EN27C010 1Megabit EPROM (128K x 8)

文件：84.53 Kbytes Page：12 Pages

1Megabit EPROM (128K x 8)

1Megabit EPROM (128K x 8)

GENERAL DESCRIPTION\nThe EN27C010 is a low-power 1-Megabit, 5V-only one-time-programmable (OTP) read-only memory (EPROM). Organized into 128K words with 8 bits per word, it features QuikRiteTM single address location programming, typically at 20µs per byte. Any byte can be accessed in less than 45ns • Fast Read Access Time:\n   -45, -55, -70, and -90ns\n• Single 5V Power Supply\n• Programming Voltage +12.75V\n• QuikRiteTM Programming Algorithm\n• Typical programming time 20µs\n• Low Power CMOS Operation\n• 1µA Standby (Typical)\n• 30mA Operation (Max.)\n• CMOS- and TTL-Compatible I/O\n• High-Re;

EN27C010 1Megabit EPROM (128K x 8)

文件：84.53 Kbytes Page：12 Pages

1Megabit EPROM (128K x 8). Speed 45ns. Single 5V pover supply.

EN27C010 1Megabit EPROM (128K x 8)

文件：84.53 Kbytes Page：12 Pages

EN27C010 1Megabit EPROM (128K x 8)

文件：84.53 Kbytes Page：12 Pages

EN27C010 1Megabit EPROM (128K x 8)

文件：84.53 Kbytes Page：12 Pages

EN27C010 1Megabit EPROM (128K x 8)

文件：84.53 Kbytes Page：12 Pages

EN27C010 1Megabit EPROM (128K x 8)

文件：84.53 Kbytes Page：12 Pages

EN27C010 1Megabit EPROM (128K x 8)

文件：84.53 Kbytes Page：12 Pages

EN27C010 1Megabit EPROM (128K x 8)

文件：84.53 Kbytes Page：12 Pages

EN27C010 1Megabit EPROM (128K x 8)

文件：84.53 Kbytes Page：12 Pages

EN27C010 1Megabit EPROM (128K x 8)

文件：84.53 Kbytes Page：12 Pages

EN27C010 1Megabit EPROM (128K x 8)

文件：84.53 Kbytes Page：12 Pages

EN27C010 1Megabit EPROM (128K x 8)

文件：84.53 Kbytes Page：12 Pages

EN27C010 1Megabit EPROM (128K x 8)

文件：84.53 Kbytes Page：12 Pages

EN27C010 1Megabit EPROM (128K x 8)

文件：84.53 Kbytes Page：12 Pages

EN27C010 1Megabit EPROM (128K x 8)

文件：84.53 Kbytes Page：12 Pages

EN27C010 1Megabit EPROM (128K x 8)

文件：84.53 Kbytes Page：12 Pages

EN27C010 1Megabit EPROM (128K x 8)

文件：84.53 Kbytes Page：12 Pages

EN27C010 1Megabit EPROM (128K x 8)

文件：84.53 Kbytes Page：12 Pages

EN27C010 1Megabit EPROM (128K x 8)

文件：84.53 Kbytes Page：12 Pages

EN27C010 1Megabit EPROM (128K x 8)

文件：84.53 Kbytes Page：12 Pages

EN27C010 1Megabit EPROM (128K x 8)

文件：84.53 Kbytes Page：12 Pages

EN27C010 1Megabit EPROM (128K x 8)

文件：84.53 Kbytes Page：12 Pages

EN27C010 1Megabit EPROM (128K x 8)

文件：84.53 Kbytes Page：12 Pages

EN27C010 1Megabit EPROM (128K x 8)

文件：84.53 Kbytes Page：12 Pages

1,048,576-Bit 128K x 8 High Performance CMOS EPROM

General Description The FM27C010 is a high performance, 1,048,576-bit Electrically Programmable UV Erasable Read Only Memory. It is organized as 128K-words of 8 bits each. Its pin-compatibility with byte-wide JEDEC EPROMs enables upgrades through 8 Mbit EPROMs. The “Don’t Care” feature during rea

1,048,576-Bit 128K x 8 High Performance CMOS EPROM

General Description The FM27C010 is a high performance, 1,048,576-bit Electrically Programmable UV Erasable Read Only Memory. It is organized as 128K-words of 8 bits each. Its pin-compatibility with byte-wide JEDEC EPROMs enables upgrades through 8 Mbit EPROMs. The “Don’t Care” feature during rea

1,048,576-Bit 128K x 8 High Performance CMOS EPROM

General Description The FM27C010 is a high performance, 1,048,576-bit Electrically Programmable UV Erasable Read Only Memory. It is organized as 128K-words of 8 bits each. Its pin-compatibility with byte-wide JEDEC EPROMs enables upgrades through 8 Mbit EPROMs. The “Don’t Care” feature during rea

128K X 8 ELECTRICALLY ERASABLE EPROM

GENERAL DESCRIPTION The W27C010 is a high speed, low power Electrically Erasable and Programmable Read Only Memory organized as 131072 ´8 bits that operates on a single 5 volt power supply. The W27C010 provides an electrical chip erase function. FEATURES · High speed access time: 70/15

Military 128K x 8 CMOS EPROM

文件：48.37 Kbytes Page：5 Pages