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EMH2价格
参考价格：￥1.3971
型号：EMH2314-TL-H 品牌：ON 备注：这里有EMH2多少钱，2024年最近7天走势，今日出价，今日竞价，EMH2批发/采购报价，EMH2行情走势销售排行榜，EMH2报价。| 型号 | 功能描述 | 生产厂家&企业 | LOGO | 操作 |
|---|---|---|---|---|
EMH2 | General purpose (dual digital transistors) Features 1)TwoDTC144EschipsinaEMTorUMTor SMTpackage. 2)MountingpossiblewithEMT3orUMT3or SMT3automaticmountingmachines. 3)Transistorelementsareindependent, eliminatinginterference. 4)Mountingcostandareacanbecutinhalf. Application INVERTER,INTERFAC | ROHMRohm Semiconductor 罗姆罗姆半导体集团 |  |   |
EMH2 | General purpose transistors (dual transistors) Generalpurposetransistors(dualtransistors) FEATURES ●TwoDTC144Eschipinapackage ●MountingpossiblewithSOT-563automaticmountingmachines. ●Transistorelementsareindependent,eliminatinginterference. ●Mountingcostandareabecutinhalf. | HTSEMIShenzhen Jin Yu Semiconductor Co., Ltd. 金誉半导体深圳市金誉半导体股份有限公司 |  | |
EMH2 | Dual Digital Transistors (NPNNPN) DualDigitalTransistors(NPN+NPN) FEATURES ●TwoDTC144Eschipinapackage ●MountingpossiblewithSOT-563automaticmountingmachines ●Transistorelementsareindependent,eliminatinginterference ●Mountingcostandareabecutinhalf | JIANGSU Jiangsu Changjiang Electronics Technology Co., Ltd |  | |
EMH2 | NPN 100mA 50V Complex Digital Transistors Features 1)TwoDTC144EschipsinaEMTorUMTor SMTpackage. 2)MountingpossiblewithEMT3orUMT3or SMT3automaticmountingmachines. 3)Transistorelementsareindependent, eliminatinginterference. 4)Mountingcostandareacanbecutinhalf. Application INVERTER,INTERFAC | ROHMRohm Semiconductor 罗姆罗姆半导体集团 | | |
EMH2 | NPN 100mA 50V Complex Digital Transistors (Bias Resistor Built-in Transistors) Features 1)TwoDTC144EschipsinaEMTorUMTor SMTpackage. 2)MountingpossiblewithEMT3orUMT3or SMT3automaticmountingmachines. 3)Transistorelementsareindependent, eliminatinginterference. 4)Mountingcostandareacanbecutinhalf. Application INVERTER,INTERFAC | ROHMRohm Semiconductor 罗姆罗姆半导体集团 | | |
EMH2 | Dual Digital transistors (built-in resistors) 文件：523.12 Kbytes Page：4 Pages | FS First Silicon Co., Ltd |  | |
EMH2 | NPN 100mA 50V Complex Digital Transistors (Bias Resistor Built-in Transistors) 文件：482.03 Kbytes Page：8 Pages | ROHMRohm Semiconductor 罗姆罗姆半导体集团 | | |
EMH2 | General purpose (dual digital transistors) 文件：1.25881 Mbytes Page：11 Pages | ROHMRohm Semiconductor 罗姆罗姆半导体集团 | | |
P-Channel Silicon MOSFET General-Purpose Switching Device General-PurposeSwitchingDeviceApplications Features •TheEMH2301incorporatesaP-channelMOSFETthatfeaturelowON-resistanceandultrahigh-speedswitching,therebyenablinghigh-densitymounting. •1.8Vdrive. | SANYOSanyo 三洋三洋电机株式会社 |  | | |
P-Channel Silicon MOSFET General-Purpose Switching Device P-ChannelSiliconMOSFET General-PurposeSwitchingDeviceApplications Features •TheEMH2302incorporatesaP-channelMOSFETthatfeaturelowON-resistanceandultrahigh-speedswitching,therebyenablinghigh-densitymounting. •4Vdrive. | SANYOSanyo 三洋三洋电机株式会社 | | | |
General-Purpose Switching Device Applications General-PurposeSwitchingDeviceApplications Features •TheEMH2308incorporatesaP-channelMOSFETthatfeaturelowON-resistanceandultrahigh-speedswitching,therebyenablinghigh-densitymounting •1.8Vdrive •Halogenfreecompliance •Protectiondiodein | SANYOSanyo 三洋三洋电机株式会社 | | | |
P-Channel Power MOSFET Features •TheEMH2308incorporatesaP-channelMOSFETthatfeaturelowON-resistanceandultrahigh-speedswitching,therebyenablinghigh-densitymounting •1.8Vdrive •Halogenfreecompliance •Protectiondiodein | ONSEMION Semiconductor 安森美半导体安森美半导体公司 |  | | |
P-Channel Power MOSFET Features •TheEMH2308incorporatesaP-channelMOSFETthatfeaturelowON-resistanceandultrahigh-speedswitching,therebyenablinghigh-densitymounting •1.8Vdrive •Halogenfreecompliance •Protectiondiodein | ONSEMION Semiconductor 安森美半导体安森美半导体公司 | | | |
Dual P-Channel Power MOSFET Features •ON-resistanceRDS(on)1=28mΩ(typ.) •Halogenfreecompliance •1.8Vdrive •ProtectionDiodein | ONSEMION Semiconductor 安森美半导体安森美半导体公司 | | | |
General-Purpose Switching Device Applications Features •ON-resistanceRDS(on)1=28mΩ(typ.) •1.8Vdrive •Halogenfreecompliance •ProtectionDiodein | SANYOSanyo 三洋三洋电机株式会社 | | | |
Dual P-Channel Power MOSFET Features •ON-resistanceRDS(on)1=28mΩ(typ.) •Halogenfreecompliance •1.8Vdrive •ProtectionDiodein | ONSEMION Semiconductor 安森美半导体安森美半导体公司 | | | |
N-Channel Silicon MOSFET General-Purpose Switching Device General-PurposeSwitchingDeviceApplications Features •TheEMH2401incorporatesanN-channelMOSFETthatfeaturelowON-resistanceandultrahigh-speedswitching,therebyenablinghigh-densitymounting. •1.8Vdrive. | SANYOSanyo 三洋三洋电机株式会社 | | | |
N-Channel Silicon MOSFET General-Purpose Switching Device General-PurposeSwitchingDeviceApplications Features •TheEMH2402incorporatesanN-channelMOSFETthatfeaturelowON-resistanceandultrahigh-speedswitching,therebyenablinghigh-densitymounting. •4Vdrive. | SANYOSanyo 三洋三洋电机株式会社 | | | |
N-Channel Silicon MOSFET General-Purpose Switching Device Applications General-PurposeSwitchingDeviceApplications Features •LowON-resistance •BestsuitedforLiBcharginganddischargingswitch •Common-draintype •2.5Vdrive •Protectiondiodein | SANYOSanyo 三洋三洋电机株式会社 | | | |
N-Channel Power MOSFET Features •LowON-resistance •BestsuitedforLiBcharginganddischargingswitch •Common-draintype •2.5Vdrive •Protectiondiodein | ONSEMION Semiconductor 安森美半导体安森美半导体公司 | | | |
General-Purpose Switching Device Applications General-PurposeSwitchingDeviceApplications Features •ON-resistanceRDS(on)1:16mΩ(typ.) •BestsuitedforLiBcharginganddischargingswitch •Common-draintype •2.5Vdrive •Halogenfreecompliance | SANYOSanyo 三洋三洋电机株式会社 | | | |
N-Channel Power MOSFET Features •LowON-resistance •BestsuitedforLiBcharginganddischargingswitch •Common-draintype •2.5Vdrive •Protectiondiodein | ONSEMION Semiconductor 安森美半导体安森美半导体公司 | | | |
N-Channel Silicon MOSFET General-Purpose Switching Device Applications General-PurposeSwitchingDeviceApplications Features •TheEMH2408incorporatesaN-channelMOSFETthatfeaturelowON-resistanceandultrahigh-speedswitching,therebyenablinghigh-densitymounting •1.8Vdrive •Halogenfreecompliance | SANYOSanyo 三洋三洋电机株式会社 | | | |
N-Channel Power MOSFET Features •TheEMH2408incorporatesaN-channelMOSFETthatfeaturelowON-resistanceandultrahigh-speedswitching,therebyenablinghigh-densitymounting •1.8Vdrive •Halogenfreecompliance | ONSEMION Semiconductor 安森美半导体安森美半导体公司 | | | |
N-Channel Power MOSFET Features •TheEMH2408incorporatesaN-channelMOSFETthatfeaturelowON-resistanceandultrahigh-speedswitching,therebyenablinghigh-densitymounting •1.8Vdrive •Halogenfreecompliance | ONSEMION Semiconductor 安森美半导体安森美半导体公司 | | | |
N-Channel Silicon MOSFET General-Purpose Switching Device Applications General-PurposeSwitchingDeviceApplications Features •TheEMH2409incorporatesaN-channelMOSFETthatfeaturelowON-resistanceandultrahigh-speedswitching,therebyenablinghigh-densitymounting •4Vdrive •Halogenfreecompliance •Protectiondiodein | SANYOSanyo 三洋三洋电机株式会社 | | | |
N-Channel Power MOSFET Features •TheEMH2409incorporatesaN-channelMOSFETthatfeaturelowON-resistanceandultrahigh-speedswitching,therebyenablinghigh-densitymounting •4Vdrive •Halogenfreecompliance •Protectiondiodein | ONSEMION Semiconductor 安森美半导体安森美半导体公司 | | | |
N-Channel Power MOSFET Features •TheEMH2409incorporatesaN-channelMOSFETthatfeaturelowON-resistanceandultrahigh-speedswitching,therebyenablinghigh-densitymounting •4Vdrive •Halogenfreecompliance •Protectiondiodein | ONSEMION Semiconductor 安森美半导体安森美半导体公司 | | | |
General-Purpose Switching Device Applications General-PurposeSwitchingDeviceApplications Features •LowON-resistance •BestsuitedforLiBcharginganddischargingswitch •Common-draintype •2.5Vdrive •Halogenfreecompliance •Protectiondiodein | SANYOSanyo 三洋三洋电机株式会社 | | | |
N-Channel Power MOSFET Features •LowON-resistance •BestsuitedforLiBcharginganddischargingswitch •Common-draintype •2.5Vdrive •Halogenfreecompliance •Protectiondiodein | ONSEMION Semiconductor 安森美半导体安森美半导体公司 | | | |
General purpose (dual digital transistors) Features 1)TwoDTC143ZchipsinaEMTpackage. 2)MountingpossiblewithEMTautomaticmountingmachines. 3)Transistorelementsareindependent,eliminatinginterference. 4)Mountingcostandareacanbecutinhalf. Structure EpitaxialplanartypeNPNsilicontransistor | ROHMRohm Semiconductor 罗姆罗姆半导体集团 | | | |
N-Channel and P-Channel Silicon MOSFETs General-Purpose Switching Device General-PurposeSwitchingDeviceApplications Features •TheEMH2601incorporatesanN-channelMOSFETandaP-channelMOSFETthatfeaturelowON-resistanceandultrahigh-speedswitching,therebyenablinghigh-densitymounting. •1.8Vdrive. | SANYOSanyo 三洋三洋电机株式会社 | | | |
N-Channel and P-Channel Silicon MOSFETs General-Purpose Switching Device General-PurposeSwitchingDeviceApplications Features •TheEMH2602incorporatesanN-channelMOSFETandaP-channelMOSFETthatfeaturelowON-resistanceandultrahigh-speedswitching,therebyenablinghigh-densitymounting. •4Vdrive. | SANYOSanyo 三洋三洋电机株式会社 | | | |
N-Channel and P-Channel Silicon MOSFETs General-Purpose Switching Device General-PurposeSwitchingDeviceApplications Features •TheEMH2603incorporatesanN-channelMOSFETandaP-channelMOSFETthatfeaturelowON-resistanceandultrahigh-speedswitching,therebyenablinghigh-densitymounting. •Nch:2.5Vdrive. •Pch:1.8Vdrive. | SANYOSanyo 三洋三洋电机株式会社 | | | |
General-Purpose Switching Device Applications General-PurposeSwitchingDeviceApplications Features •Nch+PchMOSFET •ON-resistanceNch:RDS(on)1=34mΩ(typ.)Pch:RDS(on)1=65mΩ(typ.) •1.8Vdrive •Halogenfreecompliance | SANYOSanyo 三洋三洋电机株式会社 | | | |
Power MOSFET Features •Nch+PchMOSFET •ON-resistanceNch:RDS(on)1=34mΩ(typ.)Pch:RDS(on)1=65mΩ(typ.) •1.8Vdrive •Halogenfreecompliance | ONSEMION Semiconductor 安森美半导体安森美半导体公司 | | | |
Power MOSFET Features •Nch+PchMOSFET •ON-resistanceNch:RDS(on)1=34mΩ(typ.)Pch:RDS(on)1=65mΩ(typ.) •1.8Vdrive •Halogenfreecompliance | ONSEMION Semiconductor 安森美半导体安森美半导体公司 | | | |
SBD : Schottky Barrier Diode General-Purpose Switching Device Applications MOSFET:P-ChannelSiliconMOSFET SBD:SchottkyBarrierDiode Features •CompositetypewithaP-ChannelSilliconMOSFETandaSchottkyBarrierDiodecontainedinonepackagefacilitatinghigh-densitymounting •[MOSFET] •LowON-resistance •1.8Vdrive •[SBD] •Smallswitching | SANYOSanyo 三洋三洋电机株式会社 | | | |
P-Channel Power MOSFET P-ChannelPowerMOSFET –20V,–3A,85mΩ,SingleEMH8withSchottkyDiode Features •CompositetypewithaP-ChannelSilliconMOSFETandaSchottkyBarrierDiodecontainedinonepackagefacilitatinghigh-densitymounting •[MOSFET] •LowON-resistance •1.8Vdrive •[SBD] •Smal | ONSEMION Semiconductor 安森美半导体安森美半导体公司 | | | |
P-Channel Power MOSFET P-ChannelPowerMOSFET –20V,–3A,85mΩ,SingleEMH8withSchottkyDiode Features •CompositetypewithaP-ChannelSilliconMOSFETandaSchottkyBarrierDiodecontainedinonepackagefacilitatinghigh-densitymounting •[MOSFET] •LowON-resistance •1.8Vdrive •[SBD] •Smal | ONSEMION Semiconductor 安森美半导体安森美半导体公司 | | | |
NPN 100mA 50V Complex Digital Transistors (Bias Resistor Built-in Transistors) Features 1)TwoDTC144EschipsinaEMTorUMTor SMTpackage. 2)MountingpossiblewithEMT3orUMT3or SMT3automaticmountingmachines. 3)Transistorelementsareindependent, eliminatinginterference. 4)Mountingcostandareacanbecutinhalf. Application INVERTER,INTERFAC | ROHMRohm Semiconductor 罗姆罗姆半导体集团 | | | |
NPN 100mA 50V Complex Digital Transistors (Bias Resistor Built-in Transistors) 文件：482.03 Kbytes Page：8 Pages | ROHMRohm Semiconductor 罗姆罗姆半导体集团 | | | |
General purpose (dual digital transistors) 文件：1.25881 Mbytes Page：11 Pages | ROHMRohm Semiconductor 罗姆罗姆半导体集团 | | | |
General-Purpose Switching Device Applications 文件：510.24 Kbytes Page：7 Pages | SANYOSanyo 三洋三洋电机株式会社 | | | |
General-Purpose Switching Device Applications 文件：510.24 Kbytes Page：7 Pages | SANYOSanyo 三洋三洋电机株式会社 | | | |
General-Purpose Switching Device Applications 文件：508.3 Kbytes Page：7 Pages | SANYOSanyo 三洋三洋电机株式会社 | | | |
General-Purpose Switching Device Applications 文件：508.3 Kbytes Page：7 Pages | SANYOSanyo 三洋三洋电机株式会社 | | | |
封装/外壳：8-SMD，扁平引线 包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 描述：MOSFET 2N-CH 20V 6A EMH8 分立半导体产品 晶体管 - FET，MOSFET - 阵列 | ONSEMION Semiconductor 安森美半导体安森美半导体公司 | | | |
General-Purpose Switching Device Applications 文件：511.82 Kbytes Page：7 Pages | SANYOSanyo 三洋三洋电机株式会社 | | | |
General-Purpose Switching Device Applications 文件：511.82 Kbytes Page：7 Pages | SANYOSanyo 三洋三洋电机株式会社 | | | |
General-Purpose Switching Device Applications 文件：511.54 Kbytes Page：7 Pages | SANYOSanyo 三洋三洋电机株式会社 | | | |
General-Purpose Switching Device Applications 文件：511.54 Kbytes Page：7 Pages | SANYOSanyo 三洋三洋电机株式会社 | | | |
General-Purpose Switching Device Applications 文件：503.81 Kbytes Page：7 Pages | SANYOSanyo 三洋三洋电机株式会社 | | | |
General-Purpose Switching Device Applications 文件：503.81 Kbytes Page：7 Pages | SANYOSanyo 三洋三洋电机株式会社 | | | |
N-Channel Silicon MOSFET General-Purpose Switching Device Applications 文件：275.12 Kbytes Page：4 Pages | SANYOSanyo 三洋三洋电机株式会社 | | | |
N-Channel Power MOSFET 文件：550.81 Kbytes Page：7 Pages | ONSEMION Semiconductor 安森美半导体安森美半导体公司 | | | |
General-Purpose Switching Device Applications 文件：203.94 Kbytes Page：7 Pages | SANYOSanyo 三洋三洋电机株式会社 | | | |
General-Purpose Switching Device Applications 文件：203.94 Kbytes Page：7 Pages | SANYOSanyo 三洋三洋电机株式会社 | | | |
N-Channel Power MOSFET 文件：550.81 Kbytes Page：7 Pages | ONSEMION Semiconductor 安森美半导体安森美半导体公司 | | | |
N-Channel Power MOSFET 文件：550.81 Kbytes Page：7 Pages | ONSEMION Semiconductor 安森美半导体安森美半导体公司 | | |
EMH2产品属性
- 类型
描述
- 型号
EMH2
- 制造商
ROHM Semiconductor
- 功能描述
DIVIDER TYPE NPNx2 SM DIGITAL TRANSISTOR EMT5/6
- 制造商
ROHM Semiconductor
- 功能描述
DIVIDER TYPE NPNx2 SM DIGITAL TRANSISTOR EMT5/6 - free partial T/R at 500.
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
ON |
2016+ |
ECH-8 |
8880 |
只做原装,假一罚十,公司可开17%增值税发票! |
|||
ON |
2019+ |
EMH-8 |
6000 |
只做自己库存,全新原装进口正品假一赔百,可开13%增 |
|||
Rohm Semiconductor |
24+ |
SOT-563,SOT-666 |
30000 |
晶体管-分立半导体产品-原装正品 |
|||
三年内 |
1983 |
纳立只做原装正品13590203865 |
|||||
ON/安森美 |
23+ |
EMH8 |
54258 |
全新原厂原装正品现货,可提供技术支持、样品免费! |
|||
ROHM |
23+ |
SOT666 |
20000 |
原厂原装正品现货 |
|||
ROHM |
2023+ |
SOT563 |
50000 |
原装现货 |
|||
ON/安森美 |
10+ |
SOT363 |
30103 |
进口原盘现货/3K |
|||
ON |
22+ |
N/A |
5000 |
挂了就有,工厂库存,YX价优 |
|||
ROHM |
23+ |
SOT-6 |
8890 |
价格优势、原装现货、客户至上。欢迎广大客户来电查询 |
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