N-Channel Power MOSFET

Features • Low ON-resistance • Best suited for LiB charging and discharging switch • Common-drain type • 2.5V drive • Protection diode in

N-Channel Silicon MOSFET General-Purpose Switching Device Applications

General-Purpose Switching Device Applications Features • Low ON-resistance • Best suited for LiB charging and discharging switch • Common-drain type • 2.5V drive • Protection diode in

General-Purpose Switching Device Applications

文件：508.3 Kbytes Page：7 Pages

General-Purpose Switching Device Applications

General-Purpose Switching Device Applications Features • ON-resistance RDS(on)1 : 16mΩ(typ.) • Best suited for LiB charging and discharging switch • Common-drain type • 2.5V drive • Halogen free compliance

N-Channel Power MOSFET

Features • Low ON-resistance • Best suited for LiB charging and discharging switch • Common-drain type • 2.5V drive • Protection diode in

General-Purpose Switching Device Applications

文件：508.3 Kbytes Page：7 Pages

General-Purpose Switching Device Applications

封装/外壳：8-SMD，扁平引线 包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 描述：MOSFET 2N-CH 20V 6A EMH8 分立半导体产品 晶体管 - FET，MOSFET - 阵列

封装/外壳：8-SMD，扁平引线 包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 描述：MOSFET 2N-CH 20V 6A EMH8 分立半导体产品 晶体管 - FET，MOSFET - 阵列

MICROWAVE POWER GaAs FET?

DESCRIPTION The MGF2407A, power GaAs FET with an N-channel schottky gate, is designed for use in S to Ku band amplifiers. APPLICATION S to Ku band power amplifiers.

THREE TERMINAL LOW DROPOUT VOLTAGE REGULATOR

SEMICONDUCTOR SELECTION GUIDE Microcomputer IC Memory Semi-Custom IC Particular Purpose IC General Purpose Linear IC Transistor / Diode / Thyristor Microwave Device / Consumer Use High Frequency Device Optical Device Packages Index (Quick Reference by Type N

Monolithic Triple 7.5 nS CRT Driver

文件：361.99 Kbytes Page：9 Pages

Monolithic Triple 7.5 nS CRT Driver

文件：361.99 Kbytes Page：9 Pages

SINGLE-SUPLLY DUAL COMPARATOR

文件：184.98 Kbytes Page：5 Pages