| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
EM636165 | 1Mega x 16 Synchronous DRAM (SDRAM) Overview The EM636165 SDRAM is a high-speed CMOS synchronous DRAM containing 16 Mbits. It is internally configured as a dual 512K word x 16 DRAM with a synchronous interface (all signals are registered on the positive edge of the clock signal, CLK). Each of the 512K x 16 bit banks is organized | ETRON 钰创科技 |   | |
EM636165 | 1Mega x 16 Synchronous DRAM (SDRAM) | ETRON 钰创科技 | | |
EM636165 | 1Mega x 16 Synchronous DRAM (SDRAM) 文件：791.08 Kbytes Page：75 Pages | ETRON 钰创科技 | | |
1M x 16 bit Synchronous DRAM (SDRAM) Overview The EM636165 SDRAM is a high-speed CMOS synchronous DRAM containing 16 Mbits. It is internally configured as a dual 512K word x 16 DRAM with a synchronous interface (all signals are registered on the positive edge of the clock signal, CLK). Each of the 512K x 16 bit banks is organized | ETRON 钰创科技 | | ||
1Mega x 16 Synchronous DRAM (SDRAM) Overview\nThe EM636165 SDRAM is a high-speed CMOS synchronous DRAM containing 16 Mbits. It is internally configured as a dual 512K word x 16 DRAM with a synchronous interface (all signals are registered on the positive edge of the clock signal, CLK). Each of the 512K x 16 bit banks is organized as 2 · Fast access time: 4.5/5/5/5.5/6.5/7.5 ns\n· Fast clock rate: 200/183/166/143/125/100 MHz\n· Self refresh mode: standard and low power\n· Internal pipelined architecture\n· 512K word x 16-bit x 2-bank\n· Programmable Mode registers\n - CAS# Latency: 1, 2, or 3\n - Burst Length: 1, 2, 4, 8, or f; | ETRON 钰创科技 | | ||
1Mega x 16 Synchronous DRAM (SDRAM) Overview The EM636165 SDRAM is a high-speed CMOS synchronous DRAM containing 16 Mbits. It is internally configured as a dual 512K word x 16 DRAM with a synchronous interface (all signals are registered on the positive edge of the clock signal, CLK). Each of the 512K x 16 bit banks is organized | ETRON 钰创科技 | | ||
1Mega x 16 Synchronous DRAM (SDRAM) Overview The EM636165 SDRAM is a high-speed CMOS synchronous DRAM containing 16 Mbits. It is internally configured as a dual 512K word x 16 DRAM with a synchronous interface (all signals are registered on the positive edge of the clock signal, CLK). Each of the 512K x 16 bit banks is organized | ETRON 钰创科技 | | ||
1Mega x 16 Synchronous DRAM (SDRAM) Overview The EM636165 SDRAM is a high-speed CMOS synchronous DRAM containing 16 Mbits. It is internally configured as a dual 512K word x 16 DRAM with a synchronous interface (all signals are registered on the positive edge of the clock signal, CLK). Each of the 512K x 16 bit banks is organized | ETRON 钰创科技 | | ||
1Mega x 16 Synchronous DRAM (SDRAM) Overview The EM636165 SDRAM is a high-speed CMOS synchronous DRAM containing 16 Mbits. It is internally configured as a dual 512K word x 16 DRAM with a synchronous interface (all signals are registered on the positive edge of the clock signal, CLK). Each of the 512K x 16 bit banks is organized | ETRON 钰创科技 | | ||
1Mega x 16 Synchronous DRAM (SDRAM) Overview The EM636165 SDRAM is a high-speed CMOS synchronous DRAM containing 16 Mbits. It is internally configured as a dual 512K word x 16 DRAM with a synchronous interface (all signals are registered on the positive edge of the clock signal, CLK). Each of the 512K x 16 bit banks is organized | ETRON 钰创科技 | | ||
1Mega x 16 Synchronous DRAM (SDRAM) Overview The EM636165 SDRAM is a high-speed CMOS synchronous DRAM containing 16 Mbits. It is internally configured as a dual 512K word x 16 DRAM with a synchronous interface (all signals are registered on the positive edge of the clock signal, CLK). Each of the 512K x 16 bit banks is organized | ETRON 钰创科技 | | ||
1Mega x 16 Synchronous DRAM (SDRAM) Overview The EM636165 SDRAM is a high-speed CMOS synchronous DRAM containing 16 Mbits. It is internally configured as a dual 512K word x 16 DRAM with a synchronous interface (all signals are registered on the positive edge of the clock signal, CLK). Each of the 512K x 16 bit banks is organized | ETRON 钰创科技 | | ||
1Mega x 16 Synchronous DRAM (SDRAM) Overview The EM636165 SDRAM is a high-speed CMOS synchronous DRAM containing 16 Mbits. It is internally configured as a dual 512K word x 16 DRAM with a synchronous interface (all signals are registered on the positive edge of the clock signal, CLK). Each of the 512K x 16 bit banks is organized | ETRON 钰创科技 | | ||
1Mega x 16 Synchronous DRAM (SDRAM) Overview The EM636165 SDRAM is a high-speed CMOS synchronous DRAM containing 16 Mbits. It is internally configured as a dual 512K word x 16 DRAM with a synchronous interface (all signals are registered on the positive edge of the clock signal, CLK). Each of the 512K x 16 bit banks is organized | ETRON 钰创科技 | | ||
1Mega x 16 Synchronous DRAM (SDRAM) Overview The EM636165 SDRAM is a high-speed CMOS synchronous DRAM containing 16 Mbits. It is internally configured as a dual 512K word x 16 DRAM with a synchronous interface (all signals are registered on the positive edge of the clock signal, CLK). Each of the 512K x 16 bit banks is organized | ETRON 钰创科技 | | ||
1Mega x 16 Synchronous DRAM (SDRAM) The EM636165 SDRAM is a high-speed CMOS synchronous DRAM containing 16 Mbits. It is internally configured as a dual 512K x 16 bit DRAM with a synchronous interface (all signals are registered on the positive edge of the clock signal, CLK). Each of the 512K x 16 bit bank is organized as 2048 rows by • Fast access time: 4.5/5/5/5.5/6.5/7.5 ns\r\n• Fast clock rate: 200/183/166/143/125/100 MHz\r\n• Self refresh mode: standard and low power\r\n• Fully synchronous operation\r\n• Internal pipelined architecture\r\n• 512K x 16 bit x 2-bank\r\n• Programmable Mode registers\r\n - CAS# Latency: 1, 2, or ; | ETRON 钰创科技 | | ||
1Mega x 16 Synchronous DRAM (SDRAM) Overview The EM636165 SDRAM is a high-speed CMOS synchronous DRAM containing 16 Mbits. It is internally configured as a dual 512K word x 16 DRAM with a synchronous interface (all signals are registered on the positive edge of the clock signal, CLK). Each of the 512K x 16 bit banks is organized | ETRON 钰创科技 | | ||
1Mega x 16 Synchronous DRAM (SDRAM) Overview The EM636165 SDRAM is a high-speed CMOS synchronous DRAM containing 16 Mbits. It is internally configured as a dual 512K word x 16 DRAM with a synchronous interface (all signals are registered on the positive edge of the clock signal, CLK). Each of the 512K x 16 bit banks is organized | ETRON 钰创科技 | | ||
1Mega x 16 Synchronous DRAM (SDRAM) Overview The EM636165 SDRAM is a high-speed CMOS synchronous DRAM containing 16 Mbits. It is internally configured as a dual 512K word x 16 DRAM with a synchronous interface (all signals are registered on the positive edge of the clock signal, CLK). Each of the 512K x 16 bit banks is organized | ETRON 钰创科技 | | ||
1Mega x 16 Synchronous DRAM (SDRAM) Overview The EM636165 SDRAM is a high-speed CMOS synchronous DRAM containing 16 Mbits. It is internally configured as a dual 512K word x 16 DRAM with a synchronous interface (all signals are registered on the positive edge of the clock signal, CLK). Each of the 512K x 16 bit banks is organized | ETRON 钰创科技 | | ||
1Mega x 16 Synchronous DRAM (SDRAM) Overview The EM636165 SDRAM is a high-speed CMOS synchronous DRAM containing 16 Mbits. It is internally configured as a dual 512K word x 16 DRAM with a synchronous interface (all signals are registered on the positive edge of the clock signal, CLK). Each of the 512K x 16 bit banks is organized | ETRON 钰创科技 | | ||
1Mega x 16 Synchronous DRAM (SDRAM) Overview The EM636165 SDRAM is a high-speed CMOS synchronous DRAM containing 16 Mbits. It is internally configured as a dual 512K word x 16 DRAM with a synchronous interface (all signals are registered on the positive edge of the clock signal, CLK). Each of the 512K x 16 bit banks is organized | ETRON 钰创科技 | | ||
1Mega x 16 Synchronous DRAM (SDRAM) Overview The EM636165 SDRAM is a high-speed CMOS synchronous DRAM containing 16 Mbits. It is internally configured as a dual 512K word x 16 DRAM with a synchronous interface (all signals are registered on the positive edge of the clock signal, CLK). Each of the 512K x 16 bit banks is organized | ETRON 钰创科技 | | ||
1Mega x 16 Synchronous DRAM (SDRAM) Overview The EM636165 SDRAM is a high-speed CMOS synchronous DRAM containing 16 Mbits. It is internally configured as a dual 512K word x 16 DRAM with a synchronous interface (all signals are registered on the positive edge of the clock signal, CLK). Each of the 512K x 16 bit banks is organized | ETRON 钰创科技 | | ||
1Mega x 16 Synchronous DRAM (SDRAM) Overview The EM636165 SDRAM is a high-speed CMOS synchronous DRAM containing 16 Mbits. It is internally configured as a dual 512K word x 16 DRAM with a synchronous interface (all signals are registered on the positive edge of the clock signal, CLK). Each of the 512K x 16 bit banks is organized | ETRON 钰创科技 | | ||
1Mega x 16 Synchronous DRAM (SDRAM) Overview The EM636165 SDRAM is a high-speed CMOS synchronous DRAM containing 16 Mbits. It is internally configured as a dual 512K word x 16 DRAM with a synchronous interface (all signals are registered on the positive edge of the clock signal, CLK). Each of the 512K x 16 bit banks is organized | ETRON 钰创科技 | | ||
1Mega x 16 Synchronous DRAM (SDRAM) Overview The EM636165 SDRAM is a high-speed CMOS synchronous DRAM containing 16 Mbits. It is internally configured as a dual 512K word x 16 DRAM with a synchronous interface (all signals are registered on the positive edge of the clock signal, CLK). Each of the 512K x 16 bit banks is organized | ETRON 钰创科技 | | ||
1Mega x 16 Synchronous DRAM (SDRAM) Overview The EM636165 SDRAM is a high-speed CMOS synchronous DRAM containing 16 Mbits. It is internally configured as a dual 512K word x 16 DRAM with a synchronous interface (all signals are registered on the positive edge of the clock signal, CLK). Each of the 512K x 16 bit banks is organized | ETRON 钰创科技 | | ||
1Mega x 16 Synchronous DRAM (SDRAM) Overview The EM636165 SDRAM is a high-speed CMOS synchronous DRAM containing 16 Mbits. It is internally configured as a dual 512K word x 16 DRAM with a synchronous interface (all signals are registered on the positive edge of the clock signal, CLK). Each of the 512K x 16 bit banks is organized | ETRON 钰创科技 | | ||
1Mega x 16 Synchronous DRAM (SDRAM) Overview The EM636165 SDRAM is a high-speed CMOS synchronous DRAM containing 16 Mbits. It is internally configured as a dual 512K word x 16 DRAM with a synchronous interface (all signals are registered on the positive edge of the clock signal, CLK). Each of the 512K x 16 bit banks is organized | ETRON 钰创科技 | | ||
1Mega x 16 Synchronous DRAM (SDRAM) Overview The EM636165 SDRAM is a high-speed CMOS synchronous DRAM containing 16 Mbits. It is internally configured as a dual 512K word x 16 DRAM with a synchronous interface (all signals are registered on the positive edge of the clock signal, CLK). Each of the 512K x 16 bit banks is organized | ETRON 钰创科技 | | ||
1Mega x 16 Synchronous DRAM (SDRAM) 文件：791.08 Kbytes Page：75 Pages | ETRON 钰创科技 | | ||
1Mega x 16 Synchronous DRAM (SDRAM) 文件：791.08 Kbytes Page：75 Pages | ETRON 钰创科技 | | ||
1Mega x 16 Synchronous DRAM (SDRAM) 文件：791.08 Kbytes Page：75 Pages | ETRON 钰创科技 | | ||
1Mega x 16 Synchronous DRAM (SDRAM) 文件：791.08 Kbytes Page：75 Pages | ETRON 钰创科技 | | ||
1Mega x 16 Synchronous DRAM (SDRAM) 文件：791.08 Kbytes Page：75 Pages | ETRON 钰创科技 | | ||
1Mega x 16 Synchronous DRAM (SDRAM) 文件：791.08 Kbytes Page：75 Pages | ETRON 钰创科技 | | ||
1Mega x 16 Synchronous DRAM (SDRAM) 文件：791.08 Kbytes Page：75 Pages | ETRON 钰创科技 | | ||
1Mega x 16 Synchronous DRAM (SDRAM) 文件：791.08 Kbytes Page：75 Pages | ETRON 钰创科技 | | ||
1Mega x 16 Synchronous DRAM (SDRAM) 文件：791.08 Kbytes Page：75 Pages | ETRON 钰创科技 | | ||
1Mega x 16 Synchronous DRAM (SDRAM) 文件：791.08 Kbytes Page：75 Pages | ETRON 钰创科技 | | ||
1Mega x 16 Synchronous DRAM (SDRAM) 文件：791.08 Kbytes Page：75 Pages | ETRON 钰创科技 | | ||
1Mega x 16 Synchronous DRAM (SDRAM) 文件：791.08 Kbytes Page：75 Pages | ETRON 钰创科技 | | ||
1Mega x 16 Synchronous DRAM (SDRAM) 文件：791.08 Kbytes Page：75 Pages | ETRON 钰创科技 | | ||
1Mega x 16 Synchronous DRAM (SDRAM) 文件：791.08 Kbytes Page：75 Pages | ETRON 钰创科技 | | ||
1Mega x 16 Synchronous DRAM (SDRAM) 文件：791.08 Kbytes Page：75 Pages | ETRON 钰创科技 | | ||
1Mega x 16 Synchronous DRAM (SDRAM) 文件：791.08 Kbytes Page：75 Pages | ETRON 钰创科技 | | ||
1Mega x 16 Synchronous DRAM (SDRAM) 文件：791.08 Kbytes Page：75 Pages | ETRON 钰创科技 | | ||
1Mega x 16 Synchronous DRAM (SDRAM) 文件：791.08 Kbytes Page：75 Pages | ETRON 钰创科技 | | ||
1Mega x 16 Synchronous DRAM (SDRAM) 文件：791.08 Kbytes Page：75 Pages | ETRON 钰创科技 | | ||
1Mega x 16 Synchronous DRAM (SDRAM) 文件：791.08 Kbytes Page：75 Pages | ETRON 钰创科技 | | ||
1Mega x 16 Synchronous DRAM (SDRAM) 文件：791.08 Kbytes Page：75 Pages | ETRON 钰创科技 | | ||
1Mega x 16 Synchronous DRAM (SDRAM) 文件：791.08 Kbytes Page：75 Pages | ETRON 钰创科技 | | ||
1Mega x 16 Synchronous DRAM (SDRAM) 文件：791.08 Kbytes Page：75 Pages | ETRON 钰创科技 | | ||
1Mega x 16 Synchronous DRAM (SDRAM) 文件：791.08 Kbytes Page：75 Pages | ETRON 钰创科技 | | ||
1Mega x 16 Synchronous DRAM (SDRAM) 文件：791.08 Kbytes Page：75 Pages | ETRON 钰创科技 | | ||
1Mega x 16 Synchronous DRAM (SDRAM) 文件：791.08 Kbytes Page：75 Pages | ETRON 钰创科技 | | ||
1Mega x 16 Synchronous DRAM (SDRAM) 文件：791.08 Kbytes Page：75 Pages | ETRON 钰创科技 | | ||
1Mega x 16 Synchronous DRAM (SDRAM) 文件：791.08 Kbytes Page：75 Pages | ETRON 钰创科技 | | ||
1Mega x 16 Synchronous DRAM (SDRAM) 文件：791.08 Kbytes Page：75 Pages | ETRON 钰创科技 | |
EM636165产品属性
- 类型
描述
- ORG：
1Mx16
- PART NO：
EM636165TC
- GRADE：
Industrial Temp.
- Mbps/pin：
200/166/143
- PACKAGE：
50-pin TSOP2
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
ETRONTEC |
23+ |
TSSOP |
100586 |
全新原厂原装正品现货,可提供技术支持、样品免费! |
|||
ETRONTECH |
24+ |
TSOP-50 |
85200 |
一级代理/放心购买 |
|||
ETRONTECH钰创原装正品 |
26+ |
TSOP50 |
16670 |
全新原装正品,价格优势,长期供应,量大可订 |
|||
ETRONTECH |
21+ |
TSOP |
8080 |
只做原装,质量保证 |
|||
ETRON |
23+ |
TSOP8 |
21060 |
正规渠道,只有原装! |
|||
钰创 |
25+ |
TSOP-50 |
32360 |
钰创全新特价EM636165TS-6G即刻询购立享优惠#长期有货 |
|||
ETRON/钰创 |
2025+ |
TSSOP |
5000 |
原装进口价格优 请找坤融电子! |
|||
ETRON/鈺創 |
21+ |
SOP |
7000 |
正品渠道现货,终端可提供BOM表配单。 |
|||
ETRONTEC |
24+ |
TSOP-50 |
7250 |
绝对原装现货,价格低,欢迎询购! |
|||
ETRONTECH |
2021+ |
TSOP |
9000 |
原装现货,随时欢迎询价 |
EM636165芯片相关品牌
EM636165规格书下载地址
EM636165参数引脚图相关
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- EM636165TS-6G
- EM636165TS6G
- EM636165TS-6
- EM636165TS-5G
- EM636165TS-55
- EM636165TS-5
- EM636165TS-10I/10IG
- EM636165TS-10I
- EM636165TS-10
- EM636165TS/VE-55
- EM636165TS/VE-5
- EM636165TS/VE-10
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- EM636165TS/BE-5G
- EM636165TS/BE-55G
- EM636165TS/BE-10G
- EM636165_06
- EM6354YSP5B-4.6
- EM6354YSP5B-4.4
- EM6354YSP5B-2.6
- EM6354XSP5B-4.6
- EM6354XSP5B-2.9
- EM6354XSP5B-2.6
- EM6354XSP5B-1.8
- EM6354XSP5B-1.3
- EM6354XSC4B-4.6
- EM6354XSC4B-2.9
- EM6354XSC4B-2.6
- EM6354XSC4B-1.8
- EM6354XSC4B-1.3
- EM6354
- EM6353BZ2SP3B-4.6
- EM6353BZ2SP3B-3.1
- EM6353BZ2SP3B-2.9
- EM6353BYSC5B-4.4
- EM6353BYSC5B-2.9
- EM6353BY2SP3B-4.6
- EM6353
- EM6352
- EM633
- EM6325D
- EM6325C
- EM6325B
- EM6325A
- EM6325
- EM6324
- EM6323
- EM631
- EM62T
- EM62S
- EM62K
- EM62GT
- EM62GS
- EM62100
- EM621
- EM6156
EM636165数据表相关新闻
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EM2130L02QI 全新原装正品 现货
2022-8-18EM7206PRY，EM7206PRY1，EM7206PRY2
EM7206PRY，EM7206PRY1，EM7206PRY2
2020-4-6EM6325AXSP5B-1.4，EM6325CXSP5B-1.3，EM6325CXSP5B-1.3+，EM636165TS-10
EM6325AXSP5B-1.4，EM6325CXSP5B-1.3，EM6325CXSP5B-1.3+，EM636165TS-10
2020-1-14EM6K6ROHM：SOT56356000PCS原装现货
EM6K6 品牌： ROHM 封装： SOT563 数量： 56000PCS 原装现货
2019-11-11EM6325CXSP5B-2.6可立即发货
可立即发货
2019-9-24EM636165TS-6G公司原装正品现货/长期供应
瀚佳科技（深圳）有限公司 专业进口电子元器件代理商
2019-7-3
DdatasheetPDF页码索引
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