N?륝hannel Logic Level Enhancement Mode Field Effect Transistor

Product Summary: BVDSS 250V RDSON (MAX.) 1.7Ω ID 3.0A UIS, Rg 100 Tested Pb‐Free Lead Plating & Halogen Free

N?륝hannel Logic Level Enhancement Mode Field Effect Transistor

Product Summary: BVDSS 250V RDSON (MAX.) 1.7Ω ID 3.0A UIS, Rg 100 Tested Pb‐Free Lead Plating & Halogen Free

N?륝hannel Logic Level Enhancement Mode Field Effect Transistor

Product Summary: BVDSS 250V RDSON (MAX.) 1.7Ω ID 0.4A Rg 100 Tested Pb‐Free Lead Plating & Halogen Free

N-Channel UniFETTM MOSFET 250 V, 6.2 A, 550 mΩ

Features • RDS(on) = 430 mΩ (Typ.) @ VGS = 10 V, ID = 3.1 A • Low Gate Charge (Typ. 12 nC) • Low Crss (Typ. 8 pF) • 100% Avalanche Tested • Improved dv/dt Capability • ESD Improved Capability • RoHS Compliant Applications • LCD/LED/PDP TV • Consumer Appliances • Lighting • Uninte

N-Channel UniFET MOSFET

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