26 - 32 GHz Low Noise MMIC

FEATURES • 26 -32 GHz BANDWIDTH • +20.0 dBm TYPICAL OUTPUT POWER • 21 dB ± 1.5 dB TYPICAL POWER GAIN • FOUR SECTION, DISTRIBUTED AMPLIFIER • DUAL BIAS SUPPLY • 0.3 MICRON RECESSED “MUSHROOM” GATE • Si3N4 PASSIVATION • ADVANCED EPITAXIAL HETEROJUNCTION PROFILE PROVIDES EXTRA HIGH PO

26-32 GHz low noise MMIC

7 AMPERES NPN SILICON POWER TRANSISTORS 60 WATTS 150 and 200 VOLTS

These devices are high voltage, high speed transistors for horizontal deflection output stages of TV’s and CRT’s. • High Voltage: VCEV = 330 or 400 V • Fast Switching Speed: tf = 750 ns (max) • Low Saturation Voltage: VCE(sat) = 1 V (max) @ 5 A • Packaged in Compact JEDEC TO–220AB

POWER TRANSISTORS(7A,150-200V,60W)

7 AMPERE POWER TRANSISTOR 150 - 200 VOLTS 60 WATTS

IN-LINE MINIATURE SINGLE PHASE SILICON BRIDGE(VOLTAGE - 50 to 800 Volts CURRENT - 4.0 Amperes)

FEATURES • Plastic material has Underwriters Laboratory Flammability Classification 94V-O • Ideal for printed circuit board • Reliable low cost construction utilizing molded plastic technique • Surge overload rating: 200 Amperes peak • Pb free product are available : 99 Sn above can meet Rohs

Wideband, Low Power Monolithic Op Amp

文件：432.11 Kbytes Page：6 Pages

Wideband, Low Power Monolithic Op Amp

文件：432.11 Kbytes Page：6 Pages