EMB1412 MOSFET Gate Driver

1 Features 1• Compound CMOS and Bipolar Outputs Reduce Output Current Variation • 7 A Sink/3 A Source Current • Fast Propagation Times (25 ns Typical) • Fast Rise and Fall Times (14 ns/12 ns Rise/Fall with 2 nF Load) • Inverting and Non-Inverting Inputs Provide Either Configuration with a

MOSFET 栅极驱动器

The EMB1412 MOSFET gate driver provides high peak gate drive current in 8-lead exposed-pad VSSOP package, with improved power dissipation required for high frequency operation. The compound output driver stage includes MOS and bipolar transistors operating in parallel that together sink more than 7- • Compound CMOS and Bipolar Outputs Reduce Output Current Variation\n• 7 A Sink/3 A Source Current\n• Fast Propagation Times (25 ns Typical)\n• Fast Rise and Fall Times (14 ns/12 ns Rise Fall with 2 nF Load)\n• Inverting and Non-Inverting Inputs Provide Either Configuration with a Single Device\n• S;

MOSFET Gate Driver

文件：767.08 Kbytes Page：15 Pages

丝印代码：SA3B；EMB1412 MOSFET Gate Driver

1 Features 1• Compound CMOS and Bipolar Outputs Reduce Output Current Variation • 7 A Sink/3 A Source Current • Fast Propagation Times (25 ns Typical) • Fast Rise and Fall Times (14 ns/12 ns Rise/Fall with 2 nF Load) • Inverting and Non-Inverting Inputs Provide Either Configuration with a

丝印代码：SA3B；EMB1412 MOSFET Gate Driver

1 Features 1• Compound CMOS and Bipolar Outputs Reduce Output Current Variation • 7 A Sink/3 A Source Current • Fast Propagation Times (25 ns Typical) • Fast Rise and Fall Times (14 ns/12 ns Rise/Fall with 2 nF Load) • Inverting and Non-Inverting Inputs Provide Either Configuration with a

丝印代码：SA3B；EMB1412 MOSFET Gate Driver

1 Features 1• Compound CMOS and Bipolar Outputs Reduce Output Current Variation • 7 A Sink/3 A Source Current • Fast Propagation Times (25 ns Typical) • Fast Rise and Fall Times (14 ns/12 ns Rise/Fall with 2 nF Load) • Inverting and Non-Inverting Inputs Provide Either Configuration with a

丝印代码：SA3B；EMB1412 MOSFET Gate Driver

1 Features 1• Compound CMOS and Bipolar Outputs Reduce Output Current Variation • 7 A Sink/3 A Source Current • Fast Propagation Times (25 ns Typical) • Fast Rise and Fall Times (14 ns/12 ns Rise/Fall with 2 nF Load) • Inverting and Non-Inverting Inputs Provide Either Configuration with a

丝印代码：SA3B；EMB1412 MOSFET Gate Driver

1 Features 1• Compound CMOS and Bipolar Outputs Reduce Output Current Variation • 7 A Sink/3 A Source Current • Fast Propagation Times (25 ns Typical) • Fast Rise and Fall Times (14 ns/12 ns Rise/Fall with 2 nF Load) • Inverting and Non-Inverting Inputs Provide Either Configuration with a

丝印代码：SA3B；EMB1412 MOSFET Gate Driver

1 Features 1• Compound CMOS and Bipolar Outputs Reduce Output Current Variation • 7 A Sink/3 A Source Current • Fast Propagation Times (25 ns Typical) • Fast Rise and Fall Times (14 ns/12 ns Rise/Fall with 2 nF Load) • Inverting and Non-Inverting Inputs Provide Either Configuration with a

丝印代码：SA3B；EMB1412 MOSFET Gate Driver

1 Features 1• Compound CMOS and Bipolar Outputs Reduce Output Current Variation • 7 A Sink/3 A Source Current • Fast Propagation Times (25 ns Typical) • Fast Rise and Fall Times (14 ns/12 ns Rise/Fall with 2 nF Load) • Inverting and Non-Inverting Inputs Provide Either Configuration with a

丝印代码：SA3B；EMB1412 MOSFET Gate Driver

1 Features 1• Compound CMOS and Bipolar Outputs Reduce Output Current Variation • 7 A Sink/3 A Source Current • Fast Propagation Times (25 ns Typical) • Fast Rise and Fall Times (14 ns/12 ns Rise/Fall with 2 nF Load) • Inverting and Non-Inverting Inputs Provide Either Configuration with a

丝印代码：SA3B；EMB1412 MOSFET Gate Driver

1 Features 1• Compound CMOS and Bipolar Outputs Reduce Output Current Variation • 7 A Sink/3 A Source Current • Fast Propagation Times (25 ns Typical) • Fast Rise and Fall Times (14 ns/12 ns Rise/Fall with 2 nF Load) • Inverting and Non-Inverting Inputs Provide Either Configuration with a

丝印代码：SA3B；EMB1412 MOSFET Gate Driver

1 Features 1• Compound CMOS and Bipolar Outputs Reduce Output Current Variation • 7 A Sink/3 A Source Current • Fast Propagation Times (25 ns Typical) • Fast Rise and Fall Times (14 ns/12 ns Rise/Fall with 2 nF Load) • Inverting and Non-Inverting Inputs Provide Either Configuration with a

丝印代码：SA3B；EMB1412 MOSFET Gate Driver

1 Features 1• Compound CMOS and Bipolar Outputs Reduce Output Current Variation • 7 A Sink/3 A Source Current • Fast Propagation Times (25 ns Typical) • Fast Rise and Fall Times (14 ns/12 ns Rise/Fall with 2 nF Load) • Inverting and Non-Inverting Inputs Provide Either Configuration with a

丝印代码：SA3B；EMB1412 MOSFET Gate Driver

1 Features 1• Compound CMOS and Bipolar Outputs Reduce Output Current Variation • 7 A Sink/3 A Source Current • Fast Propagation Times (25 ns Typical) • Fast Rise and Fall Times (14 ns/12 ns Rise/Fall with 2 nF Load) • Inverting and Non-Inverting Inputs Provide Either Configuration with a

MOSFET Gate Driver

文件：767.08 Kbytes Page：15 Pages

MOSFET Gate Driver

文件：767.08 Kbytes Page：15 Pages

封装/外壳：8-PowerTSSOP，8-MSOP（0.118"，3.00mm 宽） 包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 描述：IC GATE DRVR LOW-SIDE 8MSOP 集成电路（IC） 栅极驱动器

封装/外壳：8-PowerTSSOP，8-MSOP（0.118"，3.00mm 宽） 包装：管件 描述：IC GATE DRVR LOW-SIDE 8MSOP 集成电路（IC） 栅极驱动器

MOSFET Gate Driver

文件：767.08 Kbytes Page：15 Pages

MOSFET Gate Driver

文件：767.08 Kbytes Page：15 Pages

MOSFET Gate Driver

文件：767.08 Kbytes Page：15 Pages

FOR OPTICAL INFORMATION SYSTEMS

DESCRIPTION ML1XX2 is a high power AlGaInP semiconductor laser which provides a stable, single transverse mode oscillation with emission wavelength of 685-nm and standard CW light output of 30mW. ML1XX2 has a window-mirror-facet which improves the maximum output power. That leads to highly relia

2A HIGH-SPEED MOSFET DRIVERS

文件：66.67 Kbytes Page：5 Pages

2A HIGH-SPEED MOSFET DRIVERS

文件：66.67 Kbytes Page：5 Pages

2A HIGH-SPEED MOSFET DRIVERS

文件：66.67 Kbytes Page：5 Pages

2A HIGH-SPEED MOSFET DRIVERS

文件：66.67 Kbytes Page：5 Pages