| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
N?륝hannel Logic Level Enhancement Mode Field Effect Transistor Product Summary: BVDSS 60V RDSON (MAX.) 45mΩ ID 18A UIS, Rg 100 Tested Pb‐Free Lead Plating & Halogen Free | EXCELLIANCE 杰力科技 |   | ||
N?륝hannel Logic Level Enhancement Mode Field Effect Transistor Product Summary: BVDSS 60V RDSON (MAX.) 45mΩ ID 6.5A UIS, Rg 100 Tested Pb‐Free Lead Plating & Halogen Free | EXCELLIANCE 杰力科技 | | ||
Power MOSFETs-N Channel | EXCELLIANCE 杰力科技 | | ||
Power MOSFETs-N Channel | EXCELLIANCE 杰力科技 | | ||
45A, 60V, Avalanche Rated N-Channel Enhancement-Mode Power MOSFETs These are N-Channel enhancement mode silicon gate power field effect transistors. They are advanced power MOSFETs designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche mode of operation. All of these power MOSFETs are designed for applications such as | FAIRCHILD 仙童半导体 | | ||
45A, 60V, 0.028 Ohm, N-Channel Power MOSFETs These are N-Channel enhancement mode silicon gate power field effect transistors. They are advanced power MOSFETs designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche mode of operation. All of these power MOSFETs are designed for applications such as | INTERSIL | | ||
45A, 60V, Avalanche Rated N-Channel Enhancement-Mode Power MOSFETs These are N-Channel enhancement mode silicon gate power field effect transistors. They are advanced power MOSFETs designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche mode of operation. All of these power MOSFETs are designed for applications such as | FAIRCHILD 仙童半导体 | | ||
45A, 60V, 0.028 Ohm, N-Channel Power MOSFETs These are N-Channel enhancement mode silicon gate power field effect transistors. They are advanced power MOSFETs designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche mode of operation. All of these power MOSFETs are designed for applications such as | INTERSIL | | ||
45A, 60V, 0.028 Ohm, Logic Level N-Channel Power MOSFETs These are N-Channel enhancement mode power MOSFETs manufactured using the latest manufacturing process technology. This process, which uses feature sizes approaching those of LSI circuits, gives optimum utilization of silicon, resulting in outstanding performance. They were designed for use in app | INTERSIL | |
EMB45N06产品属性
- 类型
描述
- Channel：
Single N
- BVDSS(V)：
60
- VGS(±V)：
20
- ID(A)：
18
- RDS(ON)(10V) Max.(mΩ)：
45
- RDS(ON)(5V) Max.(mΩ)：
70
- RDS(ON)(4.5V) Max.(mΩ)：
- RDS(ON)(2.5V) Max.(mΩ)：
- Qg(10V)Typ.(nC)：
18
- CissTyp.(pF)：
945
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
EMC/杰力 |
2026+ |
TO-252-2 |
379 |
原装正品 假一罚十! |
|||
EMC/杰力 |
2511 |
TO252-2 |
360000 |
电子元器件采购降本30%!原厂直采,砍掉中间差价 |
|||
EMC/杰力 |
25+ |
TO-252 |
665 |
全新原装正品支持含税 |
|||
EMC |
23+ |
SOP8 |
3000 |
一级代理原厂VIP渠道,专注军工、汽车、医疗、工业、 |
|||
EMC |
22+ |
DFN |
20000 |
公司只有原装 品质保证 |
|||
Displaytech |
24+ |
SMD |
17900 |
显示开发工具 |
|||
ELPIDA |
2450+ |
BGA |
8850 |
只做原装正品假一赔十为客户做到零风险!! |
|||
EMB |
新年份 |
TO-252 |
33288 |
原装正品现货,实单带TP来谈! |
|||
原厂 |
2023+ |
模块 |
600 |
专营模块,继电器,公司原装现货 |
|||
EMC |
19+ |
DFN5*6-8 |
3359 |
全新 发货1-2天 |
EMB45N06规格书下载地址
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DdatasheetPDF页码索引
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