位置：首页 > IC中文资料第8285页 > EMH2301
| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
EMH2301 | P-Channel Silicon MOSFET General-Purpose Switching Device General-Purpose Switching Device Applications Features • The EMH2301 incorporates a P-channel MOSFET that feature low ON-resistance and ultrahigh-speed switching, thereby enabling high-density mounting. • 1.8V drive. | SANYO 三洋 |   | |
EMH2301 | P-Channel Silicon MOSFET General-Purpose Switching Device | ONSEMI 安森美半导体 | | |
Silicon NPN Transistor High Voltage Horizontal Output Description: The NTE2301 is a silicon NPN power transistor in a TO218 type package designed for use in large screen deflection circuits. Features: • Collector–Emitter Voltage: VCEX = 1500V • Glassivated Base–Collector Junction • Safe Operating Area @ 50µs = 20A, 400V • Switchin | NTE | | ||
Reflective Photosensor 文件：49.97 Kbytes Page：2 Pages | PANASONIC 松下 | | ||
PLLatinumTM 160 MHz Frequency Synthesizer for RF Personal Communications 文件：225.65 Kbytes Page：14 Pages | NSC 国半 | | ||
PLLatinumTM 160 MHz Frequency Synthesizer for RF Personal Communications 文件：225.65 Kbytes Page：14 Pages | NSC 国半 | | ||
EXCALIBUR 3-STATE-OUTPUT WIDE-BANDWIDTH POWER OPERATIONAL AMPLIFIER 文件：324.91 Kbytes Page：22 Pages | TI 德州仪器 | |
EMH2301产品属性
- 类型
描述
- 型号
EMH2301
- 制造商
SANYO
- 制造商全称
Sanyo Semicon Device
- 功能描述
P-Channel Silicon MOSFET General-Purpose Switching Device
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
onsemi(安森美) |
25+ |
- |
20948 |
样件支持,可原厂排单订货! |
|||
onsemi(安森美) |
25+ |
- |
21000 |
正规渠道,免费送样。支持账期,BOM一站式配齐 |
|||
SANYO |
22+ |
EMH8 |
20000 |
公司只有原装 品质保证 |
|||
SANYO |
06+ |
EMH8 |
3000 |
一级代理,专注军工、汽车、医疗、工业、新能源、电力 |
|||
三年内 |
1983 |
只做原装正品 |
|||||
SANYO |
23+ |
EMH8 |
3000 |
全新原装正品现货,支持订货 |
EMH2301规格书下载地址
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DdatasheetPDF页码索引
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