N?륝hannel Logic Level Enhancement Mode Field Effect Transistor

Product Summary: BVDSS 500V RDSON (MAX.) 1.3Ω ID 7A UIS, 100 Tested Pb‐Free Lead Plating

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current –ID=6.5A@ TC=25℃ ·Drain Source Voltage- : VDSS=500V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 0.85Ω(Max)@VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-DC co

N-CHANNEL SILICON POWER MOSFET

Super FAP-E3 series Features • Maintains both low power loss and low noise • Lower RDS(on) characteristic • More controllable switching dv/dt by gate resistance • Smaller VGS ringing waveform during switching • Narrow band of the gate threshold voltage (3.0±0.5V) • High aval

N-CHANNEL SILICON POWER MOSFET

文件：514.809 Kbytes Page：5 Pages

N-CHANNEL SILICON POWER MOSFET

文件：476.14 Kbytes Page：5 Pages

N-CHANNEL SILICON POWER MOSFET

文件：468.3 Kbytes Page：5 Pages