丝印代码：H2；General purpose (dual digital transistors)

Features 1)Two DTC144Es chips in a EMT or UMT or SMT package. 2)Mounting possible with EMT3 or UMT3 or SMT3 automatic mounting machines. 3)Transistor elements are independent, eliminating interference. 4)Mounting cost and area can be cut in half. Application INVERTER, INTERFAC

丝印代码：H2；NPN 100mA 50V Complex Digital Transistors

Features 1)Two DTC144Es chips in a EMT or UMT or SMT package. 2)Mounting possible with EMT3 or UMT3 or SMT3 automatic mounting machines. 3)Transistor elements are independent, eliminating interference. 4)Mounting cost and area can be cut in half. Application INVERTER, INTERFAC

丝印代码：H2；NPN 100mA 50V Complex Digital Transistors (Bias Resistor Built-in Transistors)

Features 1)Two DTC144Es chips in a EMT or UMT or SMT package. 2)Mounting possible with EMT3 or UMT3 or SMT3 automatic mounting machines. 3)Transistor elements are independent, eliminating interference. 4)Mounting cost and area can be cut in half. Application INVERTER, INTERFAC

General purpose transistors (dual transistors)

General purpose transistors (dual transistors) FEATURES ● Two DTC144Es chip in a package ● Mounting possible with SOT-563 automatic mounting machines. ● Transistor elements are independent, eliminating interference. ● Mounting cost and area be cut in half.

Dual Digital Transistors (NPNNPN)

Dual Digital Transistors (NPN+NPN) FEATURES ● Two DTC144Es chip in a package ● Mounting possible with SOT-563 automatic mounting machines ● Transistor elements are independent, eliminating interference ● Mounting cost and area be cut in half

Complex Transistor(DTR+DTR)

在超小型封装中内藏2个晶体管。适用于从差动增幅回路到高频水晶振动器，起动器等各种用途。 •分圧型超小型复合三极管;

丝印代码：H2；Dual Digital transistors (built-in resistors)

文件：523.12 Kbytes Page：4 Pages

丝印代码：H2；General purpose (dual digital transistors)

文件：1.25881 Mbytes Page：11 Pages

丝印代码：H2；NPN 100mA 50V Complex Digital Transistors (Bias Resistor Built-in Transistors)

文件：482.03 Kbytes Page：8 Pages

P-Channel Silicon MOSFET General-Purpose Switching Device

General-Purpose Switching Device Applications Features • The EMH2301 incorporates a P-channel MOSFET that feature low ON-resistance and ultrahigh-speed switching, thereby enabling high-density mounting. • 1.8V drive.

P-Channel Silicon MOSFET General-Purpose Switching Device

P-Channel Silicon MOSFET General-Purpose Switching Device Applications Features • The EMH2302 incorporates a P-channel MOSFET that feature low ON-resistance and ultrahigh-speed switching, thereby enabling high-density mounting. • 4V drive.

P-Channel Power MOSFET

Features • The EMH2308 incorporates a P-channel MOSFET that feature low ON-resistance and ultrahigh-speed switching, thereby enabling high-density mounting • 1.8V drive • Halogen free compliance • Protection diode in

General-Purpose Switching Device Applications

General-Purpose Switching Device Applications Features • The EMH2308 incorporates a P-channel MOSFET that feature low ON-resistance and ultrahigh-speed switching, thereby enabling high-density mounting • 1.8V drive • Halogen free compliance • Protection diode in

P 沟道，功率 MOSFET，-20 V，-3 A，85mΩ，双 EMH8

EMH2308 is P-Channel Power MOSFET, -20 V, -3 A, 85 mΩ, Dual EMH8 for General-Purpose Switching Device Applications. low ON-resistance and ultrahigh-speed switching, thereby high-density mounting.\n1.8 V drive\nHalogen Free compliance\nProtection diode in;

P-Channel Power MOSFET

Features • The EMH2308 incorporates a P-channel MOSFET that feature low ON-resistance and ultrahigh-speed switching, thereby enabling high-density mounting • 1.8V drive • Halogen free compliance • Protection diode in

Dual P-Channel Power MOSFET

Features • ON-resistance RDS(on)1=28mΩ(typ.) • Halogen free compliance • 1.8V drive • Protection Diode in

General-Purpose Switching Device Applications

Features • ON-resistance RDS(on)1=28mΩ(typ.) • 1.8V drive • Halogen free compliance • Protection Diode in

Dual P-Channel Power MOSFET

Features • ON-resistance RDS(on)1=28mΩ(typ.) • Halogen free compliance • 1.8V drive • Protection Diode in

N-Channel Silicon MOSFET General-Purpose Switching Device

General-Purpose Switching Device Applications Features • The EMH2401 incorporates an N-channel MOSFET that feature low ON-resistance and ultrahigh-speed switching, thereby enabling high-density mounting. • 1.8V drive.

N-Channel Silicon MOSFET General-Purpose Switching Device

General-Purpose Switching Device Applications Features • The EMH2402 incorporates an N-channel MOSFET that feature low ON-resistance and ultrahigh-speed switching, thereby enabling high-density mounting. • 4V drive.

N-Channel Power MOSFET

Features • Low ON-resistance • Best suited for LiB charging and discharging switch • Common-drain type • 2.5V drive • Protection diode in

N-Channel Silicon MOSFET General-Purpose Switching Device Applications

General-Purpose Switching Device Applications Features • Low ON-resistance • Best suited for LiB charging and discharging switch • Common-drain type • 2.5V drive • Protection diode in

General-Purpose Switching Device Applications

General-Purpose Switching Device Applications Features • ON-resistance RDS(on)1 : 16mΩ(typ.) • Best suited for LiB charging and discharging switch • Common-drain type • 2.5V drive • Halogen free compliance

N-Channel Power MOSFET

Features • Low ON-resistance • Best suited for LiB charging and discharging switch • Common-drain type • 2.5V drive • Protection diode in

N-Channel Power MOSFET

Features • The EMH2408 incorporates a N-channel MOSFET that feature low ON-resistance and ultrahigh-speed switching, thereby enabling high-density mounting • 1.8V drive • Halogen free compliance

N-Channel Silicon MOSFET General-Purpose Switching Device Applications

General-Purpose Switching Device Applications Features • The EMH2408 incorporates a N-channel MOSFET that feature low ON-resistance and ultrahigh-speed switching, thereby enabling high-density mounting • 1.8V drive • Halogen free compliance

N-Channel Power MOSFET

Features • The EMH2408 incorporates a N-channel MOSFET that feature low ON-resistance and ultrahigh-speed switching, thereby enabling high-density mounting • 1.8V drive • Halogen free compliance

N-Channel Power MOSFET

Features • The EMH2409 incorporates a N-channel MOSFET that feature low ON-resistance and ultrahigh-speed switching, thereby enabling high-density mounting • 4V drive • Halogen free compliance • Protection diode in

N-Channel Silicon MOSFET General-Purpose Switching Device Applications

General-Purpose Switching Device Applications Features • The EMH2409 incorporates a N-channel MOSFET that feature low ON-resistance and ultrahigh-speed switching, thereby enabling high-density mounting • 4V drive • Halogen free compliance • Protection diode in

N-Channel Power MOSFET

Features • The EMH2409 incorporates a N-channel MOSFET that feature low ON-resistance and ultrahigh-speed switching, thereby enabling high-density mounting • 4V drive • Halogen free compliance • Protection diode in

N-Channel Power MOSFET

Features • Low ON-resistance • Best suited for LiB charging and discharging switch • Common-drain type • 2.5V drive • Halogen free compliance • Protection diode in

General-Purpose Switching Device Applications

General-Purpose Switching Device Applications Features • Low ON-resistance • Best suited for LiB charging and discharging switch • Common-drain type • 2.5V drive • Halogen free compliance • Protection diode in

丝印代码：T2R；General purpose (dual digital transistors)

Features 1) Two DTC143Z chips in a EMT package. 2) Mounting possible with EMT automatic mounting machines. 3) Transistor elements are independent, eliminating interference. 4) Mounting cost and area can be cut in half. Structure Epitaxial planar type NPN silicon transistor

N-Channel and P-Channel Silicon MOSFETs General-Purpose Switching Device

General-Purpose Switching Device Applications Features • The EMH2601 incorporates an N-channel MOSFET and a P-channel MOSFET that feature low ON-resistance and ultrahigh-speed switching, thereby enabling high-density mounting. • 1.8V drive.

N-Channel and P-Channel Silicon MOSFETs General-Purpose Switching Device

General-Purpose Switching Device Applications Features • The EMH2602 incorporates an N-channel MOSFET and a P-channel MOSFET that feature low ON-resistance and ultrahigh-speed switching, thereby enabling high-density mounting. • 4V drive.

N-Channel and P-Channel Silicon MOSFETs General-Purpose Switching Device

General-Purpose Switching Device Applications Features • The EMH2603 incorporates an N-channel MOSFET and a P-channel MOSFET that feature low ON-resistance and ultrahigh-speed switching, thereby enabling high-density mounting. • Nch: 2.5V drive. • Pch: 1.8V drive.

Power MOSFET

Features • Nch + Pch MOSFET • ON-resistance Nch : RDS(on)1=34mΩ(typ.) Pch : RDS(on)1=65mΩ(typ.) • 1.8V drive • Halogen free compliance

General-Purpose Switching Device Applications

General-Purpose Switching Device Applications Features • Nch + Pch MOSFET • ON-resistance Nch : RDS(on)1=34mΩ(typ.) Pch : RDS(on)1=65mΩ(typ.) • 1.8V drive • Halogen free compliance

Power MOSFET

Features • Nch + Pch MOSFET • ON-resistance Nch : RDS(on)1=34mΩ(typ.) Pch : RDS(on)1=65mΩ(typ.) • 1.8V drive • Halogen free compliance

P-Channel Power MOSFET

P-Channel Power MOSFET –20V, –3A, 85mΩ, Single EMH8 with Schottky Diode Features • Composite type with a P-Channel Sillicon MOSFET and a Schottky Barrier Diode contained in one package facilitating high-density mounting • [MOSFET] • Low ON-resistance • 1.8V drive • [SBD] • Smal

SBD : Schottky Barrier Diode General-Purpose Switching Device Applications

MOSFET : P-Channel Silicon MOSFET SBD : Schottky Barrier Diode Features • Composite type with a P-Channel Sillicon MOSFET and a Schottky Barrier Diode contained in one package facilitating high-density mounting • [MOSFET] • Low ON-resistance • 1.8V drive • [SBD] • Small switching

P-Channel Power MOSFET

P-Channel Power MOSFET –20V, –3A, 85mΩ, Single EMH8 with Schottky Diode Features • Composite type with a P-Channel Sillicon MOSFET and a Schottky Barrier Diode contained in one package facilitating high-density mounting • [MOSFET] • Low ON-resistance • 1.8V drive • [SBD] • Smal

NPN 100mA 50V Complex Digital Transistors (Bias Resistor Built-in Transistors)

Features 1)Two DTC144Es chips in a EMT or UMT or SMT package. 2)Mounting possible with EMT3 or UMT3 or SMT3 automatic mounting machines. 3)Transistor elements are independent, eliminating interference. 4)Mounting cost and area can be cut in half. Application INVERTER, INTERFAC

NPN 100mA 50V Complex Digital Transistors (Bias Resistor Built-in Transistors)

文件：482.03 Kbytes Page：8 Pages

General purpose (dual digital transistors)

文件：1.25881 Mbytes Page：11 Pages

P-Channel Silicon MOSFET General-Purpose Switching Device

General-Purpose Switching Device Applications

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General-Purpose Switching Device Applications

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General-Purpose Switching Device Applications

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General-Purpose Switching Device Applications

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封装/外壳：8-SMD，扁平引线 包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 描述：MOSFET 2N-CH 20V 6A EMH8 分立半导体产品 晶体管 - FET，MOSFET - 阵列

General-Purpose Switching Device Applications

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General-Purpose Switching Device Applications

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General-Purpose Switching Device Applications

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General-Purpose Switching Device Applications

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General-Purpose Switching Device Applications

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General-Purpose Switching Device Applications

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General-Purpose Switching Device Applications

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N-Channel Power MOSFET

文件：550.81 Kbytes Page：7 Pages

N-Channel Silicon MOSFET General-Purpose Switching Device Applications

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