位置：首页 > IC中文资料第679页 > EN29LV160A
| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
EN29LV160A | 16 MEGABIT (2048K X 8- BIT / 1024 K X 16-BIT) FLASH MEMORY GENERAL DESCRIPTION The EN29LV160A is a 16-Megabit, electrically erasable, read/write non-volatile flash memory, organized as 2,097,152 bytes or 1,048,576 words. Any byte can be programmed typically in 8µs. The EN29LV160A features 3.0V voltage read and write operation, with access times as fast | EON 宜扬科技 |   | |
EN29LV160A | 16 MEGABIT (2048K X 8- BIT / 1024 K X 16-BIT) FLASH MEMORY | EON 宜扬科技 | | |
16 MEGABIT (2048K X 8- BIT / 1024 K X 16-BIT) FLASH MEMORY GENERAL DESCRIPTION The EN29LV160A is a 16-Megabit, electrically erasable, read/write non-volatile flash memory, organized as 2,097,152 bytes or 1,048,576 words. Any byte can be programmed typically in 8µs. The EN29LV160A features 3.0V voltage read and write operation, with access times as fast | EON 宜扬科技 | | ||
16 MEGABIT (2048K X 8- BIT / 1024 K X 16-BIT) FLASH MEMORY GENERAL DESCRIPTION The EN29LV160A is a 16-Megabit, electrically erasable, read/write non-volatile flash memory, organized as 2,097,152 bytes or 1,048,576 words. Any byte can be programmed typically in 8µs. The EN29LV160A features 3.0V voltage read and write operation, with access times as fast | EON 宜扬科技 | | ||
16 MEGABIT (2048K X 8- BIT / 1024 K X 16-BIT) FLASH MEMORY GENERAL DESCRIPTION The EN29LV160A is a 16-Megabit, electrically erasable, read/write non-volatile flash memory, organized as 2,097,152 bytes or 1,048,576 words. Any byte can be programmed typically in 8µs. The EN29LV160A features 3.0V voltage read and write operation, with access times as fast | EON 宜扬科技 | | ||
16 MEGABIT (2048K X 8- BIT / 1024 K X 16-BIT) FLASH MEMORY GENERAL DESCRIPTION The EN29LV160A is a 16-Megabit, electrically erasable, read/write non-volatile flash memory, organized as 2,097,152 bytes or 1,048,576 words. Any byte can be programmed typically in 8µs. The EN29LV160A features 3.0V voltage read and write operation, with access times as fast | EON 宜扬科技 | | ||
16 MEGABIT (2048K X 8- BIT / 1024 K X 16-BIT) FLASH MEMORY GENERAL DESCRIPTION The EN29LV160A is a 16-Megabit, electrically erasable, read/write non-volatile flash memory, organized as 2,097,152 bytes or 1,048,576 words. Any byte can be programmed typically in 8µs. The EN29LV160A features 3.0V voltage read and write operation, with access times as fast | EON 宜扬科技 | | ||
16 MEGABIT (2048K X 8- BIT / 1024 K X 16-BIT) FLASH MEMORY GENERAL DESCRIPTION The EN29LV160A is a 16-Megabit, electrically erasable, read/write non-volatile flash memory, organized as 2,097,152 bytes or 1,048,576 words. Any byte can be programmed typically in 8µs. The EN29LV160A features 3.0V voltage read and write operation, with access times as fast | EON 宜扬科技 | | ||
16 MEGABIT (2048K X 8- BIT / 1024 K X 16-BIT) FLASH MEMORY GENERAL DESCRIPTION The EN29LV160A is a 16-Megabit, electrically erasable, read/write non-volatile flash memory, organized as 2,097,152 bytes or 1,048,576 words. Any byte can be programmed typically in 8µs. The EN29LV160A features 3.0V voltage read and write operation, with access times as fast | EON 宜扬科技 | | ||
16 MEGABIT (2048K X 8- BIT / 1024 K X 16-BIT) FLASH MEMORY GENERAL DESCRIPTION The EN29LV160A is a 16-Megabit, electrically erasable, read/write non-volatile flash memory, organized as 2,097,152 bytes or 1,048,576 words. Any byte can be programmed typically in 8µs. The EN29LV160A features 3.0V voltage read and write operation, with access times as fast | EON 宜扬科技 | | ||
16 MEGABIT (2048K X 8- BIT / 1024 K X 16-BIT) FLASH MEMORY GENERAL DESCRIPTION The EN29LV160A is a 16-Megabit, electrically erasable, read/write non-volatile flash memory, organized as 2,097,152 bytes or 1,048,576 words. Any byte can be programmed typically in 8µs. The EN29LV160A features 3.0V voltage read and write operation, with access times as fast | EON 宜扬科技 | | ||
16 MEGABIT (2048K X 8- BIT / 1024 K X 16-BIT) FLASH MEMORY GENERAL DESCRIPTION The EN29LV160A is a 16-Megabit, electrically erasable, read/write non-volatile flash memory, organized as 2,097,152 bytes or 1,048,576 words. Any byte can be programmed typically in 8µs. The EN29LV160A features 3.0V voltage read and write operation, with access times as fast | EON 宜扬科技 | | ||
16 MEGABIT (2048K X 8- BIT / 1024 K X 16-BIT) FLASH MEMORY GENERAL DESCRIPTION The EN29LV160A is a 16-Megabit, electrically erasable, read/write non-volatile flash memory, organized as 2,097,152 bytes or 1,048,576 words. Any byte can be programmed typically in 8µs. The EN29LV160A features 3.0V voltage read and write operation, with access times as fast | EON 宜扬科技 | | ||
16 MEGABIT (2048K X 8- BIT / 1024 K X 16-BIT) FLASH MEMORY GENERAL DESCRIPTION The EN29LV160A is a 16-Megabit, electrically erasable, read/write non-volatile flash memory, organized as 2,097,152 bytes or 1,048,576 words. Any byte can be programmed typically in 8µs. The EN29LV160A features 3.0V voltage read and write operation, with access times as fast | EON 宜扬科技 | | ||
16 MEGABIT (2048K X 8- BIT / 1024 K X 16-BIT) FLASH MEMORY GENERAL DESCRIPTION The EN29LV160A is a 16-Megabit, electrically erasable, read/write non-volatile flash memory, organized as 2,097,152 bytes or 1,048,576 words. Any byte can be programmed typically in 8µs. The EN29LV160A features 3.0V voltage read and write operation, with access times as fast | EON 宜扬科技 | | ||
16 MEGABIT (2048K X 8- BIT / 1024 K X 16-BIT) FLASH MEMORY GENERAL DESCRIPTION The EN29LV160A is a 16-Megabit, electrically erasable, read/write non-volatile flash memory, organized as 2,097,152 bytes or 1,048,576 words. Any byte can be programmed typically in 8µs. The EN29LV160A features 3.0V voltage read and write operation, with access times as fast | EON 宜扬科技 | | ||
16 MEGABIT (2048K X 8- BIT / 1024 K X 16-BIT) FLASH MEMORY GENERAL DESCRIPTION The EN29LV160A is a 16-Megabit, electrically erasable, read/write non-volatile flash memory, organized as 2,097,152 bytes or 1,048,576 words. Any byte can be programmed typically in 8µs. The EN29LV160A features 3.0V voltage read and write operation, with access times as fast | EON 宜扬科技 | | ||
16 MEGABIT (2048K X 8- BIT / 1024 K X 16-BIT) FLASH MEMORY GENERAL DESCRIPTION The EN29LV160A is a 16-Megabit, electrically erasable, read/write non-volatile flash memory, organized as 2,097,152 bytes or 1,048,576 words. Any byte can be programmed typically in 8µs. The EN29LV160A features 3.0V voltage read and write operation, with access times as fast | EON 宜扬科技 | | ||
16 MEGABIT (2048K X 8- BIT / 1024 K X 16-BIT) FLASH MEMORY GENERAL DESCRIPTION The EN29LV160A is a 16-Megabit, electrically erasable, read/write non-volatile flash memory, organized as 2,097,152 bytes or 1,048,576 words. Any byte can be programmed typically in 8µs. The EN29LV160A features 3.0V voltage read and write operation, with access times as fast | EON 宜扬科技 | | ||
16 MEGABIT (2048K X 8- BIT / 1024 K X 16-BIT) FLASH MEMORY GENERAL DESCRIPTION The EN29LV160A is a 16-Megabit, electrically erasable, read/write non-volatile flash memory, organized as 2,097,152 bytes or 1,048,576 words. Any byte can be programmed typically in 8µs. The EN29LV160A features 3.0V voltage read and write operation, with access times as fast | EON 宜扬科技 | | ||
16 MEGABIT (2048K X 8- BIT / 1024 K X 16-BIT) FLASH MEMORY GENERAL DESCRIPTION The EN29LV160A is a 16-Megabit, electrically erasable, read/write non-volatile flash memory, organized as 2,097,152 bytes or 1,048,576 words. Any byte can be programmed typically in 8µs. The EN29LV160A features 3.0V voltage read and write operation, with access times as fast | EON 宜扬科技 | | ||
16 MEGABIT (2048K X 8- BIT / 1024 K X 16-BIT) FLASH MEMORY GENERAL DESCRIPTION The EN29LV160A is a 16-Megabit, electrically erasable, read/write non-volatile flash memory, organized as 2,097,152 bytes or 1,048,576 words. Any byte can be programmed typically in 8µs. The EN29LV160A features 3.0V voltage read and write operation, with access times as fast | EON 宜扬科技 | | ||
16 MEGABIT (2048K X 8- BIT / 1024 K X 16-BIT) FLASH MEMORY GENERAL DESCRIPTION The EN29LV160A is a 16-Megabit, electrically erasable, read/write non-volatile flash memory, organized as 2,097,152 bytes or 1,048,576 words. Any byte can be programmed typically in 8µs. The EN29LV160A features 3.0V voltage read and write operation, with access times as fast | EON 宜扬科技 | | ||
16 MEGABIT (2048K X 8- BIT / 1024 K X 16-BIT) FLASH MEMORY GENERAL DESCRIPTION The EN29LV160A is a 16-Megabit, electrically erasable, read/write non-volatile flash memory, organized as 2,097,152 bytes or 1,048,576 words. Any byte can be programmed typically in 8µs. The EN29LV160A features 3.0V voltage read and write operation, with access times as fast | EON 宜扬科技 | | ||
16 MEGABIT (2048K X 8- BIT / 1024 K X 16-BIT) FLASH MEMORY GENERAL DESCRIPTION The EN29LV160A is a 16-Megabit, electrically erasable, read/write non-volatile flash memory, organized as 2,097,152 bytes or 1,048,576 words. Any byte can be programmed typically in 8µs. The EN29LV160A features 3.0V voltage read and write operation, with access times as fast | EON 宜扬科技 | | ||
16 MEGABIT (2048K X 8- BIT / 1024 K X 16-BIT) FLASH MEMORY GENERAL DESCRIPTION The EN29LV160A is a 16-Megabit, electrically erasable, read/write non-volatile flash memory, organized as 2,097,152 bytes or 1,048,576 words. Any byte can be programmed typically in 8µs. The EN29LV160A features 3.0V voltage read and write operation, with access times as fast | EON 宜扬科技 | | ||
16 MEGABIT (2048K X 8- BIT / 1024 K X 16-BIT) FLASH MEMORY GENERAL DESCRIPTION The EN29LV160A is a 16-Megabit, electrically erasable, read/write non-volatile flash memory, organized as 2,097,152 bytes or 1,048,576 words. Any byte can be programmed typically in 8µs. The EN29LV160A features 3.0V voltage read and write operation, with access times as fast | EON 宜扬科技 | | ||
16 MEGABIT (2048K X 8- BIT / 1024 K X 16-BIT) FLASH MEMORY GENERAL DESCRIPTION The EN29LV160A is a 16-Megabit, electrically erasable, read/write non-volatile flash memory, organized as 2,097,152 bytes or 1,048,576 words. Any byte can be programmed typically in 8µs. The EN29LV160A features 3.0V voltage read and write operation, with access times as fast | EON 宜扬科技 | | ||
16 MEGABIT (2048K X 8- BIT / 1024 K X 16-BIT) FLASH MEMORY GENERAL DESCRIPTION The EN29LV160A is a 16-Megabit, electrically erasable, read/write non-volatile flash memory, organized as 2,097,152 bytes or 1,048,576 words. Any byte can be programmed typically in 8µs. The EN29LV160A features 3.0V voltage read and write operation, with access times as fast | EON 宜扬科技 | | ||
16 MEGABIT (2048K X 8- BIT / 1024 K X 16-BIT) FLASH MEMORY GENERAL DESCRIPTION The EN29LV160A is a 16-Megabit, electrically erasable, read/write non-volatile flash memory, organized as 2,097,152 bytes or 1,048,576 words. Any byte can be programmed typically in 8µs. The EN29LV160A features 3.0V voltage read and write operation, with access times as fast | EON 宜扬科技 | | ||
16 MEGABIT (2048K X 8- BIT / 1024 K X 16-BIT) FLASH MEMORY GENERAL DESCRIPTION The EN29LV160A is a 16-Megabit, electrically erasable, read/write non-volatile flash memory, organized as 2,097,152 bytes or 1,048,576 words. Any byte can be programmed typically in 8µs. The EN29LV160A features 3.0V voltage read and write operation, with access times as fast | EON 宜扬科技 | | ||
16 MEGABIT (2048K X 8- BIT / 1024 K X 16-BIT) FLASH MEMORY GENERAL DESCRIPTION The EN29LV160A is a 16-Megabit, electrically erasable, read/write non-volatile flash memory, organized as 2,097,152 bytes or 1,048,576 words. Any byte can be programmed typically in 8µs. The EN29LV160A features 3.0V voltage read and write operation, with access times as fast | EON 宜扬科技 | | ||
16 MEGABIT (2048K X 8- BIT / 1024 K X 16-BIT) FLASH MEMORY GENERAL DESCRIPTION The EN29LV160A is a 16-Megabit, electrically erasable, read/write non-volatile flash memory, organized as 2,097,152 bytes or 1,048,576 words. Any byte can be programmed typically in 8µs. The EN29LV160A features 3.0V voltage read and write operation, with access times as fast | EON 宜扬科技 | | ||
16 MEGABIT (2048K X 8- BIT / 1024 K X 16-BIT) FLASH MEMORY GENERAL DESCRIPTION The EN29LV160A is a 16-Megabit, electrically erasable, read/write non-volatile flash memory, organized as 2,097,152 bytes or 1,048,576 words. Any byte can be programmed typically in 8µs. The EN29LV160A features 3.0V voltage read and write operation, with access times as fast | EON 宜扬科技 | | ||
16 Megabit (2048K x 8-bit / 1024K x 16-bit) Flash Memory Boot Sector Flash Memory, CMOS 3.0 Volt-only | EON 宜扬科技 | | ||
16 Megabit (2 M x 8-Bit/1 M x 16-Bit) CMOS 3.0 Volt-only Boot Sector Flash Memory GENERAL DESCRIPTION The Am29LV160B is a 16 Mbit, 3.0 Volt-only Flash memory organized as 2,097,152 bytes or 1,048,576 words. The device is offered in 48-ball FBGA, 44-pin SO, and 48-pin TSOP packages. The word-wide data (x16) appears on DQ15–DQ0; the byte-wide (x8) data appears on DQ7–DQ0. This d | AMD 超威半导体 | | ||
16M (2M X 8/1M X 16) BIT ■ GENERAL DESCRIPTION The MBM29LV160TE/BE is a 16M-bit, 3.0 V-only Flash memory organized as 2M bytes of 8 bits each or 1M words of 16 bits each. The MBM29LV160TE/BE is offered in a 48-pin TSOP (I), 48-pin CSOP and 48-ball FBGA packages. The device is designed to be programmed in-system with th | Fujitsu 富士通 | | ||
16 Megabit (2 M x 8-Bit/1 M x 16-Bit) MirrorBit 3.0 Volt-only Boot Sector Flash Memory General Description The Am29LV160M is a 16 Mbit, 3.0 Volt-only Flash memory organized as 2,097,152 bytes or 1,048,576 words. The device is offered in a 48-ball Fine-pitch BGA, 64-ball Fortified BGA, and 48-pin TSOP packages. The word-wide data (x16) appears on DQ15–DQ0; the byte-wide (x8) data | AMD 超威半导体 | | ||
16 Megabit (2 M x 8-Bit/1 M x 16-Bit) CMOS 3.0 Volt-only Boot Sector Flash Memory GENERAL DESCRIPTION The Am29LV160B is a 16 Mbit, 3.0 Volt-only Flash memory organized as 2,097,152 bytes or 1,048,576 words. The device is offered in 48-ball FBGA, 44-pin SO, and 48-pin TSOP packages. The word-wide data (x16) appears on DQ15–DQ0; the byte-wide (x8) data appears on DQ7–DQ0. This d | AMD 超威半导体 | | ||
16M-BIT [2Mx8/1Mx16] CMOS SINGLE VOLTAGE 3V ONLY FLASH MEMORY 文件：762.21 Kbytes Page：63 Pages | MCNIX ????????????旺宏电子 | |
EN29LV160A产品属性
- 类型
描述
- 型号
EN29LV160A
- 制造商
EON-CFEON
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
EON |
2016+ |
TSOP48 |
1757 |
只做原装,假一罚十,公司优势内存型号! |
|||
EON |
23+ |
NA |
20000 |
全新原装假一赔十 |
|||
EON |
24+ |
TSOP |
6000 |
只做自己库存 全新原装进口正品假一赔百 可开13%增 |
|||
EON |
24+/25+ |
645 |
原装正品现货库存价优 |
||||
ENO |
2025+ |
TSOP48 |
3768 |
全新原厂原装产品、公司现货销售 |
|||
EON |
22+ |
TSOP-48 |
12245 |
现货,原厂原装假一罚十! |
|||
EON |
24+ |
TSOP48 |
7850 |
只做原装正品现货或订货假一赔十! |
|||
EON |
24+ |
BGA |
27000 |
只做原装正品现货 欢迎来电查询15919825718 |
|||
EON |
0802+ |
明嘉莱只做原装正品现货 |
2510000 |
TSSOP-48 |
|||
EON |
2023+ |
TSOP48 |
6893 |
专注全新正品,优势现货供应 |
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EN29LV160A规格书下载地址
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EN29LV160A数据表相关新闻
EN5311QI
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製造商: Intel 產品類型: 轉換電壓穩壓器 RoHS: 詳細資料 安裝風格: SMD/SMT 封裝/外殼: QFN-20 輸出電壓: 600 mV to 6 V 輸出電流: 1 A 輸出數: 1 Output 最高輸入電壓: 6.6 V 拓撲學: Buck 輸入電壓 最小: 2.4 V 交換頻率: 4 MHz 最低工作溫度: - 40 C 最高工作溫度: + 85 C 系列: EN53xx
2020-10-27EN25QH32B-104HIP
EN25QH32B-104HIP，全新原装当天发货或门市自取0755-82732291.
2019-10-26EN25QH16-104HIP
EN25QH16-104HIP，全新原装当天发货或门市自取0755-82732291.
2019-10-26EN25Q32C-104HIP
EN25Q32C-104HIP，全新原装当天发货或门市自取0755-82732291.
2019-10-26
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