMD

超威半导体

EN29LV800C产品属性

  • 类型

    描述

  • 型号

    EN29LV800C

  • 制造商

    EON SILICON SOLUTION INC

  • 功能描述

    8mb TSOP 70ns nor flash

更新时间:2025-12-30 18:31:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
CFEON
25+
TSSOP48
27220
CFEON全新特价EN29LV800CB-70TIP即刻询购立享优惠#长期有货
EON
2025+
TSOP48
3550
全新原厂原装产品、公司现货销售
EON
22+
BGA48
12245
现货,原厂原装假一罚十!
EON
24+
TSOP48
9800
全新进口原装现货假一罚十
ESMT
24+
TFBGA-48
80000
原装现货
CFEON
24+
NA/
8479
优势代理渠道,原装正品,可全系列订货开增值税票
CFEON
2023+
BGA
2205
专注全新正品,优势现货供应
EON
25+
TSOP48
18600
百分百原装正品 真实公司现货库存 本公司只做原装 可
EOM
2223+
BGA48
26800
只做原装正品假一赔十为客户做到零风险
原装EON
TSOP48
15620
一级代理 原装正品假一罚十价格优势长期供货

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