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EMH2价格

参考价格：￥1.3971

型号：EMH2314-TL-H 品牌：ON 备注：这里有EMH2多少钱，2025年最近7天走势，今日出价，今日竞价，EMH2批发/采购报价，EMH2行情走势销售排行榜，EMH2报价。

型号	功能描述	生产厂家企业	LOGO
EMH2	General purpose (dual digital transistors) Features 1)Two DTC144Es chips in a EMT or UMT or SMT package. 2)Mounting possible with EMT3 or UMT3 or SMT3 automatic mounting machines. 3)Transistor elements are independent, eliminating interference. 4)Mounting cost and area can be cut in half. Application INVERTER, INTERFAC	ROHM 罗姆	ROHM
EMH2	General purpose transistors (dual transistors) General purpose transistors (dual transistors) FEATURES ● Two DTC144Es chip in a package ● Mounting possible with SOT-563 automatic mounting machines. ● Transistor elements are independent, eliminating interference. ● Mounting cost and area be cut in half.	HTSEMI 金誉半导体	HTSEMI
EMH2	Dual Digital Transistors (NPNNPN) Dual Digital Transistors (NPN+NPN) FEATURES ● Two DTC144Es chip in a package ● Mounting possible with SOT-563 automatic mounting machines ● Transistor elements are independent, eliminating interference ● Mounting cost and area be cut in half	JIANGSU 长电科技	JIANGSU
EMH2	NPN 100mA 50V Complex Digital Transistors Features 1)Two DTC144Es chips in a EMT or UMT or SMT package. 2)Mounting possible with EMT3 or UMT3 or SMT3 automatic mounting machines. 3)Transistor elements are independent, eliminating interference. 4)Mounting cost and area can be cut in half. Application INVERTER, INTERFAC	ROHM 罗姆	ROHM
EMH2	NPN 100mA 50V Complex Digital Transistors (Bias Resistor Built-in Transistors) Features 1)Two DTC144Es chips in a EMT or UMT or SMT package. 2)Mounting possible with EMT3 or UMT3 or SMT3 automatic mounting machines. 3)Transistor elements are independent, eliminating interference. 4)Mounting cost and area can be cut in half. Application INVERTER, INTERFAC	ROHM 罗姆	ROHM
EMH2	Dual Digital transistors (built-in resistors) 文件：523.12 Kbytes Page：4 Pages	FS	FS
EMH2	NPN 100mA 50V Complex Digital Transistors (Bias Resistor Built-in Transistors) 文件：482.03 Kbytes Page：8 Pages	ROHM 罗姆	ROHM
EMH2	General purpose (dual digital transistors) 文件：1.25881 Mbytes Page：11 Pages	ROHM 罗姆	ROHM
EMH2	Complex Transistor(DTR+DTR)	ROHM 罗姆	ROHM
EMH2301	P-Channel Silicon MOSFET General-Purpose Switching Device General-Purpose Switching Device Applications Features • The EMH2301 incorporates a P-channel MOSFET that feature low ON-resistance and ultrahigh-speed switching, thereby enabling high-density mounting. • 1.8V drive.	SANYO 三洋	SANYO
EMH2302	P-Channel Silicon MOSFET General-Purpose Switching Device P-Channel Silicon MOSFET General-Purpose Switching Device Applications Features • The EMH2302 incorporates a P-channel MOSFET that feature low ON-resistance and ultrahigh-speed switching, thereby enabling high-density mounting. • 4V drive.	SANYO 三洋	SANYO
EMH2308	General-Purpose Switching Device Applications General-Purpose Switching Device Applications Features • The EMH2308 incorporates a P-channel MOSFET that feature low ON-resistance and ultrahigh-speed switching, thereby enabling high-density mounting • 1.8V drive • Halogen free compliance • Protection diode in	SANYO 三洋	SANYO
EMH2308	P-Channel Power MOSFET Features • The EMH2308 incorporates a P-channel MOSFET that feature low ON-resistance and ultrahigh-speed switching, thereby enabling high-density mounting • 1.8V drive • Halogen free compliance • Protection diode in	ONSEMI 安森美半导体	ONSEMI
EMH2308-TL-H	P-Channel Power MOSFET Features • The EMH2308 incorporates a P-channel MOSFET that feature low ON-resistance and ultrahigh-speed switching, thereby enabling high-density mounting • 1.8V drive • Halogen free compliance • Protection diode in	ONSEMI 安森美半导体	ONSEMI
EMH2314	Dual P-Channel Power MOSFET Features • ON-resistance RDS(on)1=28mΩ(typ.) • Halogen free compliance • 1.8V drive • Protection Diode in	ONSEMI 安森美半导体	ONSEMI
EMH2314	General-Purpose Switching Device Applications Features • ON-resistance RDS(on)1=28mΩ(typ.) • 1.8V drive • Halogen free compliance • Protection Diode in	SANYO 三洋	SANYO
EMH2314-TL-H	Dual P-Channel Power MOSFET Features • ON-resistance RDS(on)1=28mΩ(typ.) • Halogen free compliance • 1.8V drive • Protection Diode in	ONSEMI 安森美半导体	ONSEMI
EMH2401	N-Channel Silicon MOSFET General-Purpose Switching Device General-Purpose Switching Device Applications Features • The EMH2401 incorporates an N-channel MOSFET that feature low ON-resistance and ultrahigh-speed switching, thereby enabling high-density mounting. • 1.8V drive.	SANYO 三洋	SANYO
EMH2402	N-Channel Silicon MOSFET General-Purpose Switching Device General-Purpose Switching Device Applications Features • The EMH2402 incorporates an N-channel MOSFET that feature low ON-resistance and ultrahigh-speed switching, thereby enabling high-density mounting. • 4V drive.	SANYO 三洋	SANYO
EMH2407	N-Channel Silicon MOSFET General-Purpose Switching Device Applications General-Purpose Switching Device Applications Features • Low ON-resistance • Best suited for LiB charging and discharging switch • Common-drain type • 2.5V drive • Protection diode in	SANYO 三洋	SANYO
EMH2407	N-Channel Power MOSFET Features • Low ON-resistance • Best suited for LiB charging and discharging switch • Common-drain type • 2.5V drive • Protection diode in	ONSEMI 安森美半导体	ONSEMI
EMH2407R	General-Purpose Switching Device Applications General-Purpose Switching Device Applications Features • ON-resistance RDS(on)1 : 16mΩ(typ.) • Best suited for LiB charging and discharging switch • Common-drain type • 2.5V drive • Halogen free compliance	SANYO 三洋	SANYO
EMH2407-TL-H	N-Channel Power MOSFET Features • Low ON-resistance • Best suited for LiB charging and discharging switch • Common-drain type • 2.5V drive • Protection diode in	ONSEMI 安森美半导体	ONSEMI
EMH2408	N-Channel Silicon MOSFET General-Purpose Switching Device Applications General-Purpose Switching Device Applications Features • The EMH2408 incorporates a N-channel MOSFET that feature low ON-resistance and ultrahigh-speed switching, thereby enabling high-density mounting • 1.8V drive • Halogen free compliance	SANYO 三洋	SANYO
EMH2408	N-Channel Power MOSFET Features • The EMH2408 incorporates a N-channel MOSFET that feature low ON-resistance and ultrahigh-speed switching, thereby enabling high-density mounting • 1.8V drive • Halogen free compliance	ONSEMI 安森美半导体	ONSEMI
EMH2408-TL-H	N-Channel Power MOSFET Features • The EMH2408 incorporates a N-channel MOSFET that feature low ON-resistance and ultrahigh-speed switching, thereby enabling high-density mounting • 1.8V drive • Halogen free compliance	ONSEMI 安森美半导体	ONSEMI
EMH2409	N-Channel Silicon MOSFET General-Purpose Switching Device Applications General-Purpose Switching Device Applications Features • The EMH2409 incorporates a N-channel MOSFET that feature low ON-resistance and ultrahigh-speed switching, thereby enabling high-density mounting • 4V drive • Halogen free compliance • Protection diode in	SANYO 三洋	SANYO
EMH2409	N-Channel Power MOSFET Features • The EMH2409 incorporates a N-channel MOSFET that feature low ON-resistance and ultrahigh-speed switching, thereby enabling high-density mounting • 4V drive • Halogen free compliance • Protection diode in	ONSEMI 安森美半导体	ONSEMI
EMH2409-TL-H	N-Channel Power MOSFET Features • The EMH2409 incorporates a N-channel MOSFET that feature low ON-resistance and ultrahigh-speed switching, thereby enabling high-density mounting • 4V drive • Halogen free compliance • Protection diode in	ONSEMI 安森美半导体	ONSEMI
EMH2411R	General-Purpose Switching Device Applications General-Purpose Switching Device Applications Features • Low ON-resistance • Best suited for LiB charging and discharging switch • Common-drain type • 2.5V drive • Halogen free compliance • Protection diode in	SANYO 三洋	SANYO
EMH2411R	N-Channel Power MOSFET Features • Low ON-resistance • Best suited for LiB charging and discharging switch • Common-drain type • 2.5V drive • Halogen free compliance • Protection diode in	ONSEMI 安森美半导体	ONSEMI
EMH25	General purpose (dual digital transistors) Features 1) Two DTC143Z chips in a EMT package. 2) Mounting possible with EMT automatic mounting machines. 3) Transistor elements are independent, eliminating interference. 4) Mounting cost and area can be cut in half. Structure Epitaxial planar type NPN silicon transistor	ROHM 罗姆	ROHM
EMH2601	N-Channel and P-Channel Silicon MOSFETs General-Purpose Switching Device General-Purpose Switching Device Applications Features • The EMH2601 incorporates an N-channel MOSFET and a P-channel MOSFET that feature low ON-resistance and ultrahigh-speed switching, thereby enabling high-density mounting. • 1.8V drive.	SANYO 三洋	SANYO
EMH2602	N-Channel and P-Channel Silicon MOSFETs General-Purpose Switching Device General-Purpose Switching Device Applications Features • The EMH2602 incorporates an N-channel MOSFET and a P-channel MOSFET that feature low ON-resistance and ultrahigh-speed switching, thereby enabling high-density mounting. • 4V drive.	SANYO 三洋	SANYO
EMH2603	N-Channel and P-Channel Silicon MOSFETs General-Purpose Switching Device General-Purpose Switching Device Applications Features • The EMH2603 incorporates an N-channel MOSFET and a P-channel MOSFET that feature low ON-resistance and ultrahigh-speed switching, thereby enabling high-density mounting. • Nch: 2.5V drive. • Pch: 1.8V drive.	SANYO 三洋	SANYO
EMH2604	General-Purpose Switching Device Applications General-Purpose Switching Device Applications Features • Nch + Pch MOSFET • ON-resistance Nch : RDS(on)1=34mΩ(typ.) Pch : RDS(on)1=65mΩ(typ.) • 1.8V drive • Halogen free compliance	SANYO 三洋	SANYO
EMH2604	Power MOSFET Features • Nch + Pch MOSFET • ON-resistance Nch : RDS(on)1=34mΩ(typ.) Pch : RDS(on)1=65mΩ(typ.) • 1.8V drive • Halogen free compliance	ONSEMI 安森美半导体	ONSEMI
EMH2604-TL-H	Power MOSFET Features • Nch + Pch MOSFET • ON-resistance Nch : RDS(on)1=34mΩ(typ.) Pch : RDS(on)1=65mΩ(typ.) • 1.8V drive • Halogen free compliance	ONSEMI 安森美半导体	ONSEMI
EMH2801	SBD : Schottky Barrier Diode General-Purpose Switching Device Applications MOSFET : P-Channel Silicon MOSFET SBD : Schottky Barrier Diode Features • Composite type with a P-Channel Sillicon MOSFET and a Schottky Barrier Diode contained in one package facilitating high-density mounting • [MOSFET] • Low ON-resistance • 1.8V drive • [SBD] • Small switching	SANYO 三洋	SANYO
EMH2801	P-Channel Power MOSFET P-Channel Power MOSFET –20V, –3A, 85mΩ, Single EMH8 with Schottky Diode Features • Composite type with a P-Channel Sillicon MOSFET and a Schottky Barrier Diode contained in one package facilitating high-density mounting • [MOSFET] • Low ON-resistance • 1.8V drive • [SBD] • Smal	ONSEMI 安森美半导体	ONSEMI
EMH2801-TL-H	P-Channel Power MOSFET P-Channel Power MOSFET –20V, –3A, 85mΩ, Single EMH8 with Schottky Diode Features • Composite type with a P-Channel Sillicon MOSFET and a Schottky Barrier Diode contained in one package facilitating high-density mounting • [MOSFET] • Low ON-resistance • 1.8V drive • [SBD] • Smal	ONSEMI 安森美半导体	ONSEMI
EMH2T2R	NPN 100mA 50V Complex Digital Transistors (Bias Resistor Built-in Transistors) Features 1)Two DTC144Es chips in a EMT or UMT or SMT package. 2)Mounting possible with EMT3 or UMT3 or SMT3 automatic mounting machines. 3)Transistor elements are independent, eliminating interference. 4)Mounting cost and area can be cut in half. Application INVERTER, INTERFAC	ROHM 罗姆	ROHM
EMH2_12	NPN 100mA 50V Complex Digital Transistors (Bias Resistor Built-in Transistors) 文件：482.03 Kbytes Page：8 Pages	ROHM 罗姆	ROHM
EMH2_15	General purpose (dual digital transistors) 文件：1.25881 Mbytes Page：11 Pages	ROHM 罗姆	ROHM
EMH2308	General-Purpose Switching Device Applications 文件：510.24 Kbytes Page：7 Pages	SANYO 三洋	SANYO
EMH2308_12	General-Purpose Switching Device Applications 文件：510.24 Kbytes Page：7 Pages	SANYO 三洋	SANYO
EMH2402	N-Channel Silicon MOSFET General-Purpose Switching Device	ONSEMI 安森美半导体	ONSEMI
EMH2407	General-Purpose Switching Device Applications 文件：508.3 Kbytes Page：7 Pages	SANYO 三洋	SANYO
EMH2407_12	General-Purpose Switching Device Applications 文件：508.3 Kbytes Page：7 Pages	SANYO 三洋	SANYO
EMH2407R	General-Purpose Switching Device Applications	ONSEMI 安森美半导体	ONSEMI
EMH2407-S-TL-HX	封装/外壳：8-SMD，扁平引线包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带描述：MOSFET 2N-CH 20V 6A EMH8 分立半导体产品晶体管 - FET，MOSFET - 阵列	ONSEMI 安森美半导体	ONSEMI
EMH2408	General-Purpose Switching Device Applications 文件：511.82 Kbytes Page：7 Pages	SANYO 三洋	SANYO
EMH2408_12	General-Purpose Switching Device Applications 文件：511.82 Kbytes Page：7 Pages	SANYO 三洋	SANYO
EMH2409	General-Purpose Switching Device Applications 文件：511.54 Kbytes Page：7 Pages	SANYO 三洋	SANYO
EMH2409_12	General-Purpose Switching Device Applications 文件：511.54 Kbytes Page：7 Pages	SANYO 三洋	SANYO
EMH2411R	General-Purpose Switching Device Applications 文件：503.81 Kbytes Page：7 Pages	SANYO 三洋	SANYO
EMH2411R_12	General-Purpose Switching Device Applications 文件：503.81 Kbytes Page：7 Pages	SANYO 三洋	SANYO
EMH2412	N-Channel Silicon MOSFET General-Purpose Switching Device Applications 文件：275.12 Kbytes Page：4 Pages	SANYO 三洋	SANYO
EMH2412	N-Channel Power MOSFET 文件：550.81 Kbytes Page：7 Pages	ONSEMI 安森美半导体	ONSEMI
EMH2412	General-Purpose Switching Device Applications 文件：203.94 Kbytes Page：7 Pages	SANYO 三洋	SANYO

EMH2产品属性

类型
描述
型号
EMH2
制造商
ROHM Semiconductor
功能描述
DIVIDER TYPE NPNx2 SM DIGITAL TRANSISTOR EMT5/6
制造商
ROHM Semiconductor
功能描述
DIVIDER TYPE NPNx2 SM DIGITAL TRANSISTOR EMT5/6 - free partial T/R at 500.

EMH2供应商更多...

更新时间：2025-12-27 23:01:00

IC供应商	芯片型号	品牌	批号	封装	库存	备注	价格
深圳市得捷芯城科技有限公司	EMH2	ROHM/罗姆	24+	NA/	3100	优势代理渠道,原装正品,可全系列订货开增值税票	询价
深圳市高捷芯城科技有限公司	EMH2418R	ON/安森美	24+	SOT-383FL	670524	原装正品,现货库存,1小时内发货	询价
深圳市凌旭科技有限公司	EMH2308-TL-E	SANYO	2016+	SOT363	3000	只做原装,假一罚十,公司可开17%增值税发票!	询价
深圳市纳艾斯科技有限公司	EMH2	ROHM	24+	SOT666	80000	只做自己库存全新原装进口正品假一赔百可开13%增	询价
深圳市科芯源微电子有限公司	EMH2T2R	ROHM	25+	EMT6	8000	公司只售原装支持实单	询价
深圳市明嘉莱科技有限公司	EMH2	ED-TECH	24+	(HC354150)	990000	明嘉莱只做原装正品现货	询价
深圳市华睿芯科技有限公司	EMH2	ROHM	24+	SOT666	20000	全新原厂原装，进口正品现货，正规渠道可含税！！	询价
深圳市凯睿晟科技有限公司	EMH2	CJ/长电	21+	SOT-563	150000	长电双数字晶体管优势供应	询价
深圳市恒达亿科技有限公司	EMH2	ROHM	25+	SOT563	3200	全新原装、诚信经营、公司现货销售	询价
深圳市华斯顿科技有限公司	EMH2/H2	ROHM	25+23+	SOT-463	31371	绝对原装正品全新进口深圳现货	询价

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EMH2价格

EMH2产品属性

EMH2供应商更多...

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EMH2规格书下载地址

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EMIF06-10006F1公司原装现货/长期供应

DdatasheetPDF页码索引