N?륝hannel Logic Level Enhancement Mode Field Effect Transistor

Product Summary: BVDSS 600V RDSON (MAX.) 1.55Ω ID 6A UIS, 100 Tested Pb‐Free Lead Plating & Halogen Free

N?륝hannel Logic Level Enhancement Mode Field Effect Transistor

Product Summary: BVDSS 600V RDSON (MAX.) 1.55Ω ID 6A UIS, 100 Tested Pb‐Free Lead Plating & Halogen Free

N?륝hannel Logic Level Enhancement Mode Field Effect Transistor

Product Summary: BVDSS 600V RDSON (MAX.) 1.55Ω ID 6A UIS, 100 Tested Pb‐Free Lead Plating & Halogen Free

Power MOSFETs-N Channel

Power MOSFETs-N Channel

Power MOSFETs-N Channel

Fast IGBT in NPT-technology

Fast IGBT in NPT-technology • 75 lower Eoff compared to previous generation combined with low conduction losses • Short circuit withstand time – 10 µs • Designed for: - Motor controls - Inverter • NPT-Technology for 600V applications offers: - very tight parameter distribution

Fast IGBT in NPT-technology with soft, fast recovery anti-parallel EmCon diode

•75 lower Eoffcompared to previous generation combined with low conduction losses •Short circuit withstand time – 10 µs •Designed for: Motor controls, Inverter •NPT-Technology for 600V applications offers: - very tight parameter distribution - high ruggedness, temperature stable beh

POWER FIELD EFFECT TRANSISTOR

文件：191.5 Kbytes Page：6 Pages

Fast S-IGBT in NPT-technology with soft, fast recovery anti-parallel EmCon diode

文件：278.56 Kbytes Page：13 Pages

Fast S-IGBT in NPT-technology with soft, fast recovery anti-parallel EmCon diode

文件：278.56 Kbytes Page：13 Pages