| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
GaAs MES FET C to Ku BAND LOW NOISE AMPLIFIER N-CHANNEL GaAs MES FET FEATURES • Low noise figure NF = 1.6 dB TYP. at f = 12 GHz • High associated gain Ga = 9.0 dB TYP. at f = 12 GHz • Gate length: Lg = 0.3 Pm • Gate width: Wg = 280 Pm | RENESAS 瑞萨 |   | ||
Hardened Managed 16-port 10/100BASE PoE with 2-port Gigabit combo Ethernet Switch 文件：594.25 Kbytes Page：6 Pages | AXIOMTEK 艾讯科技 | | ||
LOW NOISE L TO Ku BAND GaAs MESFET 文件：52.25 Kbytes Page：6 Pages | NEC 瑞萨 | | ||
LOW NOISE L TO Ku BAND GaAs MESFET 文件：52.25 Kbytes Page：6 Pages | NEC 瑞萨 | | ||
TELECOM MAGNETICS SM76000 文件：67.92 Kbytes Page：1 Pages | DATATRONICS | |
ELX76000BC芯片相关品牌
ELX76000BC规格书下载地址
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ELX76000BC数据表相关新闻
ELVH-MF12D-HRRJ-C-N3A4
优势渠道
2023-12-27ELW2601
ELW2601
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2020-4-6EM6325AXSP5B-1.4，EM6325CXSP5B-1.3，EM6325CXSP5B-1.3+，EM636165TS-10
EM6325AXSP5B-1.4，EM6325CXSP5B-1.3，EM6325CXSP5B-1.3+，EM636165TS-10
2020-1-14
DdatasheetPDF页码索引
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