Closed Loop Fan Controller

The EMC2106 is an SMBus compliant fan controller with up to five (up to 4 external and 1 internal) temperature channels. The fan drivers can be operated using two methods each with two modes. The methods include an RPM based Fan Speed Control Algorithm and a direct drive setting. The modes include m Features\n• Two Programmable Fan Control circuits \n• 4-wire fan compatible\n• High speed PWM (26khz)\n• Low speed PWM (9.5Hz - 2240Hz)\n• 600mA, 5V, High Side Fan Driver\n• Optional fan aging detection\n• 1mA Linear DAC Fan Driver\n• RPM based fan control algorithm \n• 2% accuracy from 500RPM t;

Dual RPM-Based Linear Fan Controller with Hardware Thermal Shutdown

文件：1.82679 Mbytes Page：106 Pages

Dual RPM-Based Linear Fan Controller with Hardware Thermal Shutdown

文件：2.19494 Mbytes Page：106 Pages

Dual RPM-Based Linear Fan Controller with Hardware Thermal Shutdown

文件：2.19494 Mbytes Page：106 Pages

封装/外壳：28-VFQFN 裸露焊盘 功能：风扇控制，温度监控器 包装：管件 描述：IC RPM FAN CTRLR 28VQFN 集成电路（IC） 热管理

N-Channel Enhancement-Mode Vertical DMOS FETs

Advanced DMOS Technology These enhancement-mode (normally-off) transistors utilize a vertical DMOS structure and Supertex’s well-proven silicon-gate manufacturing process. This combination produces devices with the power handling capabilities of bipolar transistors and with the high input imped

L-BAND PA DRIVER AMPLIFIER

DESCRIPTION The µPG2106TB and µPG2110TB are GaAs MMIC for PA driver amplifier with variable gain function which were developed for PDC (Personal Digital Cellular in Japan) and another L-band application. The device can operate with 3.0 V, having the high gain and low distortion. The µPG2106TB is

L-BAND PA DRIVER AMPLIFIER

DESCRIPTION The µPG2106TB and µPG2110TB are GaAs MMIC for PA driver amplifier with variable gain function which were developed for PDC (Personal Digital Cellular in Japan) and another L-band application. The device can operate with 3.0 V, having the high gain and low distortion. The µPG2106TB is

N-Channel Enhancement-Mode Vertical DMOS FETs

Advanced DMOS Technology These enhancement-mode (normally-off) transistors utilize a vertical DMOS structure and Supertex’s well-proven silicon-gate manufacturing process. This combination produces devices with the power handling capabilities of bipolar transistors and with the high input impedan

P-Channel Enhancement-Mode Vertical DMOS FETs

Advanced DMOS Technology These enhancement-mode (normally-off) transistors utilize a vertical DMOS structure and Supertex’s well-proven silicon-gate manufacturing process. This combination produces devices with the power handling capabilities of bipolar transistors and with the high input impeda