小信号数字三极管

General purpose (dual digital transistors)

Features 1) Two DTA123J chips in a EMT or UMT or SMT package. 2) Mounting possible with EMT3 or UMT3 or SMT3 automatic mounting machines. 3) Transistor elements are independent, eliminating interference. 4) Mounting cost and area can be cut in half. Application INVERTER, INTERFACE, DRIVE

PNP -100mA -50V Complex Digital Transistors

lFeatures 1) Built-In Biasing Resistors. 2) Two DTA123J chips in one package. 3) Built-in bias resistors enable the configuration of an inverter circuit without connecting external input resistors (see inner circuit). 4) The bias resistors consist of thin-film resistors with complete isolat

General purpose (dual digital transistors)

Features 1) Two DTA114E chips in a EMT or UMT or SMT package. 2) Mounting possible with EMT3 or UMT3 or SMT3 automatic mounting machines. 3) Transistor elements are independent, eliminating interference. 4) Mounting cost and area can be cut in half.

PNP -100mA -50V Complex Digital Transistors

Features 1) Two DTA114E chips in a EMT or UMT or SMT package. 2) Mounting possible with EMT3 or UMT3 or SMT3 automatic mounting machines. 3) Transistor elements are independent, eliminating interference. 4) Mounting cost and area can be cut in half.

General purpose Dual digital transistors

Features 1) Two DTA114E chips in a EMT or UMT or SMT package. 2) Mounting possible with EMT3 or UMT3 or SMT3 automatic mounting machines. 3) Transistor elements are independent, eliminating interference. 4) Mounting cost and area can be cut in half.

Dual N?륝hannel Logic Level Enhancement Mode Field Effect Transistor

Product Summary: BVDSS 30V RDSON (MAX.) 11mΩ ID 12A UIS, Rg 100 Tested Pb‐Free Lead Plating & Halogen Free

General purpose (Dual digital transistors)

lFeatures 1)Two DTA114E chips in a EMT6 package. 2)Mounting possible with EMT3 automatic mounting machines. 3)Transistor elements are independent, eliminating interference. 4)Mounting cost and area can be cut in half. lApplication INVERTER, INTERFACE, DRIVER

General purpose (Dual digital transistors)

lFeatures 1)Two DTA114E chips in a EMT6 package. 2)Mounting possible with EMT3 automatic mounting machines. 3)Transistor elements are independent, eliminating interference. 4)Mounting cost and area can be cut in half. lApplication INVERTER, INTERFACE, DRIVER

Dual Asymmetric N?륝hannel Logic Level Enhancement Mode Field Effect Transistor

Product Summary: N‐CH‐Q1 N‐CH‐Q2 BVDSS 30V 30V RDSON (MAX.) 15.5mΩ 12.5mΩ ID 9A 10A UIS, Rg 100 Tested Pb‐Free Lead Plating & Halogen Free

Dual N?륝hannel Logic Level Enhancement Mode Field Effect Transistor

Product Summary: N‐CH‐Q1 N‐CH‐Q2 BVDSS 30V 30V RDSON (MAX.) 12mΩ 17mΩ ID 12A 10A UIS, Rg 100 Tested Pb‐Free Lead Plating & Halogen Free

N?륝hannel Logic Level Enhancement Mode Field Effect Transistor

Product Summary: BVDSS 30V RDSON (MAX.) 12mΩ ID 25A UIS, Rg 100 Tested Pb‐Free Lead Plating & Halogen Free

N?륝hannel Logic Level Enhancement Mode Field Effect Transistor

Product Summary: BVDSS 30V RDSON (MAX.) 12mΩ ID 12A UIS, Rg 100 Tested Pb‐Free Lead Plating & Halogen Free

N?륝hannel Logic Level Enhancement Mode Field Effect Transistor

Product Summary: BVDSS 30V RDSON (MAX.) 11.5mΩ ID 25A UIS, Rg 100 Tested Pb‐Free Lead Plating & Halogen Free

N?륝hannel Logic Level Enhancement Mode Field Effect Transistor

Product Summary: BVDSS 30V RDSON (MAX.) 11.5mΩ ID 18.5A UIS, Rg 100 Tested Pb‐Free Lead Plating & Halogen Free

N?륝hannel Logic Level Enhancement Mode Field Effect Transistor

Product Summary: BVDSS 30V RDSON (MAX.) 11.5mΩ ID 9A UIS, Rg 100 Tested Pb‐Free Lead Plating & Halogen Free

N?륝hannel Logic Level Enhancement Mode Field Effect Transistor

Product Summary: BVDSS 40V RDSON (MAX.) 12mΩ ID 30A UIS, Rg 100 Tested Pb‐Free Lead Plating & Halogen Free

N?륝hannel Logic Level Enhancement Mode Field Effect Transistor

Product Summary: BVDSS 40V RDSON (MAX.) 12.8mΩ ID 18A UIS, Rg 100 Tested Pb‐Free Lead Plating & Halogen Free

N?륝hannel Logic Level Enhancement Mode Field Effect Transistor

Product Summary: BVDSS 100V RDSON (MAX.) 12mΩ ID 12A UIS, Rg 100 Tested Pb‐Free Lead Plating & Halogen Free

N?륝hannel Logic Level Enhancement Mode Field Effect Transistor

Product Summary: BVDSS 100V RDSON (MAX.) 12mΩ ID 50A UIS, Rg 100 Tested Pb‐Free Lead Plating & Halogen Free

N?륝hannel Logic Level Enhancement Mode Field Effect Transistor

Product Summary: BVDSS 100V RDSON (MAX.) 12mΩ ID 32A UIS, Rg 100 Tested Pb‐Free Lead Plating & Halogen Free

P?륝hannel Logic Level Enhancement Mode Field Effect Transistor

Product Summary: BVDSS ‐30V RDSON (MAX.)(VGS=‐10V) 10mΩ ID ‐13A UIS, Rg 100 Tested Pb‐Free Lead Plating & Halogen Free

P?륝hannel Logic Level Enhancement Mode Field Effect Transistor

Product Summary: BVDSS ‐30V RDSON (MAX.) 12mΩ ID ‐21A UIS, Rg 100 Tested Pb‐Free Lead Plating & Halogen Free

P?륝hannel Logic Level Enhancement Mode Field Effect Transistor

Product Summary: BVDSS ‐40V RDSON (MAX.) 12.6mΩ ID ‐25A UIS, Rg 100 Tested Pb‐Free Lead Plating & Halogen Free

EMB1412 MOSFET Gate Driver

1 Features 1• Compound CMOS and Bipolar Outputs Reduce Output Current Variation • 7 A Sink/3 A Source Current • Fast Propagation Times (25 ns Typical) • Fast Rise and Fall Times (14 ns/12 ns Rise/Fall with 2 nF Load) • Inverting and Non-Inverting Inputs Provide Either Configuration with a

EMB1412 MOSFET Gate Driver

1 Features 1• Compound CMOS and Bipolar Outputs Reduce Output Current Variation • 7 A Sink/3 A Source Current • Fast Propagation Times (25 ns Typical) • Fast Rise and Fall Times (14 ns/12 ns Rise/Fall with 2 nF Load) • Inverting and Non-Inverting Inputs Provide Either Configuration with a

EMB1412 MOSFET Gate Driver

1 Features 1• Compound CMOS and Bipolar Outputs Reduce Output Current Variation • 7 A Sink/3 A Source Current • Fast Propagation Times (25 ns Typical) • Fast Rise and Fall Times (14 ns/12 ns Rise/Fall with 2 nF Load) • Inverting and Non-Inverting Inputs Provide Either Configuration with a

EMB1412 MOSFET Gate Driver

1 Features 1• Compound CMOS and Bipolar Outputs Reduce Output Current Variation • 7 A Sink/3 A Source Current • Fast Propagation Times (25 ns Typical) • Fast Rise and Fall Times (14 ns/12 ns Rise/Fall with 2 nF Load) • Inverting and Non-Inverting Inputs Provide Either Configuration with a

EMB1412 MOSFET Gate Driver

1 Features 1• Compound CMOS and Bipolar Outputs Reduce Output Current Variation • 7 A Sink/3 A Source Current • Fast Propagation Times (25 ns Typical) • Fast Rise and Fall Times (14 ns/12 ns Rise/Fall with 2 nF Load) • Inverting and Non-Inverting Inputs Provide Either Configuration with a

EMB1412 MOSFET Gate Driver

1 Features 1• Compound CMOS and Bipolar Outputs Reduce Output Current Variation • 7 A Sink/3 A Source Current • Fast Propagation Times (25 ns Typical) • Fast Rise and Fall Times (14 ns/12 ns Rise/Fall with 2 nF Load) • Inverting and Non-Inverting Inputs Provide Either Configuration with a

EMB1412 MOSFET Gate Driver

1 Features 1• Compound CMOS and Bipolar Outputs Reduce Output Current Variation • 7 A Sink/3 A Source Current • Fast Propagation Times (25 ns Typical) • Fast Rise and Fall Times (14 ns/12 ns Rise/Fall with 2 nF Load) • Inverting and Non-Inverting Inputs Provide Either Configuration with a

EMB1412 MOSFET Gate Driver

1 Features 1• Compound CMOS and Bipolar Outputs Reduce Output Current Variation • 7 A Sink/3 A Source Current • Fast Propagation Times (25 ns Typical) • Fast Rise and Fall Times (14 ns/12 ns Rise/Fall with 2 nF Load) • Inverting and Non-Inverting Inputs Provide Either Configuration with a

EMB1412 MOSFET Gate Driver

1 Features 1• Compound CMOS and Bipolar Outputs Reduce Output Current Variation • 7 A Sink/3 A Source Current • Fast Propagation Times (25 ns Typical) • Fast Rise and Fall Times (14 ns/12 ns Rise/Fall with 2 nF Load) • Inverting and Non-Inverting Inputs Provide Either Configuration with a

EMB1412 MOSFET Gate Driver

1 Features 1• Compound CMOS and Bipolar Outputs Reduce Output Current Variation • 7 A Sink/3 A Source Current • Fast Propagation Times (25 ns Typical) • Fast Rise and Fall Times (14 ns/12 ns Rise/Fall with 2 nF Load) • Inverting and Non-Inverting Inputs Provide Either Configuration with a

EMB1412 MOSFET Gate Driver

1 Features 1• Compound CMOS and Bipolar Outputs Reduce Output Current Variation • 7 A Sink/3 A Source Current • Fast Propagation Times (25 ns Typical) • Fast Rise and Fall Times (14 ns/12 ns Rise/Fall with 2 nF Load) • Inverting and Non-Inverting Inputs Provide Either Configuration with a

EMB1412 MOSFET Gate Driver

1 Features 1• Compound CMOS and Bipolar Outputs Reduce Output Current Variation • 7 A Sink/3 A Source Current • Fast Propagation Times (25 ns Typical) • Fast Rise and Fall Times (14 ns/12 ns Rise/Fall with 2 nF Load) • Inverting and Non-Inverting Inputs Provide Either Configuration with a

EMB1412 MOSFET Gate Driver

1 Features 1• Compound CMOS and Bipolar Outputs Reduce Output Current Variation • 7 A Sink/3 A Source Current • Fast Propagation Times (25 ns Typical) • Fast Rise and Fall Times (14 ns/12 ns Rise/Fall with 2 nF Load) • Inverting and Non-Inverting Inputs Provide Either Configuration with a

EMB1428Q Switch Matrix Gate Driver

1FEATURES 2• 60V Maximum Stack Operating Voltage • Twelve (12) Floating Gate Drivers • SPI Bus Interface (for Charge/discharge Commands and Fault Reporting) • Low Power Sleep Mode • EMB1428Q is an Automotive Grade Product that is AEC-Q100 Grade 1 Qualified (-40°C to +125°C Operating Juncti

EMB1428Q Switch Matrix Gate Driver

1FEATURES 2• 60V Maximum Stack Operating Voltage • Twelve (12) Floating Gate Drivers • SPI Bus Interface (for Charge/discharge Commands and Fault Reporting) • Low Power Sleep Mode • EMB1428Q is an Automotive Grade Product that is AEC-Q100 Grade 1 Qualified (-40°C to +125°C Operating Juncti

EMB1428Q Switch Matrix Gate Driver

1FEATURES 2• 60V Maximum Stack Operating Voltage • Twelve (12) Floating Gate Drivers • SPI Bus Interface (for Charge/discharge Commands and Fault Reporting) • Low Power Sleep Mode • EMB1428Q is an Automotive Grade Product that is AEC-Q100 Grade 1 Qualified (-40°C to +125°C Operating Juncti

EMB1428Q Switch Matrix Gate Driver

1FEATURES 2• 60V Maximum Stack Operating Voltage • Twelve (12) Floating Gate Drivers • SPI Bus Interface (for Charge/discharge Commands and Fault Reporting) • Low Power Sleep Mode • EMB1428Q is an Automotive Grade Product that is AEC-Q100 Grade 1 Qualified (-40°C to +125°C Operating Juncti

EMB1428Q Switch Matrix Gate Driver

1FEATURES 2• 60V Maximum Stack Operating Voltage • Twelve (12) Floating Gate Drivers • SPI Bus Interface (for Charge/discharge Commands and Fault Reporting) • Low Power Sleep Mode • EMB1428Q is an Automotive Grade Product that is AEC-Q100 Grade 1 Qualified (-40°C to +125°C Operating Juncti

EMB1428Q Switch Matrix Gate Driver

1FEATURES 2• 60V Maximum Stack Operating Voltage • Twelve (12) Floating Gate Drivers • SPI Bus Interface (for Charge/discharge Commands and Fault Reporting) • Low Power Sleep Mode • EMB1428Q is an Automotive Grade Product that is AEC-Q100 Grade 1 Qualified (-40°C to +125°C Operating Juncti

EMB1428Q Switch Matrix Gate Driver

1FEATURES 2• 60V Maximum Stack Operating Voltage • Twelve (12) Floating Gate Drivers • SPI Bus Interface (for Charge/discharge Commands and Fault Reporting) • Low Power Sleep Mode • EMB1428Q is an Automotive Grade Product that is AEC-Q100 Grade 1 Qualified (-40°C to +125°C Operating Juncti

EMB1499Q Bidirectional Current DC-DC Controller

1FEATURES • 60-V Maximum Stack Operating Voltage • Bidirectional Balancing Current • Fully Synchronous Operation • Active Clamp Signal • 250-kHz Switching Frequency • Fault Detection Includes Two Separate UVLO Cells (One for Each External Supply), Primary and Secondary Side Current Limit,

EMB1499Q Bidirectional Current DC-DC Controller

1FEATURES • 60-V Maximum Stack Operating Voltage • Bidirectional Balancing Current • Fully Synchronous Operation • Active Clamp Signal • 250-kHz Switching Frequency • Fault Detection Includes Two Separate UVLO Cells (One for Each External Supply), Primary and Secondary Side Current Limit,

EMB1499Q Bidirectional Current DC-DC Controller

1FEATURES • 60-V Maximum Stack Operating Voltage • Bidirectional Balancing Current • Fully Synchronous Operation • Active Clamp Signal • 250-kHz Switching Frequency • Fault Detection Includes Two Separate UVLO Cells (One for Each External Supply), Primary and Secondary Side Current Limit,

EMB1499Q Bidirectional Current DC-DC Controller

1FEATURES • 60-V Maximum Stack Operating Voltage • Bidirectional Balancing Current • Fully Synchronous Operation • Active Clamp Signal • 250-kHz Switching Frequency • Fault Detection Includes Two Separate UVLO Cells (One for Each External Supply), Primary and Secondary Side Current Limit,

EMB1499Q Bidirectional Current DC-DC Controller

1FEATURES • 60-V Maximum Stack Operating Voltage • Bidirectional Balancing Current • Fully Synchronous Operation • Active Clamp Signal • 250-kHz Switching Frequency • Fault Detection Includes Two Separate UVLO Cells (One for Each External Supply), Primary and Secondary Side Current Limit,

EMB1499Q Bidirectional Current DC-DC Controller

1FEATURES • 60-V Maximum Stack Operating Voltage • Bidirectional Balancing Current • Fully Synchronous Operation • Active Clamp Signal • 250-kHz Switching Frequency • Fault Detection Includes Two Separate UVLO Cells (One for Each External Supply), Primary and Secondary Side Current Limit,

EMB1499Q Bidirectional Current DC-DC Controller

1FEATURES • 60-V Maximum Stack Operating Voltage • Bidirectional Balancing Current • Fully Synchronous Operation • Active Clamp Signal • 250-kHz Switching Frequency • Fault Detection Includes Two Separate UVLO Cells (One for Each External Supply), Primary and Secondary Side Current Limit,

N?륝hannel Logic Level Enhancement Mode Field Effect Transistor

Product Summary: BVDSS 100V RDSON (MAX.) 14.6mΩ ID 62A UIS, Rg 100 Tested Pb‐Free Lead Plating & Halogen Free

N?륝hannel Logic Level Enhancement Mode Field Effect Transistor

Product Summary: BVDSS 100V RDSON (MAX.) 14.6mΩ ID 40A UIS, Rg 100 Tested Pb‐Free Lead Plating & Halogen Free

N?륝hannel Logic Level Enhancement Mode Field Effect Transistor

Product Summary: BVDSS 100V RDSON (MAX.) 16.5mΩ ID 44A UIS, Rg 100 Tested Pb‐Free Lead Plating & Halogen Free

P?륝hannel Logic Level Enhancement Mode Field Effect Transistor

Product Summary: BVDSS ‐30V RDSON (MAX.) 14mΩ ID ‐12A UIS, Rg 100 Tested Pb‐Free Lead Plating & Halogen Free

P-Channel Logic Level Enhancement Mode Field Effect Transistor

Product Summary: BVDSS -30V RDSON (MAX.) 14mΩ ID -20A P Channel MOSFET UIS, Rg 100% Tested Pb-Free Lead Plating & Halogen Free

N?륝hannel Logic Level Enhancement Mode Field Effect Transistor

Product Summary: BVDSS 30V RDSON (MAX.) 14mΩ ID 25A UIS, Rg 100 Tested Pb‐Free Lead Plating & Halogen Free

N?륝hannel Logic Level Enhancement Mode Field Effect Transistor

Product Summary: BVDSS 30V RDSON (MAX.) 15mΩ ID 8A UIS, Rg 100 Tested Pb‐Free Lead Plating & Halogen Free

N?륝hannel Logic Level Enhancement Mode Field Effect Transistor

Product Summary: BVDSS 60V RDSON (MAX.) 16mΩ ID 42A UIS, Rg 100 Tested Pb‐Free Lead Plating & Halogen Free

N?륝hannel Logic Level Enhancement Mode Field Effect Transistor

Product Summary: BVDSS 60V RDSON (MAX.) 16mΩ ID 6.7A UIS, Rg 100 Tested Pb‐Free Lead Plating & Halogen Free