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型号	功能描述	生产厂家企业	LOGO
EM636165TS	1M x 16 bit Synchronous DRAM (SDRAM) Overview The EM636165 SDRAM is a high-speed CMOS synchronous DRAM containing 16 Mbits. It is internally configured as a dual 512K word x 16 DRAM with a synchronous interface (all signals are registered on the positive edge of the clock signal, CLK). Each of the 512K x 16 bit banks is organized	ETRON 钰创科技	ETRON
EM636165TS	Specialty DRAM-SDRAM	ETRON 钰创科技	ETRON
EM636165TS-10	1Mega x 16 Synchronous DRAM (SDRAM) Overview The EM636165 SDRAM is a high-speed CMOS synchronous DRAM containing 16 Mbits. It is internally configured as a dual 512K word x 16 DRAM with a synchronous interface (all signals are registered on the positive edge of the clock signal, CLK). Each of the 512K x 16 bit banks is organized	ETRON 钰创科技	ETRON
EM636165TS-10I	1Mega x 16 Synchronous DRAM (SDRAM) Overview The EM636165 SDRAM is a high-speed CMOS synchronous DRAM containing 16 Mbits. It is internally configured as a dual 512K word x 16 DRAM with a synchronous interface (all signals are registered on the positive edge of the clock signal, CLK). Each of the 512K x 16 bit banks is organized	ETRON 钰创科技	ETRON
EM636165TS-10I/10IG	1Mega x 16 Synchronous DRAM (SDRAM) Overview The EM636165 SDRAM is a high-speed CMOS synchronous DRAM containing 16 Mbits. It is internally configured as a dual 512K word x 16 DRAM with a synchronous interface (all signals are registered on the positive edge of the clock signal, CLK). Each of the 512K x 16 bit banks is organized	ETRON 钰创科技	ETRON
EM636165TS-10ISLASH10IG	1Mega x 16 Synchronous DRAM (SDRAM) Overview The EM636165 SDRAM is a high-speed CMOS synchronous DRAM containing 16 Mbits. It is internally configured as a dual 512K word x 16 DRAM with a synchronous interface (all signals are registered on the positive edge of the clock signal, CLK). Each of the 512K x 16 bit banks is organized	ETRON 钰创科技	ETRON
EM636165TS-5	1Mega x 16 Synchronous DRAM (SDRAM) Overview The EM636165 SDRAM is a high-speed CMOS synchronous DRAM containing 16 Mbits. It is internally configured as a dual 512K word x 16 DRAM with a synchronous interface (all signals are registered on the positive edge of the clock signal, CLK). Each of the 512K x 16 bit banks is organized	ETRON 钰创科技	ETRON
EM636165TS-55	1Mega x 16 Synchronous DRAM (SDRAM) Overview The EM636165 SDRAM is a high-speed CMOS synchronous DRAM containing 16 Mbits. It is internally configured as a dual 512K word x 16 DRAM with a synchronous interface (all signals are registered on the positive edge of the clock signal, CLK). Each of the 512K x 16 bit banks is organized	ETRON 钰创科技	ETRON
EM636165TS-6	1Mega x 16 Synchronous DRAM (SDRAM) Overview The EM636165 SDRAM is a high-speed CMOS synchronous DRAM containing 16 Mbits. It is internally configured as a dual 512K word x 16 DRAM with a synchronous interface (all signals are registered on the positive edge of the clock signal, CLK). Each of the 512K x 16 bit banks is organized	ETRON 钰创科技	ETRON
EM636165TS-6I/6IG	1Mega x 16 Synchronous DRAM (SDRAM) Overview The EM636165 SDRAM is a high-speed CMOS synchronous DRAM containing 16 Mbits. It is internally configured as a dual 512K word x 16 DRAM with a synchronous interface (all signals are registered on the positive edge of the clock signal, CLK). Each of the 512K x 16 bit banks is organized	ETRON 钰创科技	ETRON
EM636165TS-6ISLASH6IG	1Mega x 16 Synchronous DRAM (SDRAM) Overview The EM636165 SDRAM is a high-speed CMOS synchronous DRAM containing 16 Mbits. It is internally configured as a dual 512K word x 16 DRAM with a synchronous interface (all signals are registered on the positive edge of the clock signal, CLK). Each of the 512K x 16 bit banks is organized	ETRON 钰创科技	ETRON
EM636165TS-7	1Mega x 16 Synchronous DRAM (SDRAM) Overview The EM636165 SDRAM is a high-speed CMOS synchronous DRAM containing 16 Mbits. It is internally configured as a dual 512K word x 16 DRAM with a synchronous interface (all signals are registered on the positive edge of the clock signal, CLK). Each of the 512K x 16 bit banks is organized	ETRON 钰创科技	ETRON
EM636165TS-7I/7IG	1Mega x 16 Synchronous DRAM (SDRAM) Overview The EM636165 SDRAM is a high-speed CMOS synchronous DRAM containing 16 Mbits. It is internally configured as a dual 512K word x 16 DRAM with a synchronous interface (all signals are registered on the positive edge of the clock signal, CLK). Each of the 512K x 16 bit banks is organized	ETRON 钰创科技	ETRON
EM636165TS-7ISLASH7IG	1Mega x 16 Synchronous DRAM (SDRAM) Overview The EM636165 SDRAM is a high-speed CMOS synchronous DRAM containing 16 Mbits. It is internally configured as a dual 512K word x 16 DRAM with a synchronous interface (all signals are registered on the positive edge of the clock signal, CLK). Each of the 512K x 16 bit banks is organized	ETRON 钰创科技	ETRON
EM636165TS-7L	1Mega x 16 Synchronous DRAM (SDRAM) Overview The EM636165 SDRAM is a high-speed CMOS synchronous DRAM containing 16 Mbits. It is internally configured as a dual 512K word x 16 DRAM with a synchronous interface (all signals are registered on the positive edge of the clock signal, CLK). Each of the 512K x 16 bit banks is organized	ETRON 钰创科技	ETRON
EM636165TS-8	1Mega x 16 Synchronous DRAM (SDRAM) Overview The EM636165 SDRAM is a high-speed CMOS synchronous DRAM containing 16 Mbits. It is internally configured as a dual 512K word x 16 DRAM with a synchronous interface (all signals are registered on the positive edge of the clock signal, CLK). Each of the 512K x 16 bit banks is organized	ETRON 钰创科技	ETRON
EM636165TS-8I/8IG	1Mega x 16 Synchronous DRAM (SDRAM) Overview The EM636165 SDRAM is a high-speed CMOS synchronous DRAM containing 16 Mbits. It is internally configured as a dual 512K word x 16 DRAM with a synchronous interface (all signals are registered on the positive edge of the clock signal, CLK). Each of the 512K x 16 bit banks is organized	ETRON 钰创科技	ETRON
EM636165TS-8ISLASH8IG	1Mega x 16 Synchronous DRAM (SDRAM) Overview The EM636165 SDRAM is a high-speed CMOS synchronous DRAM containing 16 Mbits. It is internally configured as a dual 512K word x 16 DRAM with a synchronous interface (all signals are registered on the positive edge of the clock signal, CLK). Each of the 512K x 16 bit banks is organized	ETRON 钰创科技	ETRON
EM636165TS/BE-10G	1Mega x 16 Synchronous DRAM (SDRAM) 文件：791.08 Kbytes Page：75 Pages	ETRON 钰创科技	ETRON
EM636165TS/BE-55G	1Mega x 16 Synchronous DRAM (SDRAM) 文件：791.08 Kbytes Page：75 Pages	ETRON 钰创科技	ETRON
EM636165TS/BE-5G	1Mega x 16 Synchronous DRAM (SDRAM) 文件：791.08 Kbytes Page：75 Pages	ETRON 钰创科技	ETRON
EM636165TS/BE-6G	1Mega x 16 Synchronous DRAM (SDRAM) 文件：791.08 Kbytes Page：75 Pages	ETRON 钰创科技	ETRON
EM636165TS/BE-7G	1Mega x 16 Synchronous DRAM (SDRAM) 文件：791.08 Kbytes Page：75 Pages	ETRON 钰创科技	ETRON
EM636165TS/BE-7LG	1Mega x 16 Synchronous DRAM (SDRAM) 文件：791.08 Kbytes Page：75 Pages	ETRON 钰创科技	ETRON
EM636165TS/BE-8G	1Mega x 16 Synchronous DRAM (SDRAM) 文件：791.08 Kbytes Page：75 Pages	ETRON 钰创科技	ETRON
EM636165TS/VE-10	1Mega x 16 Synchronous DRAM (SDRAM) 文件：791.08 Kbytes Page：75 Pages	ETRON 钰创科技	ETRON
EM636165TS/VE-5	1Mega x 16 Synchronous DRAM (SDRAM) 文件：791.08 Kbytes Page：75 Pages	ETRON 钰创科技	ETRON
EM636165TS/VE-55	1Mega x 16 Synchronous DRAM (SDRAM) 文件：791.08 Kbytes Page：75 Pages	ETRON 钰创科技	ETRON
EM636165TS/VE-6	1Mega x 16 Synchronous DRAM (SDRAM) 文件：791.08 Kbytes Page：75 Pages	ETRON 钰创科技	ETRON
EM636165TS/VE-7	1Mega x 16 Synchronous DRAM (SDRAM) 文件：791.08 Kbytes Page：75 Pages	ETRON 钰创科技	ETRON
EM636165TS/VE-7L	1Mega x 16 Synchronous DRAM (SDRAM) 文件：791.08 Kbytes Page：75 Pages	ETRON 钰创科技	ETRON
EM636165TS/VE-8	1Mega x 16 Synchronous DRAM (SDRAM) 文件：791.08 Kbytes Page：75 Pages	ETRON 钰创科技	ETRON
EM636165TS-10	1Mega x 16 Synchronous DRAM (SDRAM)	ETRON 钰创科技	ETRON
EM636165TS-7	1Mega x 16 Synchronous DRAM (SDRAM)	ETRON 钰创科技	ETRON
EM636165TSSLASHBE-10G	1Mega x 16 Synchronous DRAM (SDRAM) 文件：791.08 Kbytes Page：75 Pages	ETRON 钰创科技	ETRON
EM636165TSSLASHBE-55G	1Mega x 16 Synchronous DRAM (SDRAM) 文件：791.08 Kbytes Page：75 Pages	ETRON 钰创科技	ETRON
EM636165TSSLASHBE-5G	1Mega x 16 Synchronous DRAM (SDRAM) 文件：791.08 Kbytes Page：75 Pages	ETRON 钰创科技	ETRON
EM636165TSSLASHBE-6G	1Mega x 16 Synchronous DRAM (SDRAM) 文件：791.08 Kbytes Page：75 Pages	ETRON 钰创科技	ETRON
EM636165TSSLASHBE-7G	1Mega x 16 Synchronous DRAM (SDRAM) 文件：791.08 Kbytes Page：75 Pages	ETRON 钰创科技	ETRON
EM636165TSSLASHBE-7LG	1Mega x 16 Synchronous DRAM (SDRAM) 文件：791.08 Kbytes Page：75 Pages	ETRON 钰创科技	ETRON
EM636165TSSLASHBE-8G	1Mega x 16 Synchronous DRAM (SDRAM) 文件：791.08 Kbytes Page：75 Pages	ETRON 钰创科技	ETRON
EM636165TSSLASHVE-10	1Mega x 16 Synchronous DRAM (SDRAM) 文件：791.08 Kbytes Page：75 Pages	ETRON 钰创科技	ETRON
EM636165TSSLASHVE-5	1Mega x 16 Synchronous DRAM (SDRAM) 文件：791.08 Kbytes Page：75 Pages	ETRON 钰创科技	ETRON
EM636165TSSLASHVE-55	1Mega x 16 Synchronous DRAM (SDRAM) 文件：791.08 Kbytes Page：75 Pages	ETRON 钰创科技	ETRON
EM636165TSSLASHVE-6	1Mega x 16 Synchronous DRAM (SDRAM) 文件：791.08 Kbytes Page：75 Pages	ETRON 钰创科技	ETRON
EM636165TSSLASHVE-7	1Mega x 16 Synchronous DRAM (SDRAM) 文件：791.08 Kbytes Page：75 Pages	ETRON 钰创科技	ETRON
EM636165TSSLASHVE-7L	1Mega x 16 Synchronous DRAM (SDRAM) 文件：791.08 Kbytes Page：75 Pages	ETRON 钰创科技	ETRON
EM636165TSSLASHVE-8	1Mega x 16 Synchronous DRAM (SDRAM) 文件：791.08 Kbytes Page：75 Pages	ETRON 钰创科技	ETRON
EM636165	1Mega x 16 Synchronous DRAM (SDRAM) Overview The EM636165 SDRAM is a high-speed CMOS synchronous DRAM containing 16 Mbits. It is internally configured as a dual 512K word x 16 DRAM with a synchronous interface (all signals are registered on the positive edge of the clock signal, CLK). Each of the 512K x 16 bit banks is organized	ETRON 钰创科技	ETRON
EM636165-XXI	1Mega x 16 Synchronous DRAM (SDRAM) Overview The EM636165 SDRAM is a high-speed CMOS synchronous DRAM containing 16 Mbits. It is internally configured as a dual 512K word x 16 DRAM with a synchronous interface (all signals are registered on the positive edge of the clock signal, CLK). Each of the 512K x 16 bit banks is organized	ETRON 钰创科技	ETRON
EM636165	1Mega x 16 Synchronous DRAM (SDRAM) 文件：791.08 Kbytes Page：75 Pages	ETRON 钰创科技	ETRON

EM636165TS产品属性

类型
描述
型号
EM636165TS
制造商
ETRON
制造商全称
ETRON
功能描述
1Mega x 16 Synchronous DRAM(SDRAM)

EM636165TS供应商更多...

更新时间：2026-3-12 17:10:00

IC供应商	芯片型号	品牌	批号	封装	库存	备注	价格
深圳市明嘉莱科技有限公司	EM636165TS-6G	ETRONTECH	24+	TSOP50	162145	明嘉莱只做原装正品现货	询价
深圳市宏捷佳电子科技有限公司	EM636165TS-6G	ETRONTEC	2023+	TSOP-50	53500	正品,原装现货	询价
深圳市科芯源微电子有限公司	EM636165TS-6G	ETRONTEC	23+	TSSOP	100586	全新原厂原装正品现货,可提供技术支持、样品免费!	询价
深圳市恒凯威科技开发有限公司	EM636165TS-6G	ETRONTECH	21+	TSOP	8080	只做原装,质量保证	询价
深圳市昌和盛利电子有限公司	EM636165TS-6G	ETRONTECH钰创原装正品	26+	TSOP50	16670	全新原装正品,价格优势,长期供应,量大可订	询价
深圳市羿芯诚电子有限公司	EM636165TS-7G	ETRON	20+	TSSOP	2860	原厂原装正品价格优惠公司现货欢迎查询	询价
深圳市欧立现代科技有限公司	EM636165TS-6G	ETRONTEC	24+	TSOP-50	7250	绝对原装现货,价格低,欢迎询购!	询价
瀚佳科技(深圳)有限公司	EM636165TS-6G	ETRONTECH	24+	TSOP-50	85200	一级代理/放心购买	询价
中天科工半导体（深圳）有限公司	EM636165TS-6G	钰创	25+	TSOP-50	32360	钰创全新特价EM636165TS-6G即刻询购立享优惠#长期有货	询价
深圳市赛特兴科技有限公司	EM636165TS-6G	ETRON	23+	TSOP8	21060	正规渠道,只有原装!	询价

EM636165TS芯片相关品牌

EM636165TS规格书下载地址

EM636165TS参数引脚图相关

EM636165TS数据表相关新闻

EM2130L02QI 全新原装正品现货
EM2130L02QI 全新原装正品现货
2022-8-18
EM7206PRY，EM7206PRY1，EM7206PRY2
EM7206PRY，EM7206PRY1，EM7206PRY2
2020-4-6
EM6325AXSP5B-1.4，EM6325CXSP5B-1.3，EM6325CXSP5B-1.3+，EM636165TS-10
EM6325AXSP5B-1.4，EM6325CXSP5B-1.3，EM6325CXSP5B-1.3+，EM636165TS-10
2020-1-14
EM6K6ROHM：SOT56356000PCS原装现货
EM6K6 品牌： ROHM 封装： SOT563 数量： 56000PCS 原装现货
2019-11-11
EM6325CXSP5B-2.6可立即发货
可立即发货
2019-9-24
EM636165TS-6G公司原装正品现货/长期供应
瀚佳科技（深圳）有限公司专业进口电子元器件代理商
2019-7-3

DdatasheetPDF页码索引

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找IC，尽在114IC

EM636165TS产品属性

EM636165TS供应商更多...

EM636165TS芯片相关品牌

EM636165TS规格书下载地址

EM636165TS参数引脚图相关

EM636165TS数据表相关新闻

EM2130L02QI 全新原装正品 现货

EM7206PRY，EM7206PRY1，EM7206PRY2

EM6325AXSP5B-1.4，EM6325CXSP5B-1.3，EM6325CXSP5B-1.3+，EM636165TS-10

EM6K6ROHM：SOT56356000PCS原装现货

EM6325CXSP5B-2.6可立即发货

EM636165TS-6G公司原装正品现货/长期供应

DdatasheetPDF页码索引

EM2130L02QI 全新原装正品现货