型号 功能描述 生产厂家 企业 LOGO 操作
EM636165TS

1M x 16 bit Synchronous DRAM (SDRAM)

Overview The EM636165 SDRAM is a high-speed CMOS synchronous DRAM containing 16 Mbits. It is internally configured as a dual 512K word x 16 DRAM with a synchronous interface (all signals are registered on the positive edge of the clock signal, CLK). Each of the 512K x 16 bit banks is organized

Etron

钰创科技

EM636165TS

Specialty DRAM-SDRAM

Etron

钰创科技

1Mega x 16 Synchronous DRAM (SDRAM)

Overview The EM636165 SDRAM is a high-speed CMOS synchronous DRAM containing 16 Mbits. It is internally configured as a dual 512K word x 16 DRAM with a synchronous interface (all signals are registered on the positive edge of the clock signal, CLK). Each of the 512K x 16 bit banks is organized

Etron

钰创科技

1Mega x 16 Synchronous DRAM (SDRAM)

文件:791.08 Kbytes Page:75 Pages

Etron

钰创科技

1Mega x 16 Synchronous DRAM (SDRAM)

Overview The EM636165 SDRAM is a high-speed CMOS synchronous DRAM containing 16 Mbits. It is internally configured as a dual 512K word x 16 DRAM with a synchronous interface (all signals are registered on the positive edge of the clock signal, CLK). Each of the 512K x 16 bit banks is organized

Etron

钰创科技

1Mega x 16 Synchronous DRAM (SDRAM)

Overview The EM636165 SDRAM is a high-speed CMOS synchronous DRAM containing 16 Mbits. It is internally configured as a dual 512K word x 16 DRAM with a synchronous interface (all signals are registered on the positive edge of the clock signal, CLK). Each of the 512K x 16 bit banks is organized

Etron

钰创科技

1Mega x 16 Synchronous DRAM (SDRAM)

Overview The EM636165 SDRAM is a high-speed CMOS synchronous DRAM containing 16 Mbits. It is internally configured as a dual 512K word x 16 DRAM with a synchronous interface (all signals are registered on the positive edge of the clock signal, CLK). Each of the 512K x 16 bit banks is organized

Etron

钰创科技

1Mega x 16 Synchronous DRAM (SDRAM)

Overview The EM636165 SDRAM is a high-speed CMOS synchronous DRAM containing 16 Mbits. It is internally configured as a dual 512K word x 16 DRAM with a synchronous interface (all signals are registered on the positive edge of the clock signal, CLK). Each of the 512K x 16 bit banks is organized

Etron

钰创科技

1Mega x 16 Synchronous DRAM (SDRAM)

Overview The EM636165 SDRAM is a high-speed CMOS synchronous DRAM containing 16 Mbits. It is internally configured as a dual 512K word x 16 DRAM with a synchronous interface (all signals are registered on the positive edge of the clock signal, CLK). Each of the 512K x 16 bit banks is organized

Etron

钰创科技

1Mega x 16 Synchronous DRAM (SDRAM)

Overview The EM636165 SDRAM is a high-speed CMOS synchronous DRAM containing 16 Mbits. It is internally configured as a dual 512K word x 16 DRAM with a synchronous interface (all signals are registered on the positive edge of the clock signal, CLK). Each of the 512K x 16 bit banks is organized

Etron

钰创科技

1Mega x 16 Synchronous DRAM (SDRAM)

Overview The EM636165 SDRAM is a high-speed CMOS synchronous DRAM containing 16 Mbits. It is internally configured as a dual 512K word x 16 DRAM with a synchronous interface (all signals are registered on the positive edge of the clock signal, CLK). Each of the 512K x 16 bit banks is organized

Etron

钰创科技

1Mega x 16 Synchronous DRAM (SDRAM)

Overview The EM636165 SDRAM is a high-speed CMOS synchronous DRAM containing 16 Mbits. It is internally configured as a dual 512K word x 16 DRAM with a synchronous interface (all signals are registered on the positive edge of the clock signal, CLK). Each of the 512K x 16 bit banks is organized

Etron

钰创科技

1Mega x 16 Synchronous DRAM (SDRAM)

Overview The EM636165 SDRAM is a high-speed CMOS synchronous DRAM containing 16 Mbits. It is internally configured as a dual 512K word x 16 DRAM with a synchronous interface (all signals are registered on the positive edge of the clock signal, CLK). Each of the 512K x 16 bit banks is organized

Etron

钰创科技

1Mega x 16 Synchronous DRAM (SDRAM)

Overview The EM636165 SDRAM is a high-speed CMOS synchronous DRAM containing 16 Mbits. It is internally configured as a dual 512K word x 16 DRAM with a synchronous interface (all signals are registered on the positive edge of the clock signal, CLK). Each of the 512K x 16 bit banks is organized

Etron

钰创科技

1Mega x 16 Synchronous DRAM (SDRAM)

Overview The EM636165 SDRAM is a high-speed CMOS synchronous DRAM containing 16 Mbits. It is internally configured as a dual 512K word x 16 DRAM with a synchronous interface (all signals are registered on the positive edge of the clock signal, CLK). Each of the 512K x 16 bit banks is organized

Etron

钰创科技

1Mega x 16 Synchronous DRAM (SDRAM)

Overview The EM636165 SDRAM is a high-speed CMOS synchronous DRAM containing 16 Mbits. It is internally configured as a dual 512K word x 16 DRAM with a synchronous interface (all signals are registered on the positive edge of the clock signal, CLK). Each of the 512K x 16 bit banks is organized

Etron

钰创科技

1Mega x 16 Synchronous DRAM (SDRAM)

Overview The EM636165 SDRAM is a high-speed CMOS synchronous DRAM containing 16 Mbits. It is internally configured as a dual 512K word x 16 DRAM with a synchronous interface (all signals are registered on the positive edge of the clock signal, CLK). Each of the 512K x 16 bit banks is organized

Etron

钰创科技

1Mega x 16 Synchronous DRAM (SDRAM)

Overview The EM636165 SDRAM is a high-speed CMOS synchronous DRAM containing 16 Mbits. It is internally configured as a dual 512K word x 16 DRAM with a synchronous interface (all signals are registered on the positive edge of the clock signal, CLK). Each of the 512K x 16 bit banks is organized

Etron

钰创科技

1Mega x 16 Synchronous DRAM (SDRAM)

Overview The EM636165 SDRAM is a high-speed CMOS synchronous DRAM containing 16 Mbits. It is internally configured as a dual 512K word x 16 DRAM with a synchronous interface (all signals are registered on the positive edge of the clock signal, CLK). Each of the 512K x 16 bit banks is organized

Etron

钰创科技

1Mega x 16 Synchronous DRAM (SDRAM)

Overview The EM636165 SDRAM is a high-speed CMOS synchronous DRAM containing 16 Mbits. It is internally configured as a dual 512K word x 16 DRAM with a synchronous interface (all signals are registered on the positive edge of the clock signal, CLK). Each of the 512K x 16 bit banks is organized

Etron

钰创科技

1Mega x 16 Synchronous DRAM (SDRAM)

文件:791.08 Kbytes Page:75 Pages

Etron

钰创科技

1Mega x 16 Synchronous DRAM (SDRAM)

文件:791.08 Kbytes Page:75 Pages

Etron

钰创科技

1Mega x 16 Synchronous DRAM (SDRAM)

文件:791.08 Kbytes Page:75 Pages

Etron

钰创科技

1Mega x 16 Synchronous DRAM (SDRAM)

文件:791.08 Kbytes Page:75 Pages

Etron

钰创科技

1Mega x 16 Synchronous DRAM (SDRAM)

文件:791.08 Kbytes Page:75 Pages

Etron

钰创科技

1Mega x 16 Synchronous DRAM (SDRAM)

文件:791.08 Kbytes Page:75 Pages

Etron

钰创科技

1Mega x 16 Synchronous DRAM (SDRAM)

文件:791.08 Kbytes Page:75 Pages

Etron

钰创科技

1Mega x 16 Synchronous DRAM (SDRAM)

文件:791.08 Kbytes Page:75 Pages

Etron

钰创科技

1Mega x 16 Synchronous DRAM (SDRAM)

文件:791.08 Kbytes Page:75 Pages

Etron

钰创科技

1Mega x 16 Synchronous DRAM (SDRAM)

文件:791.08 Kbytes Page:75 Pages

Etron

钰创科技

1Mega x 16 Synchronous DRAM (SDRAM)

文件:791.08 Kbytes Page:75 Pages

Etron

钰创科技

1Mega x 16 Synchronous DRAM (SDRAM)

文件:791.08 Kbytes Page:75 Pages

Etron

钰创科技

1Mega x 16 Synchronous DRAM (SDRAM)

文件:791.08 Kbytes Page:75 Pages

Etron

钰创科技

1Mega x 16 Synchronous DRAM (SDRAM)

文件:791.08 Kbytes Page:75 Pages

Etron

钰创科技

1Mega x 16 Synchronous DRAM (SDRAM)

Etron

钰创科技

1Mega x 16 Synchronous DRAM (SDRAM)

Etron

钰创科技

1Mega x 16 Synchronous DRAM (SDRAM)

文件:791.08 Kbytes Page:75 Pages

Etron

钰创科技

1Mega x 16 Synchronous DRAM (SDRAM)

文件:791.08 Kbytes Page:75 Pages

Etron

钰创科技

1Mega x 16 Synchronous DRAM (SDRAM)

文件:791.08 Kbytes Page:75 Pages

Etron

钰创科技

1Mega x 16 Synchronous DRAM (SDRAM)

文件:791.08 Kbytes Page:75 Pages

Etron

钰创科技

1Mega x 16 Synchronous DRAM (SDRAM)

文件:791.08 Kbytes Page:75 Pages

Etron

钰创科技

1Mega x 16 Synchronous DRAM (SDRAM)

文件:791.08 Kbytes Page:75 Pages

Etron

钰创科技

1Mega x 16 Synchronous DRAM (SDRAM)

文件:791.08 Kbytes Page:75 Pages

Etron

钰创科技

1Mega x 16 Synchronous DRAM (SDRAM)

文件:791.08 Kbytes Page:75 Pages

Etron

钰创科技

1Mega x 16 Synchronous DRAM (SDRAM)

文件:791.08 Kbytes Page:75 Pages

Etron

钰创科技

1Mega x 16 Synchronous DRAM (SDRAM)

文件:791.08 Kbytes Page:75 Pages

Etron

钰创科技

1Mega x 16 Synchronous DRAM (SDRAM)

文件:791.08 Kbytes Page:75 Pages

Etron

钰创科技

1Mega x 16 Synchronous DRAM (SDRAM)

文件:791.08 Kbytes Page:75 Pages

Etron

钰创科技

1Mega x 16 Synchronous DRAM (SDRAM)

文件:791.08 Kbytes Page:75 Pages

Etron

钰创科技

1Mega x 16 Synchronous DRAM (SDRAM)

文件:791.08 Kbytes Page:75 Pages

Etron

钰创科技

1Mega x 16 Synchronous DRAM (SDRAM)

Overview The EM636165 SDRAM is a high-speed CMOS synchronous DRAM containing 16 Mbits. It is internally configured as a dual 512K word x 16 DRAM with a synchronous interface (all signals are registered on the positive edge of the clock signal, CLK). Each of the 512K x 16 bit banks is organized

Etron

钰创科技

EM636165TS产品属性

  • 类型

    描述

  • 型号

    EM636165TS

  • 制造商

    ETRON

  • 制造商全称

    ETRON

  • 功能描述

    1Mega x 16 Synchronous DRAM(SDRAM)

更新时间:2025-12-16 11:15:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
ETRON/钰创
2025+
TSSOP
5000
原装进口价格优 请找坤融电子!
ETRONTECH钰创原装正品
NEW
TSOP50
16670
全新原装正品,价格优势,长期供应,量大可订
钰创
25+
TSOP-50
32360
钰创全新特价EM636165TS-6G即刻询购立享优惠#长期有货
ETRONTEC
2023+
TSOP-50
53500
正品,原装现货
ETRONTEC
24+
TSOP-50
7250
绝对原装现货,价格低,欢迎询购!
ETRONTECH
2016+
TSSOP
4000
只做原装,假一罚十,公司可开17%增值税发票!
ETRON(钰创)
24+
N/A
8248
原厂可订货,技术支持,直接渠道。可签保供合同
ETRON
20+
TSSOP
2860
原厂原装正品价格优惠公司现货欢迎查询
ETRONTECH
24+
TSOP-50
85200
一级代理/放心购买
ETRONTECH
24+
TSSOP
6850
只做原装正品现货或订货假一赔十!

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