位置:首页 > IC中文资料第6833页 > EM6013S-BC
| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
EM6013S-BC | Omnidirectional Back Electret Condenser Microphone 文件:809.38 Kbytes Page:1 Pages | SOBERTON | ||
Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. POWER MOS 7® FREDFET Power MOS 7® is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching losses are addressed with Power MOS 7® by significantly lowering RDS(ON) and Qg. Power MOS 7® combines lower conduction and switching losses alo | ADPOW | |||
Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. POWER MOS 7® MOSFET Power MOS 7® is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching losses are addressed with Power MOS 7® by significantly lowering RDS(ON) and Qg. Power MOS 7® combines lower conduction and switching losses alon | ADPOW | |||
Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. POWER MOS V® Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V® also achieves faster switching speeds through optimized gate layout. • Fast | ADPOW | |||
Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. POWER MOS 7™ Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching losses are addressed with Power MOS 7TMby significantly lowering RDS(ON) and Qg. Power MOS 7TM combines lower conduction and switching losses along wit | ADPOW | |||
Silicon Industrial Rectifier 20 Amp Description: The NTE6013 is a 20 Ampere (RMS) silicon rectifier in an electrically isolated TO220 type package with a voltage rating of 600V for use in common anode or common cathode circuits. This device features a glass–passivated junction to ensure long term reliability and stability. In add | NTE |
EM6013S-BC产品属性
- 类型
描述
- 型号
EM6013S-BC
- 制造商
SOBERTON
- 制造商全称
SOBERTON
- 功能描述
Omnidirectional Back Electret Condenser Microphone
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
EMLSI |
22+ |
SOP |
20000 |
公司只有原装 品质保证 |
|||
N/A |
24+ |
NA |
990000 |
明嘉莱只做原装正品现货 |
|||
EMLSI |
25+ |
TSOP32 |
9800 |
全新原装现货,假一赔十 |
|||
EMC |
24+ |
TSSOP-32 |
926 |
||||
Horn Industrial Co Ltd |
25+ |
239 |
公司优势库存 热卖中! |
||||
EM |
2450+ |
8850 |
只做原装正品假一赔十为客户做到零风险!! |
||||
EMLSI |
0631+ |
SOP |
422 |
全新 发货1-2天 |
|||
Z |
NA |
8553 |
一级代理 原装正品假一罚十价格优势长期供货 |
||||
SOBERTON |
23+ |
麦克风 |
8000 |
原装正品,假一罚十 |
|||
EM |
23+ |
6500 |
专注配单,只做原装进口现货 |
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EM6013S-BC规格书下载地址
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DdatasheetPDF页码索引
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