Triple Debounce Circuit

Description The ELM410 provides all of the necessary circuitry to connect as many as three independent mechanical contacts to an electronic circuit. Features • Low power CMOS design - typically 1mA at 5V • Wide supply range - 3.0 to 5.5 volt operation • Simultaneous monitoring of three c

Triple Debounce Circuit

The ELM410 provides all of the necessary circuitry to connect as many as three independent mechanical contacts to an electronic circuit.\n\n All mechanical contacts, whether from switches, relays, etc. will have inherent ‘bounce’ when they make or break a connection. Depending on the type of swit ·Low power CMOS design – typically 1mA at 5V\n·Wide supply range – 3.0 to 5.5 volt operation\n·Simultaneous monitoring of three circuits\n·Full 25msec debounce period on contact closure and opening, without external components\n·Internal pullup resistors for contact monitoring\n·High current drive o;

Triple Debounce Circuit

Description The ELM410 provides all of the necessary circuitry to connect as many as three independent mechanical contacts to an electronic circuit. Features • Low power CMOS design - typically 1mA at 5V • Wide supply range - 3.0 to 5.5 volt operation • Simultaneous monitoring of three c

Triple Debounce Circuit

Description The ELM410 provides all of the necessary circuitry to connect as many as three independent mechanical contacts to an electronic circuit. Features • Low power CMOS design - typically 1mA at 5V • Wide supply range - 3.0 to 5.5 volt operation • Simultaneous monitoring of three c

Triple Debounce Circuit

N-channel silicon field-effect transistors

DESCRIPTION Asymmetrical N-channel planar epitaxial junction field-effect transistors in a plastic TO-92 variant; intended for applications up to the VHF range. These FETs can be supplied in four IDSS groups. Special features are the low feedback capacitance and the low noise figure. Thanks

N-channel silicon field-effect transistors

DESCRIPTION Asymmetrical N-channel planar epitaxial junction field-effect transistors in a plastic TO-92 variant; intended for applications up to the VHF range. These FETs can be supplied in four IDSS groups. Special features are the low feedback capacitance and the low noise figure. Thanks

5 AMPERE POWER TRANSISTOR NPN SILICON

High Voltage NPN Silicon Transistors . . . designed for medium to high voltage inverters, converters, regulators and switching circuits. • High Collector–Emitter Voltage — VCEO = 200 Volts • DC Current Gain Specified @ 1.0 and 2.5 Adc • Low Collector–Emitter Saturation Voltage — VCE(sat) = 0.8

POWER RECTIFIERS(4.0A,500-1000V)

Fast Settling, Video Op Amp with Disable

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