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EN29LV160价格

参考价格：￥5.0815

型号：EN29LV160CB-70TIP 品牌：EON SILICON SOLUTION INC 备注：这里有EN29LV160多少钱，2025年最近7天走势，今日出价，今日竞价，EN29LV160批发/采购报价，EN29LV160行情走势销售排行榜，EN29LV160报价。

型号	功能描述	生产厂家企业	LOGO
EN29LV160	16 Megabit (2048K x 8-bit / 1024K x 16-bit) Flash Memory Boot Sector Flash Memory, CMOS 3.0 Volt-only GENERAL DESCRIPTION The EN29LV160 is a 16-Megabit, electrically erasable, read/write non-volatile flash memory, organized as 2,097,152 bytes or 1,048,576 words. Any byte can be programmed typically in 8µs. The EN29LV160 features 3.0V voltage read and write operation, with access times as fast a	EON 宜扬科技	EON
EN29LV160	16 Megabit (2048K x 8-bit / 1024K x 16-bit) Flash Memory Boot Sector Flash Memory, CMOS 3.0 Volt-only	ESMTElite Semiconductor Memory Technology Inc. 晶豪科技晶豪科技股份有限公司	ESMT
EN29LV160A	16 MEGABIT (2048K X 8- BIT / 1024 K X 16-BIT) FLASH MEMORY GENERAL DESCRIPTION The EN29LV160A is a 16-Megabit, electrically erasable, read/write non-volatile flash memory, organized as 2,097,152 bytes or 1,048,576 words. Any byte can be programmed typically in 8µs. The EN29LV160A features 3.0V voltage read and write operation, with access times as fast	EON 宜扬科技	EON
EN29LV160AB-70BC	16 MEGABIT (2048K X 8- BIT / 1024 K X 16-BIT) FLASH MEMORY GENERAL DESCRIPTION The EN29LV160A is a 16-Megabit, electrically erasable, read/write non-volatile flash memory, organized as 2,097,152 bytes or 1,048,576 words. Any byte can be programmed typically in 8µs. The EN29LV160A features 3.0V voltage read and write operation, with access times as fast	EON 宜扬科技	EON
EN29LV160AB-70BCP	16 MEGABIT (2048K X 8- BIT / 1024 K X 16-BIT) FLASH MEMORY GENERAL DESCRIPTION The EN29LV160A is a 16-Megabit, electrically erasable, read/write non-volatile flash memory, organized as 2,097,152 bytes or 1,048,576 words. Any byte can be programmed typically in 8µs. The EN29LV160A features 3.0V voltage read and write operation, with access times as fast	EON 宜扬科技	EON
EN29LV160AB-70BI	16 MEGABIT (2048K X 8- BIT / 1024 K X 16-BIT) FLASH MEMORY GENERAL DESCRIPTION The EN29LV160A is a 16-Megabit, electrically erasable, read/write non-volatile flash memory, organized as 2,097,152 bytes or 1,048,576 words. Any byte can be programmed typically in 8µs. The EN29LV160A features 3.0V voltage read and write operation, with access times as fast	EON 宜扬科技	EON
EN29LV160AB-70BIP	16 MEGABIT (2048K X 8- BIT / 1024 K X 16-BIT) FLASH MEMORY GENERAL DESCRIPTION The EN29LV160A is a 16-Megabit, electrically erasable, read/write non-volatile flash memory, organized as 2,097,152 bytes or 1,048,576 words. Any byte can be programmed typically in 8µs. The EN29LV160A features 3.0V voltage read and write operation, with access times as fast	EON 宜扬科技	EON
EN29LV160AB-70TC	16 MEGABIT (2048K X 8- BIT / 1024 K X 16-BIT) FLASH MEMORY GENERAL DESCRIPTION The EN29LV160A is a 16-Megabit, electrically erasable, read/write non-volatile flash memory, organized as 2,097,152 bytes or 1,048,576 words. Any byte can be programmed typically in 8µs. The EN29LV160A features 3.0V voltage read and write operation, with access times as fast	EON 宜扬科技	EON
EN29LV160AB-70TCP	16 MEGABIT (2048K X 8- BIT / 1024 K X 16-BIT) FLASH MEMORY GENERAL DESCRIPTION The EN29LV160A is a 16-Megabit, electrically erasable, read/write non-volatile flash memory, organized as 2,097,152 bytes or 1,048,576 words. Any byte can be programmed typically in 8µs. The EN29LV160A features 3.0V voltage read and write operation, with access times as fast	EON 宜扬科技	EON
EN29LV160AB-70TI	16 MEGABIT (2048K X 8- BIT / 1024 K X 16-BIT) FLASH MEMORY GENERAL DESCRIPTION The EN29LV160A is a 16-Megabit, electrically erasable, read/write non-volatile flash memory, organized as 2,097,152 bytes or 1,048,576 words. Any byte can be programmed typically in 8µs. The EN29LV160A features 3.0V voltage read and write operation, with access times as fast	EON 宜扬科技	EON
EN29LV160AB-70TIP	16 MEGABIT (2048K X 8- BIT / 1024 K X 16-BIT) FLASH MEMORY GENERAL DESCRIPTION The EN29LV160A is a 16-Megabit, electrically erasable, read/write non-volatile flash memory, organized as 2,097,152 bytes or 1,048,576 words. Any byte can be programmed typically in 8µs. The EN29LV160A features 3.0V voltage read and write operation, with access times as fast	EON 宜扬科技	EON
EN29LV160AB-90BC	16 MEGABIT (2048K X 8- BIT / 1024 K X 16-BIT) FLASH MEMORY GENERAL DESCRIPTION The EN29LV160A is a 16-Megabit, electrically erasable, read/write non-volatile flash memory, organized as 2,097,152 bytes or 1,048,576 words. Any byte can be programmed typically in 8µs. The EN29LV160A features 3.0V voltage read and write operation, with access times as fast	EON 宜扬科技	EON
EN29LV160AB-90BCP	16 MEGABIT (2048K X 8- BIT / 1024 K X 16-BIT) FLASH MEMORY GENERAL DESCRIPTION The EN29LV160A is a 16-Megabit, electrically erasable, read/write non-volatile flash memory, organized as 2,097,152 bytes or 1,048,576 words. Any byte can be programmed typically in 8µs. The EN29LV160A features 3.0V voltage read and write operation, with access times as fast	EON 宜扬科技	EON
EN29LV160AB-90BI	16 MEGABIT (2048K X 8- BIT / 1024 K X 16-BIT) FLASH MEMORY GENERAL DESCRIPTION The EN29LV160A is a 16-Megabit, electrically erasable, read/write non-volatile flash memory, organized as 2,097,152 bytes or 1,048,576 words. Any byte can be programmed typically in 8µs. The EN29LV160A features 3.0V voltage read and write operation, with access times as fast	EON 宜扬科技	EON
EN29LV160AB-90BIP	16 MEGABIT (2048K X 8- BIT / 1024 K X 16-BIT) FLASH MEMORY GENERAL DESCRIPTION The EN29LV160A is a 16-Megabit, electrically erasable, read/write non-volatile flash memory, organized as 2,097,152 bytes or 1,048,576 words. Any byte can be programmed typically in 8µs. The EN29LV160A features 3.0V voltage read and write operation, with access times as fast	EON 宜扬科技	EON
EN29LV160AB-90TC	16 MEGABIT (2048K X 8- BIT / 1024 K X 16-BIT) FLASH MEMORY GENERAL DESCRIPTION The EN29LV160A is a 16-Megabit, electrically erasable, read/write non-volatile flash memory, organized as 2,097,152 bytes or 1,048,576 words. Any byte can be programmed typically in 8µs. The EN29LV160A features 3.0V voltage read and write operation, with access times as fast	EON 宜扬科技	EON
EN29LV160AB-90TCP	16 MEGABIT (2048K X 8- BIT / 1024 K X 16-BIT) FLASH MEMORY GENERAL DESCRIPTION The EN29LV160A is a 16-Megabit, electrically erasable, read/write non-volatile flash memory, organized as 2,097,152 bytes or 1,048,576 words. Any byte can be programmed typically in 8µs. The EN29LV160A features 3.0V voltage read and write operation, with access times as fast	EON 宜扬科技	EON
EN29LV160AB-90TI	16 MEGABIT (2048K X 8- BIT / 1024 K X 16-BIT) FLASH MEMORY GENERAL DESCRIPTION The EN29LV160A is a 16-Megabit, electrically erasable, read/write non-volatile flash memory, organized as 2,097,152 bytes or 1,048,576 words. Any byte can be programmed typically in 8µs. The EN29LV160A features 3.0V voltage read and write operation, with access times as fast	EON 宜扬科技	EON
EN29LV160AB-90TIP	16 MEGABIT (2048K X 8- BIT / 1024 K X 16-BIT) FLASH MEMORY GENERAL DESCRIPTION The EN29LV160A is a 16-Megabit, electrically erasable, read/write non-volatile flash memory, organized as 2,097,152 bytes or 1,048,576 words. Any byte can be programmed typically in 8µs. The EN29LV160A features 3.0V voltage read and write operation, with access times as fast	EON 宜扬科技	EON
EN29LV160AT-70BC	16 MEGABIT (2048K X 8- BIT / 1024 K X 16-BIT) FLASH MEMORY GENERAL DESCRIPTION The EN29LV160A is a 16-Megabit, electrically erasable, read/write non-volatile flash memory, organized as 2,097,152 bytes or 1,048,576 words. Any byte can be programmed typically in 8µs. The EN29LV160A features 3.0V voltage read and write operation, with access times as fast	EON 宜扬科技	EON
EN29LV160AT-70BCP	16 MEGABIT (2048K X 8- BIT / 1024 K X 16-BIT) FLASH MEMORY GENERAL DESCRIPTION The EN29LV160A is a 16-Megabit, electrically erasable, read/write non-volatile flash memory, organized as 2,097,152 bytes or 1,048,576 words. Any byte can be programmed typically in 8µs. The EN29LV160A features 3.0V voltage read and write operation, with access times as fast	EON 宜扬科技	EON
EN29LV160AT-70BI	16 MEGABIT (2048K X 8- BIT / 1024 K X 16-BIT) FLASH MEMORY GENERAL DESCRIPTION The EN29LV160A is a 16-Megabit, electrically erasable, read/write non-volatile flash memory, organized as 2,097,152 bytes or 1,048,576 words. Any byte can be programmed typically in 8µs. The EN29LV160A features 3.0V voltage read and write operation, with access times as fast	EON 宜扬科技	EON
EN29LV160AT-70BIP	16 MEGABIT (2048K X 8- BIT / 1024 K X 16-BIT) FLASH MEMORY GENERAL DESCRIPTION The EN29LV160A is a 16-Megabit, electrically erasable, read/write non-volatile flash memory, organized as 2,097,152 bytes or 1,048,576 words. Any byte can be programmed typically in 8µs. The EN29LV160A features 3.0V voltage read and write operation, with access times as fast	EON 宜扬科技	EON
EN29LV160AT-70TC	16 MEGABIT (2048K X 8- BIT / 1024 K X 16-BIT) FLASH MEMORY GENERAL DESCRIPTION The EN29LV160A is a 16-Megabit, electrically erasable, read/write non-volatile flash memory, organized as 2,097,152 bytes or 1,048,576 words. Any byte can be programmed typically in 8µs. The EN29LV160A features 3.0V voltage read and write operation, with access times as fast	EON 宜扬科技	EON
EN29LV160AT-70TCP	16 MEGABIT (2048K X 8- BIT / 1024 K X 16-BIT) FLASH MEMORY GENERAL DESCRIPTION The EN29LV160A is a 16-Megabit, electrically erasable, read/write non-volatile flash memory, organized as 2,097,152 bytes or 1,048,576 words. Any byte can be programmed typically in 8µs. The EN29LV160A features 3.0V voltage read and write operation, with access times as fast	EON 宜扬科技	EON
EN29LV160AT-70TI	16 MEGABIT (2048K X 8- BIT / 1024 K X 16-BIT) FLASH MEMORY GENERAL DESCRIPTION The EN29LV160A is a 16-Megabit, electrically erasable, read/write non-volatile flash memory, organized as 2,097,152 bytes or 1,048,576 words. Any byte can be programmed typically in 8µs. The EN29LV160A features 3.0V voltage read and write operation, with access times as fast	EON 宜扬科技	EON
EN29LV160AT-70TIP	16 MEGABIT (2048K X 8- BIT / 1024 K X 16-BIT) FLASH MEMORY GENERAL DESCRIPTION The EN29LV160A is a 16-Megabit, electrically erasable, read/write non-volatile flash memory, organized as 2,097,152 bytes or 1,048,576 words. Any byte can be programmed typically in 8µs. The EN29LV160A features 3.0V voltage read and write operation, with access times as fast	EON 宜扬科技	EON
EN29LV160AT-90BC	16 MEGABIT (2048K X 8- BIT / 1024 K X 16-BIT) FLASH MEMORY GENERAL DESCRIPTION The EN29LV160A is a 16-Megabit, electrically erasable, read/write non-volatile flash memory, organized as 2,097,152 bytes or 1,048,576 words. Any byte can be programmed typically in 8µs. The EN29LV160A features 3.0V voltage read and write operation, with access times as fast	EON 宜扬科技	EON
EN29LV160AT-90BCP	16 MEGABIT (2048K X 8- BIT / 1024 K X 16-BIT) FLASH MEMORY GENERAL DESCRIPTION The EN29LV160A is a 16-Megabit, electrically erasable, read/write non-volatile flash memory, organized as 2,097,152 bytes or 1,048,576 words. Any byte can be programmed typically in 8µs. The EN29LV160A features 3.0V voltage read and write operation, with access times as fast	EON 宜扬科技	EON
EN29LV160AT-90BI	16 MEGABIT (2048K X 8- BIT / 1024 K X 16-BIT) FLASH MEMORY GENERAL DESCRIPTION The EN29LV160A is a 16-Megabit, electrically erasable, read/write non-volatile flash memory, organized as 2,097,152 bytes or 1,048,576 words. Any byte can be programmed typically in 8µs. The EN29LV160A features 3.0V voltage read and write operation, with access times as fast	EON 宜扬科技	EON
EN29LV160AT-90BIP	16 MEGABIT (2048K X 8- BIT / 1024 K X 16-BIT) FLASH MEMORY GENERAL DESCRIPTION The EN29LV160A is a 16-Megabit, electrically erasable, read/write non-volatile flash memory, organized as 2,097,152 bytes or 1,048,576 words. Any byte can be programmed typically in 8µs. The EN29LV160A features 3.0V voltage read and write operation, with access times as fast	EON 宜扬科技	EON
EN29LV160AT-90TC	16 MEGABIT (2048K X 8- BIT / 1024 K X 16-BIT) FLASH MEMORY GENERAL DESCRIPTION The EN29LV160A is a 16-Megabit, electrically erasable, read/write non-volatile flash memory, organized as 2,097,152 bytes or 1,048,576 words. Any byte can be programmed typically in 8µs. The EN29LV160A features 3.0V voltage read and write operation, with access times as fast	EON 宜扬科技	EON
EN29LV160AT-90TCP	16 MEGABIT (2048K X 8- BIT / 1024 K X 16-BIT) FLASH MEMORY GENERAL DESCRIPTION The EN29LV160A is a 16-Megabit, electrically erasable, read/write non-volatile flash memory, organized as 2,097,152 bytes or 1,048,576 words. Any byte can be programmed typically in 8µs. The EN29LV160A features 3.0V voltage read and write operation, with access times as fast	EON 宜扬科技	EON
EN29LV160AT-90TI	16 MEGABIT (2048K X 8- BIT / 1024 K X 16-BIT) FLASH MEMORY GENERAL DESCRIPTION The EN29LV160A is a 16-Megabit, electrically erasable, read/write non-volatile flash memory, organized as 2,097,152 bytes or 1,048,576 words. Any byte can be programmed typically in 8µs. The EN29LV160A features 3.0V voltage read and write operation, with access times as fast	EON 宜扬科技	EON
EN29LV160AT-90TIP	16 MEGABIT (2048K X 8- BIT / 1024 K X 16-BIT) FLASH MEMORY GENERAL DESCRIPTION The EN29LV160A is a 16-Megabit, electrically erasable, read/write non-volatile flash memory, organized as 2,097,152 bytes or 1,048,576 words. Any byte can be programmed typically in 8µs. The EN29LV160A features 3.0V voltage read and write operation, with access times as fast	EON 宜扬科技	EON
EN29LV160B-70B	16 Megabit (2048K x 8-bit / 1024K x 16-bit) Flash Memory Boot Sector Flash Memory, CMOS 3.0 Volt-only GENERAL DESCRIPTION The EN29LV160 is a 16-Megabit, electrically erasable, read/write non-volatile flash memory, organized as 2,097,152 bytes or 1,048,576 words. Any byte can be programmed typically in 8µs. The EN29LV160 features 3.0V voltage read and write operation, with access times as fast a	EON 宜扬科技	EON
EN29LV160B-70BI	16 Megabit (2048K x 8-bit / 1024K x 16-bit) Flash Memory Boot Sector Flash Memory, CMOS 3.0 Volt-only GENERAL DESCRIPTION The EN29LV160 is a 16-Megabit, electrically erasable, read/write non-volatile flash memory, organized as 2,097,152 bytes or 1,048,576 words. Any byte can be programmed typically in 8µs. The EN29LV160 features 3.0V voltage read and write operation, with access times as fast a	EON 宜扬科技	EON
EN29LV160B-70BIP	16 Megabit (2048K x 8-bit / 1024K x 16-bit) Flash Memory Boot Sector Flash Memory, CMOS 3.0 Volt-only GENERAL DESCRIPTION The EN29LV160 is a 16-Megabit, electrically erasable, read/write non-volatile flash memory, organized as 2,097,152 bytes or 1,048,576 words. Any byte can be programmed typically in 8µs. The EN29LV160 features 3.0V voltage read and write operation, with access times as fast a	EON 宜扬科技	EON
EN29LV160B-70BP	16 Megabit (2048K x 8-bit / 1024K x 16-bit) Flash Memory Boot Sector Flash Memory, CMOS 3.0 Volt-only GENERAL DESCRIPTION The EN29LV160 is a 16-Megabit, electrically erasable, read/write non-volatile flash memory, organized as 2,097,152 bytes or 1,048,576 words. Any byte can be programmed typically in 8µs. The EN29LV160 features 3.0V voltage read and write operation, with access times as fast a	EON 宜扬科技	EON
EN29LV160B-70T	16 Megabit (2048K x 8-bit / 1024K x 16-bit) Flash Memory Boot Sector Flash Memory, CMOS 3.0 Volt-only GENERAL DESCRIPTION The EN29LV160 is a 16-Megabit, electrically erasable, read/write non-volatile flash memory, organized as 2,097,152 bytes or 1,048,576 words. Any byte can be programmed typically in 8µs. The EN29LV160 features 3.0V voltage read and write operation, with access times as fast a	EON 宜扬科技	EON
EN29LV160B-70TI	16 Megabit (2048K x 8-bit / 1024K x 16-bit) Flash Memory Boot Sector Flash Memory, CMOS 3.0 Volt-only GENERAL DESCRIPTION The EN29LV160 is a 16-Megabit, electrically erasable, read/write non-volatile flash memory, organized as 2,097,152 bytes or 1,048,576 words. Any byte can be programmed typically in 8µs. The EN29LV160 features 3.0V voltage read and write operation, with access times as fast a	EON 宜扬科技	EON
EN29LV160B-70TIP	16 Megabit (2048K x 8-bit / 1024K x 16-bit) Flash Memory Boot Sector Flash Memory, CMOS 3.0 Volt-only GENERAL DESCRIPTION The EN29LV160 is a 16-Megabit, electrically erasable, read/write non-volatile flash memory, organized as 2,097,152 bytes or 1,048,576 words. Any byte can be programmed typically in 8µs. The EN29LV160 features 3.0V voltage read and write operation, with access times as fast a	EON 宜扬科技	EON
EN29LV160B-70TP	16 Megabit (2048K x 8-bit / 1024K x 16-bit) Flash Memory Boot Sector Flash Memory, CMOS 3.0 Volt-only GENERAL DESCRIPTION The EN29LV160 is a 16-Megabit, electrically erasable, read/write non-volatile flash memory, organized as 2,097,152 bytes or 1,048,576 words. Any byte can be programmed typically in 8µs. The EN29LV160 features 3.0V voltage read and write operation, with access times as fast a	EON 宜扬科技	EON
EN29LV160B-90B	16 Megabit (2048K x 8-bit / 1024K x 16-bit) Flash Memory Boot Sector Flash Memory, CMOS 3.0 Volt-only GENERAL DESCRIPTION The EN29LV160 is a 16-Megabit, electrically erasable, read/write non-volatile flash memory, organized as 2,097,152 bytes or 1,048,576 words. Any byte can be programmed typically in 8µs. The EN29LV160 features 3.0V voltage read and write operation, with access times as fast a	EON 宜扬科技	EON
EN29LV160B-90BI	16 Megabit (2048K x 8-bit / 1024K x 16-bit) Flash Memory Boot Sector Flash Memory, CMOS 3.0 Volt-only GENERAL DESCRIPTION The EN29LV160 is a 16-Megabit, electrically erasable, read/write non-volatile flash memory, organized as 2,097,152 bytes or 1,048,576 words. Any byte can be programmed typically in 8µs. The EN29LV160 features 3.0V voltage read and write operation, with access times as fast a	EON 宜扬科技	EON
EN29LV160B-90BIP	16 Megabit (2048K x 8-bit / 1024K x 16-bit) Flash Memory Boot Sector Flash Memory, CMOS 3.0 Volt-only GENERAL DESCRIPTION The EN29LV160 is a 16-Megabit, electrically erasable, read/write non-volatile flash memory, organized as 2,097,152 bytes or 1,048,576 words. Any byte can be programmed typically in 8µs. The EN29LV160 features 3.0V voltage read and write operation, with access times as fast a	EON 宜扬科技	EON
EN29LV160B-90BP	16 Megabit (2048K x 8-bit / 1024K x 16-bit) Flash Memory Boot Sector Flash Memory, CMOS 3.0 Volt-only GENERAL DESCRIPTION The EN29LV160 is a 16-Megabit, electrically erasable, read/write non-volatile flash memory, organized as 2,097,152 bytes or 1,048,576 words. Any byte can be programmed typically in 8µs. The EN29LV160 features 3.0V voltage read and write operation, with access times as fast a	EON 宜扬科技	EON
EN29LV160B-90T	16 Megabit (2048K x 8-bit / 1024K x 16-bit) Flash Memory Boot Sector Flash Memory, CMOS 3.0 Volt-only GENERAL DESCRIPTION The EN29LV160 is a 16-Megabit, electrically erasable, read/write non-volatile flash memory, organized as 2,097,152 bytes or 1,048,576 words. Any byte can be programmed typically in 8µs. The EN29LV160 features 3.0V voltage read and write operation, with access times as fast a	EON 宜扬科技	EON
EN29LV160B-90TI	16 Megabit (2048K x 8-bit / 1024K x 16-bit) Flash Memory Boot Sector Flash Memory, CMOS 3.0 Volt-only GENERAL DESCRIPTION The EN29LV160 is a 16-Megabit, electrically erasable, read/write non-volatile flash memory, organized as 2,097,152 bytes or 1,048,576 words. Any byte can be programmed typically in 8µs. The EN29LV160 features 3.0V voltage read and write operation, with access times as fast a	EON 宜扬科技	EON
EN29LV160B-90TIP	16 Megabit (2048K x 8-bit / 1024K x 16-bit) Flash Memory Boot Sector Flash Memory, CMOS 3.0 Volt-only GENERAL DESCRIPTION The EN29LV160 is a 16-Megabit, electrically erasable, read/write non-volatile flash memory, organized as 2,097,152 bytes or 1,048,576 words. Any byte can be programmed typically in 8µs. The EN29LV160 features 3.0V voltage read and write operation, with access times as fast a	EON 宜扬科技	EON
EN29LV160B-90TP	16 Megabit (2048K x 8-bit / 1024K x 16-bit) Flash Memory Boot Sector Flash Memory, CMOS 3.0 Volt-only GENERAL DESCRIPTION The EN29LV160 is a 16-Megabit, electrically erasable, read/write non-volatile flash memory, organized as 2,097,152 bytes or 1,048,576 words. Any byte can be programmed typically in 8µs. The EN29LV160 features 3.0V voltage read and write operation, with access times as fast a	EON 宜扬科技	EON
EN29LV160C	16 Megabit (2048K x 8-bit / 1024K x 16-bit) Flash Memory Boot Sector Flash Memory, CMOS 3.0 Volt-only GENERAL DESCRIPTION The EN29LV160C is a 16-Megabit, electrically erasable, read/write non-volatile flash memory, organized as 2,097,152 bytes or 1,048,576 words. Any byte can be programmed typically in 8µs. The EN29LV160C features 3.0V voltage read and write operation, with access times as fast	EON 宜扬科技	EON
EN29LV160CB-70BIP	16 Megabit (2048K x 8-bit / 1024K x 16-bit) Flash Memory Boot Sector Flash Memory, CMOS 3.0 Volt-only GENERAL DESCRIPTION The EN29LV160C is a 16-Megabit, electrically erasable, read/write non-volatile flash memory, organized as 2,097,152 bytes or 1,048,576 words. Any byte can be programmed typically in 8µs. The EN29LV160C features 3.0V voltage read and write operation, with access times as fast	EON 宜扬科技	EON
EN29LV160CB-70TIP	16 Megabit (2048K x 8-bit / 1024K x 16-bit) Flash Memory Boot Sector Flash Memory, CMOS 3.0 Volt-only GENERAL DESCRIPTION The EN29LV160C is a 16-Megabit, electrically erasable, read/write non-volatile flash memory, organized as 2,097,152 bytes or 1,048,576 words. Any byte can be programmed typically in 8µs. The EN29LV160C features 3.0V voltage read and write operation, with access times as fast	EON 宜扬科技	EON
EN29LV160CT-70BIP	16 Megabit (2048K x 8-bit / 1024K x 16-bit) Flash Memory Boot Sector Flash Memory, CMOS 3.0 Volt-only GENERAL DESCRIPTION The EN29LV160C is a 16-Megabit, electrically erasable, read/write non-volatile flash memory, organized as 2,097,152 bytes or 1,048,576 words. Any byte can be programmed typically in 8µs. The EN29LV160C features 3.0V voltage read and write operation, with access times as fast	EON 宜扬科技	EON
EN29LV160CT-70TIP	16 Megabit (2048K x 8-bit / 1024K x 16-bit) Flash Memory Boot Sector Flash Memory, CMOS 3.0 Volt-only GENERAL DESCRIPTION The EN29LV160C is a 16-Megabit, electrically erasable, read/write non-volatile flash memory, organized as 2,097,152 bytes or 1,048,576 words. Any byte can be programmed typically in 8µs. The EN29LV160C features 3.0V voltage read and write operation, with access times as fast	EON 宜扬科技	EON
EN29LV160J	16 Megabit (2048K x 8-bit / 1024K x 16-bit) Flash Memory Boot Sector Flash Memory, CMOS 3.0 Volt-only [EON] GENERAL DESCRIPTION The EN29LV160J is a 16-Megabit, electrically erasable, read/write non-volatile flash memory, organized as 2,097,152 bytes or 1,048,576 words. Any byte can be programmed typically in 10µs. The EN29LV160J features 3.0V voltage read and write operation, with access t	ETCList of Unclassifed Manufacturers 未分类制造商	ETC
EN29LV160JB70S	16 Megabit (2048K x 8-bit / 1024K x 16-bit) Flash Memory Boot Sector Flash Memory, CMOS 3.0 Volt-only [EON] GENERAL DESCRIPTION The EN29LV160J is a 16-Megabit, electrically erasable, read/write non-volatile flash memory, organized as 2,097,152 bytes or 1,048,576 words. Any byte can be programmed typically in 10µs. The EN29LV160J features 3.0V voltage read and write operation, with access t	ETCList of Unclassifed Manufacturers 未分类制造商	ETC
EN29LV160JB70SI	16 Megabit (2048K x 8-bit / 1024K x 16-bit) Flash Memory Boot Sector Flash Memory, CMOS 3.0 Volt-only [EON] GENERAL DESCRIPTION The EN29LV160J is a 16-Megabit, electrically erasable, read/write non-volatile flash memory, organized as 2,097,152 bytes or 1,048,576 words. Any byte can be programmed typically in 10µs. The EN29LV160J features 3.0V voltage read and write operation, with access t	ETCList of Unclassifed Manufacturers 未分类制造商	ETC
EN29LV160JB70SIP	16 Megabit (2048K x 8-bit / 1024K x 16-bit) Flash Memory Boot Sector Flash Memory, CMOS 3.0 Volt-only [EON] GENERAL DESCRIPTION The EN29LV160J is a 16-Megabit, electrically erasable, read/write non-volatile flash memory, organized as 2,097,152 bytes or 1,048,576 words. Any byte can be programmed typically in 10µs. The EN29LV160J features 3.0V voltage read and write operation, with access t	ETCList of Unclassifed Manufacturers 未分类制造商	ETC

EN29LV160产品属性

类型
描述
型号
EN29LV160
制造商
EON-CFEON

EN29LV160供应商更多...

更新时间：2025-11-6 20:57:00

IC供应商	芯片型号	品牌	批号	封装	库存	备注	价格
深圳市益百分电子有限公司	EN29LV160BB-70TIP	CFEON	08+	TSSOP	2500	全新原装进口自己库存优势	询价
深圳市得捷芯城科技有限公司	EN29LV160CT-70TIP	EON	24+	NA/	3277	原装现货,当天可交货,原型号开票	询价
深圳市科芯源微电子有限公司	EN29LV160BB-70BIP	EON/宜扬	25+	BGA	54648	百分百原装现货实单必成欢迎询价	询价
深圳市华睿芯科技有限公司	EN29LV160AT-70TCP	ESMT	24+	TSSOP	20000	全新原厂原装，进口正品现货，正规渠道可含税！！	询价
深圳市威雅利发展有限公司	EN29LV160BT-70TIP	EON	1119+	TSOP	222	一级代理,专注军工、汽车、医疗、工业、新能源、电力	询价
深圳市粤骏腾电子科技有限公司	EN29LV160CT-70BIP	ESMT	24+	TFBGA-48	80000	原装现货	询价
深圳市毅创腾电子科技有限公司	EN29LV160AB-70TCP	EON	23+	BGA	6200	绝对全新原装!优势供货渠道!特价!请放心订购!	询价
谛辉(北京/上海/青岛 )电子科技有限公司	EN29LV160BT-70TIP	EON	25+	DIP-24	18000	原厂直接发货进口原装	询价
深圳市赛美科科技有限公司	EN29LV160CT-70TIP	EONSILICO		NA	8560	一级代理原装正品假一罚十价格优势长期供货	询价
深圳市华康联电子科技有限公司	EN29LV160CB70TIP	ESMT	23+	N/A	20000		询价

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EN29LV160规格书下载地址

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製造商: Intel 產品類型: 轉換電壓穩壓器 RoHS: 詳細資料安裝風格: SMD/SMT 封裝/外殼: QFN-20 輸出電壓: 600 mV to 6 V 輸出電流: 1 A 輸出數: 1 Output 最高輸入電壓: 6.6 V 拓撲學: Buck 輸入電壓最小: 2.4 V 交換頻率: 4 MHz 最低工作溫度: - 40 C 最高工作溫度: + 85 C 系列: EN53xx
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EN29LV160价格

EN29LV160产品属性

EN29LV160供应商更多...

EN29LV160芯片相关品牌

EN29LV160规格书下载地址

EN29LV160参数引脚图相关

EN29LV160数据表相关新闻

EN5311QI

EN5322QI

EN5311QI

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EN25QH16-104HIP

EN25Q32C-104HIP

DdatasheetPDF页码索引