Analog and Interface Product Selector Guide

General Description MCP9700/9700A and MCP9701/9701A sensors with Linear Active Thermistor Integrated Circuit (IC) comprise a family of analog temperature sensors that convert temperature to analog voltage. The low-cost, low-power sensors feature an accuracy of ±2°C from 0°C to +70°C (MCP9700A/97

Three Channel Temperature Sensor with Shutdown

The EMC1423 is a high accuracy, low cost, System Management Bus (SMBus) temperature sensors. Advanced features such as Resistance Error Correction (REC), Beta Compensation (to support CPU diodes requiring the BJT/transistor models) and automatic diode type detection combine to provide a robust solut ±1°C Accuracy\n0.125°C resolution\nHardware configured shutdown from 77°C to 112°C\nSupports diodes requiring BJT/Transistor model\nAutomatically determines external diode type and optimal settings\nResistance Error Correction\nProgrammable temperature limits for ALERT#\nSupports up to 2.2nF diode f;

Analog & Interface Product Selector Guide

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1째C Temperature Sensor with Hardware Thermal Shutdown

文件：766.95 Kbytes Page：45 Pages

1째C Temperature Sensor with Hardware Thermal Shutdown

文件：812.02 Kbytes Page：51 Pages

1째C Temperature Sensor with Hardware Thermal Shutdown

文件：812.02 Kbytes Page：51 Pages

封装/外壳：10-TFSOP，10-MSOP（0.118"，3.00mm 宽） 包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 描述：SENSOR DIGITAL -40C-125C 10MSOP 传感器，变送器 温度传感器 - 模拟和数字输出

1째C Temperature Sensor with Hardware Thermal Shutdown

文件：766.95 Kbytes Page：45 Pages

EPITAXIAL PLANAR PNP TRANSISTOR (SWITCHING HAMMER DRIVER, PULSE MOTOR DRIVER)

SWITCHING APPLICATIONS. HAMMER DRIVER, PULSE MOTOR DRIVER APPLICATIONS. FEATURES • High DC Current Gain : hFE=1000(Min.) at VCE=-3V, IC=-3A. • High Collector Breakdown Voltage : VCEO=-120V (Min.) • Complementary to KTD1413.

5-Dot Red/Green LED Level Meter

SMALL SIGNAL GaAs FET?

DESCRIPTION The MGF1423B, low-noise GaAs FET with an N-channel Schottky gate, is designed for use in S to Ku band amplifiers. FEATURES ● High linear power gain GLP = 11 dB (TYP.) @ f = 12 GHz ● High output power at 1 dB gain compression P1dB = 13dBm (TYP.) @ f = 12 GHz ● High reliabil

RF & MICROWAVE TRANSISTORS 800-960MHz BASE STATION APPLICATIONS

DESCRIPTION The SD1423 is a gold metallization epitaxial silicon NPN planar transistor using diffused emitter ballast resistors for high linearity Class AB operation for cellular base station applications. The SD1423 is designed as a medium power output device or as the driver for the SD1424. ■

HIGH PERFORMANCE 4K X 4 CMOS STATIC RAM

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