N?륝hannel Logic Level Enhancement Mode Field Effect Transistor

Product Summary: BVDSS 100V RDSON (MAX.) 12mΩ ID 32A UIS, Rg 100 Tested Pb‐Free Lead Plating & Halogen Free

Power MOSFETs-N Channel

PowerMOS transistor

GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic envelope suitable for surface mounting. The device is intended for use in Switched Mode Power Supplies (SMPS), motor control, welding, DC/DC and AC/DC converters, and in general purpose switching application

PowerMOS transistor

GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic envelope. The device is intended for use in Switched Mode Power Supplies (SMPS), motor control, welding, DC/DC and AC/DC converters, and in general purpose switching applications.

丝印代码：F12N10L；12A, 100V, 0.200 Ohm, Logic Level, N-Channel Power MOSFET

These are N-Channel enhancement mode silicon gate power field effect transistors specifically designed for use with logic level (5V) driving sources in applications such as programmable controllers, automotive switching and solenoid drivers. This performance is accomplished through a special gate

N - CHANNEL 100V - 0.12 ohm - 12A TO-252 LOW THRESHOLD POWER MOS TRANSISTOR

N - CHANNEL 100V - 0.12 Ω - 12A TO-252 LOW THRESHOLD POWER MOS TRANSISTOR ■ TYPICAL RDS(on) = 0.12 Ω ■ AVALANCHE RUGGED TECHNOLOGY ■ 100 AVALANCHE TESTED ■ HIGH CURRENT CAPABILITY ■ 175 °C OPERATING TEMPERATURE ■ LOW THRESHOLD DRIVE ■ FOR THROUGH-HOLE VERSION CONTACT SALES OFFICE APPLI

TMOS POWER FET 12 AMPERES 100 VOLTS RDS(on) = 0.16 OHM

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